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    Coolant Distribution Structure For Monolithic Microwave Integrated Circuits (MMICs)
    12.
    发明申请
    Coolant Distribution Structure For Monolithic Microwave Integrated Circuits (MMICs) 有权
    单片微波集成电路（MMIC）的冷却液分配结构

    公开(公告)号：US20160365300A1

    公开(公告)日：2016-12-15

    申请号：US14734372

    申请日：2015-06-09

    Applicant: Raytheon Company

    Inventor： Anurag Gupta ,  David H. Altman ,  Jason G. Milne ,  Christopher R. Koontz

    IPC: H01L23/473 ,  H01L23/373 ,  H01L23/367 ,  H01L23/66

    CPC classification number: H01L23/473 ,  H01L23/367 ,  H01L23/3732 ,  H01L23/66 ,  H01L2223/6683

    Abstract: A coolant distribution structure for an MMIC having: an input/output layer with an input port for receiving a coolant for transmission to coolant channels in the MMIC and an output port for exiting the coolant after such coolant has cooled active devices in the MMIC, a coolant pass-through layer to receive the coolant from the input port and having structure to inhibit such received coolant from passing directly to the output port, a coolant distribution layer for receiving coolant passing from the coolant pass-through layer and distributing such received coolant to the cooling channels to absorb heat generated by the active devices and then directing heated coolant to the coolant distribution layer and out of the porting layer via the passthrough layer. The coolant pass-through layer has a structure configured to inhibit such heated coolant from passing directly to the input port prior to such heated absorbed coolant being transmitted to the output port.

    Abstract translation: 用于MMIC的冷却剂分配结构具有：输入/输出层，其具有用于接收用于传输到MMIC中的冷却剂通道的冷却剂的输入端口和用于在这种冷却剂已经冷却了MMIC中的有源器件之后离开冷却剂的输出端口， 冷却剂通过层，以从输入端口接收冷却剂，并且具有阻止这种接收的冷却剂直接通过到输出端口的结构，冷却剂分配层，用于接收从冷却剂通过层通过的冷却剂并将这种接收到的冷却剂分配到 冷却通道以吸收由有源装置产生的热量，然后经由透气层将加热的冷却剂引导至冷却剂分配层并离开移动层。 冷却剂通过层具有被配置为在被加热的吸收的冷却剂被传输到输出端口之前禁止这种加热的冷却剂直接通到输入端口的结构。

    Coolant distribution structure for monolithic microwave integrated circuits (MMICs)
    13.
    发明授权
    Coolant distribution structure for monolithic microwave integrated circuits (MMICs) 有权
    单片微波集成电路（MMIC）的冷却液分配结构

    公开(公告)号：US09502330B1

    公开(公告)日：2016-11-22

    申请号：US14734372

    申请日：2015-06-09

    Applicant: Raytheon Company

    Inventor： Anurag Gupta ,  David H. Altman ,  Jason G. Milne ,  Christopher R. Koontz

    IPC: H01L23/473 ,  H01L23/66 ,  H01L23/373 ,  H01L23/367

    CPC classification number: H01L23/473 ,  H01L23/367 ,  H01L23/3732 ,  H01L23/66 ,  H01L2223/6683

    Abstract: A coolant distribution structure for an MMIC having: an input/output layer with an input port for receiving a coolant for transmission to coolant channels in the MMIC and an output port for exiting the coolant after such coolant has cooled active devices in the MMIC, a coolant pass-through layer to receive the coolant from the input port and having structure to inhibit such received coolant from passing directly to the output port, a coolant distribution layer for receiving coolant passing from the coolant pass-through layer and distributing such received coolant to the cooling channels to absorb heat generated by the active devices and then directing heated coolant to the coolant distribution layer and out of the porting layer via the pass-through layer. The coolant pass-through layer has a structure configured to inhibit such heated coolant from passing directly to the input port prior to such heated absorbed coolant being transmitted to the output port.

    Abstract translation: 用于MMIC的冷却剂分配结构具有：输入/输出层，其具有用于接收用于传输到MMIC中的冷却剂通道的冷却剂的输入端口和用于在这种冷却剂已经冷却了MMIC中的有源器件之后离开冷却剂的输出端口， 冷却剂通过层，以从输入端口接收冷却剂，并且具有阻止这种接收的冷却剂直接通过到输出端口的结构，冷却剂分配层，用于接收从冷却剂通过层通过的冷却剂并将这种接收到的冷却剂分配到 冷却通道以吸收由有源装置产生的热量，然后经由穿通层将加热的冷却剂引导至冷却剂分配层并移出端口层。 冷却剂通过层具有被配置为在被加热的吸收的冷却剂被传输到输出端口之前禁止这种加热的冷却剂直接通到输入端口的结构。

    Method for creating a selective solder seal interface for an integrated circuit cooling system
    14.
    发明授权
    Method for creating a selective solder seal interface for an integrated circuit cooling system 有权
    用于为集成电路冷却系统创建选择性焊接密封接口的方法

    公开(公告)号：US08987892B2

    公开(公告)日：2015-03-24

    申请号：US13891490

    申请日：2013-05-10

    Applicant: Raytheon Company

    Inventor： William J. Davis ,  David H. Altman

    IPC: H01L23/46 ,  B23P15/26 ,  H01L23/373 ,  H01L23/473 ,  H01L21/48 ,  H05K1/02

    CPC classification number: B23P15/26 ,  B23K1/0016 ,  B23K2101/40 ,  H01L21/4882 ,  H01L23/3735 ,  H01L23/473 ,  H01L2924/0002 ,  H05K1/0272 ,  H05K2201/064 ,  Y10T29/49393 ,  H01L2924/00

    Abstract: A method for forming cooling channels in an interface for soldering to a semiconductor structure. The method includes: forming a metal seed layer on a surface of a substrate; patterning the metal seed layer into a patterned, plating seed layer covering portions of the substrate and exposing other portions of the substrate; using the patterned plating seed layer to form channels through the exposed portions of the substrate; and plating the patterned plating seed layer with solder. A heat exchanger having cooling channels therein is affixed to one surface of the interface and the semiconductor structure is soldered to an opposite surface of the interface. The cooling channels of the heat exchanger are aligned with the channels in the interface.

    Abstract translation: 一种用于在用于焊接到半导体结构的界面中形成冷却通道的方法。 该方法包括：在基板的表面上形成金属种子层; 将金属种子层图案化成图案化的电镀种子层，覆盖衬底的部分并暴露衬底的其它部分; 使用图案化的电镀种子层通过衬底的暴露部分形成沟道; 并用焊料电镀图案化的电镀种子层。 其中具有冷却通道的热交换器被固定到界面的一个表面上，并且半导体结构被焊接到界面的相对表面。 热交换器的冷却通道与界面中的通道对齐。

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