摘要:
Providing for single and multi-bit error correction of electronic memory is described herein. As an example, error correction can be accomplished by establishing a suspect region between bit level distributions of a set of analyzed memory cells. The suspect region can define potential error bits for the distributions. If a bit error is detected for the distributions, error correction can first be applied to the potential error bits in the suspect region. By identifying suspected error bits and limiting initial error correction to such identified bits, complexities involved in applying error correction to all bits of the distributions can be mitigated or avoided, improving efficiency of bit error corrections for electronic memory.
摘要:
A device, system and method in which data in a write cache, that must at some point be written to non-volatile memory, is written to non-volatile memory after expiration of a threshold time period during which no new host commands are received. If either the last dirty entry is written back or a host command is received during the write-back process, the time threshold time period and auto-flush process is restarted.
摘要:
A channel estimator, configured for supplying equalization coefficients to a frequency equalizer, is configured for determining equalizer coefficients for a received wireless signal based on a minimum equalization error-based estimation. The channel estimator is configured for identifying first and second long preambles from the received wireless signal, determining an equalization coefficient for a selected frequency based on a minimized cost function for the first and second long preambles relative to a prescribed preamble value for the selected frequency, and supplying the equalization coefficient for the selected frequency to a frequency equalizer for equalization of the received wireless signal.
摘要:
A superconducting article and a method of making a superconducting article is described. The method of forming a superconducting article includes providing a substrate, forming a buffer layer to overlie the substrate, the buffer layer including a first buffer film deposited in the presence of an ion beam assist source and having a uniaxial crystal texture. The method further includes forming a superconducting layer to overlie the buffer layer.
摘要:
A device, system and method in which data in a write cache, that must at some point be written to non-volatile memory, is written to non-volatile memory after expiration of a threshold time period during which no new host commands are received. If either the last dirty entry is written back or a host command is received during the write-back process, the time threshold time period and auto-flush process is restarted.
摘要:
Systems and/or methods that provide for the accuracy of address translations in a memory system that decouples the system address from the physical address. Address-modifying transactions are recorded in a non-volatile write buffer to couple the last-in-time translation physical address/location with the current translated physical location/address. In addition, integrity check protection may be applied to the translation and to the written data to limit the amount of data that may be lost in the event of a failure/error occurring during the write operation. Transaction recording and integrity check protection allows for recovery of write operations that may not have fully completed due to the failure/error.
摘要:
Systems and/or methods that provide for the accuracy of address translations in a memory system that decouples the system address from the physical address. Address-modifying transactions are recorded in a non-volatile write buffer to couple the last-in-time translation physical address/location with the current translated physical location/address. In addition, integrity check protection may be applied to the translation and to the written data to limit the amount of data that may be lost in the event of a failure/error occurring during the write operation. Transaction recording and integrity check protection allows for recovery of write operations that may not have fully completed due to the failure/error.
摘要:
Providing for single and multi-bit error correction of electronic memory is described herein. As an example, error correction can be accomplished by establishing a suspect region between bit level distributions of a set of analyzed memory cells. The suspect region can define potential error bits for the distributions. If a bit error is detected for the distributions, error correction can first be applied to the potential error bits in the suspect region. By identifying suspected error bits and limiting initial error correction to such identified bits, complexities involved in applying error correction to all bits of the distributions can be mitigated or avoided, improving efficiency of bit error corrections for electronic memory.
摘要:
A channel tracking module, configured for generating updated equalization coefficients for a frequency equalizer, is configured for determining a digital-based error value between equalized signals output by the frequency equalizer relative to predicted signals, for each subcarrier frequency of an OFDM symbol. The channel tracking module determines an accumulated error based on accumulating the digital-based error values for all the subcarrier frequencies of the OFDM symbol, for a prescribed successive number of OFDM symbols. The channel tracking module also determines a step size based on the accumulated error and relative to a prescribed step function configured for optimizing equalizer adjustments within stability limits. The channel tracking updates the equalization coefficients for each subscarrier frequency based on the accumulated error and the step size. Hence, the channel tracking module can be implemented in an economical manner while ensuring optimum equalizer adjustments within stability limits that ensure convergence of the equalization coefficients.
摘要:
A superconducting article is provided that includes a substrate, an anti-epitaxial film over the substrate, a buffer film having biaxial crystal texture over the anti-epitaxial film, and a superconductor layer over the second buffer film. Also provided is a superconducting article as a tape, in a power cable, and a power transformer.