公开(公告)号：US20130320494A1

公开(公告)日：2013-12-05

申请号：US13721089

申请日：2012-12-20

Applicant: QUALCOMM INCORPORATED

Inventor： John J. Zhu ,  PR Chidambaram ,  Lixin Ge ,  Bin Yang ,  Jihong Choi

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L23/5223 ,  H01L27/0207 ,  H01L28/86 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor die having a plurality of metal layers, including a set of metal layers having a preferred direction for minimum feature size. The set of metal layers are such that adjacent metal layers have preferred directions orthogonal to one another. Finger capacitors formed in the set of metal layers are such that a finger capacitor formed in one metal layer has a finger direction parallel to the preferred direction of that metal layer. In bidirectional metal layers, capacitor fingers may be in either direction.

Abstract translation: 一种具有多个金属层的半导体管芯，包括一组具有最小特征尺寸的优选方向的金属层。 金属层的组合使得相邻的金属层具有彼此正交的优选方向。 形成在金属层组中的手指电容器使得形成在一个金属层中的手指电容器具有平行于该金属层的优选方向的手指方向。 在双向金属层中，电容指可以在任一方向上。

公开(公告)号：US09818817B2

公开(公告)日：2017-11-14

申请号：US13764811

申请日：2013-02-12

Applicant: QUALCOMM Incorporated

Inventor： John J. Zhu ,  P R Chidambaram ,  Giridhar Nallapati ,  Choh fei Yeap

IPC: H01L49/02 ,  H01L23/522

CPC classification number: H01L28/40 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of fabricating a metal-insulator-metal (MIM) capacitor reduces the number of masks and processing steps compared to conventional techniques. A conductive redistribution layer (RDL) is patterned on a semiconductor chip. A MIM dielectric layer is deposited over the RDL. A first conductive layer of a MIM capacitor is deposited over the MIM dielectric layer. The MIM dielectric layer is patterned using a MIM conductive layer mask. The conductive redistribution layer includes two RDL nodes that extend under the first conductive layer of the MIM capacitor. A conductive via or bump extends through the MIM dielectric layer and couples one of the RDL nodes to the first conductive layer of the MIM capacitor.

公开(公告)号：US09269492B2

公开(公告)日：2016-02-23

申请号：US13799079

申请日：2013-03-13

Applicant: QUALCOMM Incorporated

Inventor： John J. Zhu ,  Pr Chidambaram ,  Lixin Ge ,  Bin Yang ,  Jihong Choi

IPC: H01G4/012 ,  H01G4/38 ,  H01G4/005 ,  H01L49/02 ,  H01G4/33 ,  H01G4/10

CPC classification number: H01G4/012 ,  H01G4/005 ,  H01G4/10 ,  H01G4/33 ,  H01G4/38 ,  H01L28/86

Abstract: An orthogonal finger capacitor includes a layer having an anode bone frame adjacent a cathode bone frame, the anode bone frame having a first portion extending along an axis and a second portion extending perpendicular to the axis. A set of anode fingers extends from the first portion. A set of cathode fingers extends from the cathode bone frame, interdigitated with the set of anode fingers. An overlaying layer has another anode bone frame having a first portion parallel to the axis and a perpendicular second portion. A via couples the overlaying anode bone frame to the underlying anode bone frame. The via is located where the first portion of the overlaying anode bone frame overlaps the second portion of the underlying anode bone frame or, optionally, where the second portion of the overlying anode bone frame overlaps the first portion of the underlying anode bone frame.

Abstract translation: 正交手指电容器包括具有邻近阴极骨架的阳极骨架的层，阳极骨架具有沿轴线延伸的第一部分和垂直于轴线延伸的第二部分。 一组阳极指从第一部分延伸。 一组阴极指状物从阴极骨框架延伸，与一组阳极指状物交叉。 覆盖层具有另一阳极骨架，其具有平行于轴线的第一部分和垂直的第二部分。 A通孔将覆盖的阳极骨框架耦合到下面的阳极骨框架。 通孔位于覆盖阳极骨框架的第一部分与下面的阳极骨框架的第二部分重叠的位置，或者可选地，其中上覆的阳极骨架的第二部分与下面的阳极骨架的第一部分重叠。

公开(公告)号：US09263279B2

公开(公告)日：2016-02-16

申请号：US13864344

申请日：2013-04-17

Applicant: QUALCOMM Incorporated

Inventor： John J. Zhu ,  Zhongze Wang ,  Da Yang

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/469 ,  H01L21/283 ,  H01L21/768 ,  H01L23/50 ,  G03F7/20 ,  H01L23/00

CPC classification number: H01L21/76894 ,  G03F7/7045 ,  G03F7/70466 ,  H01L21/28123 ,  H01L21/283 ,  H01L21/31 ,  H01L21/469 ,  H01L21/76892 ,  H01L21/76895 ,  H01L23/50 ,  H01L24/27 ,  H01L24/31 ,  H01L2924/0002 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.

Abstract translation: 特征是在半导体芯片上制造的。 这些特征小于用于制造芯片的光刻的阈值。 一种方法包括图案化特征（例如局部互连）的第一部分和要被分离预定距离的特征的第二部分，例如线尖到尖端空间或线空间。 该方法还包括用切割掩模图案化第一部分以形成第一子部分（例如，接触）和第二子部分。 第一子部分的尺寸小于第二预定距离的尺寸，其可以是具有指定宽度分辨率的光刻工艺的线长分辨率。 半导体器件的特征包括具有小于第一部分的光刻分辨率的尺寸的第一部分和第二部分。

公开(公告)号：US20140264629A1

公开(公告)日：2014-09-18

申请号：US13829864

申请日：2013-03-14

Applicant: QUALCOMM INCORPORATED

Inventor： John J. Zhu ,  Giridhar Nallapati ,  Chidi Chidambaram

IPC: H01L23/528 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/76841 ,  H01L21/76895 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/0207 ,  H01L27/088 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A local interconnect structure is provided that includes a gate-directed local interconnect coupled to an adjacent gate layer through a diffusion-directed local interconnect.

Abstract translation: 提供局部互连结构，其包括通过扩散导向的局部互连耦合到相邻栅极层的栅极定向局部互连。

公开(公告)号：US20140231957A1

公开(公告)日：2014-08-21

申请号：US13770127

申请日：2013-02-19

Applicant: QUALCOMM INCORPORATED

Inventor： John J. Zhu ,  Bin Yang ,  PR Chidambaram ,  Lixin Ge ,  Jihong Choi

IPC: H01L23/538 ,  H01L27/08

CPC classification number: H01L23/538 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect layer of the interconnect stack. The CBC structure may also include a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes at least one metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure may also include a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having at least a portion of the first upper interconnect layer, and a second capacitor plate having at least a portion of the MIM capacitor layer(s).

Abstract translation: 互补的后端（BEOL）电容器（CBC）结构包括金属氧化物金属（MOM）电容器结构。 MOM电容器结构耦合到集成电路（IC）器件的互连堆叠的第一上互连层。 MOM电容器结构包括互连叠层的至少一个下互连层。 CBC结构还可以包括耦合到MOM电容器结构的互连叠层的第二上互连层。 CBC结构还包括在第一上互连层和第二上互连层之间的至少一个金属绝缘体金属（MIM）电容器层。 此外，CBC结构还可以包括耦合到MOM电容器结构的MIM电容器结构。 MIM电容器结构包括具有第一上互连层的至少一部分的第一电容器板和具有MIM电容层的至少一部分的第二电容器板。

公开(公告)号：US20140092523A1

公开(公告)日：2014-04-03

申请号：US13799079

申请日：2013-03-13

Applicant: QUALCOMM INCORPORATED

Inventor： John J. Zhu ,  PR Chidambaram ,  Lixin Ge ,  Bin Yang ,  Jihong Choi

IPC: H01G4/012 ,  H01G4/005 ,  H01G4/38

CPC classification number: H01G4/012 ,  H01G4/005 ,  H01G4/10 ,  H01G4/33 ,  H01G4/38 ,  H01L28/86

Abstract: An orthogonal finger capacitor includes a layer having an anode bone frame adjacent a cathode bone frame, the anode bone frame having a first portion extending along an axis and a second portion extending perpendicular to the axis. A set of anode fingers extends from the first portion. A set of cathode fingers extends from the cathode bone frame, interdigitated with the set of anode fingers. An overlaying layer has another anode bone frame having a first portion parallel to the axis and a perpendicular second portion. A via couples the overlaying anode bone frame to the underlying anode bone frame. The via is located where the first portion of the overlaying anode bone frame overlaps the second portion of the underlying anode bone frame or, optionally, where the second portion of the overlying anode bone frame overlaps the first portion of the underlying anode bone frame.

Abstract translation: 正交手指电容器包括具有邻近阴极骨架的阳极骨架的层，阳极骨架具有沿轴线延伸的第一部分和垂直于轴线延伸的第二部分。 一组阳极指从第一部分延伸。 一组阴极指状物从阴极骨框架延伸，与一组阳极指状物交叉。 覆盖层具有另一阳极骨架，其具有平行于轴线的第一部分和垂直的第二部分。 A通孔将覆盖的阳极骨框架耦合到下面的阳极骨框架。 通孔位于覆盖阳极骨框架的第一部分与下面的阳极骨框架的第二部分重叠的位置，或者可选地，其中上覆的阳极骨架的第二部分与下面的阳极骨架的第一部分重叠。