摘要:
The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at its closed end portion a protrusion 15 projecting toward the processing chamber 2.
摘要:
A nitrogen-rich two-phase stainless steel that has corrosion resistance equal to that of standard type of two-phase stainless steel and is not susceptible to corrosion in a welding heat-affected part, wherein the austenite phase area ratio is 40-70%, the PI value expressed by formula (1) is 30-38, the NI value expressed by formula (2) is 100-140, and the γpre expressed by formula (3) is 1350-1450. (1) PI=Cr+3.3Mo+16N (2) NI=(Cr+Mo)/N.
摘要:
A stainless steel exhibiting excellent anticorrosion property for use in engine exhaust systems comprises not more than 0.010% C, not more than 0.2% Si, 0.05%-1.5% Mn, 12%-20% Cr, 0.2%-3.0% Mo, 0.005%-0.1% Al, not more than 0.015% N, not more than 0.025% P, not more than 0.010% S, either or both of 10.times.(C %+N %)-0.5% Ti and 5.times.(C %+N %) 0.5% Nb, and the balance of Fe and unavoidable impurities. An additional improvement in the anticorrosion property of the stainless steel can be obtained by further adding thereto one or more of 0.1%-1.0% Ni, 0.03%-1.0% Cu, 0.05%-0.5% W, 0.05%-0.5% V and 0.05%-1.0% Zr and/or one or both of 0.001%-0.03% Ca and 0.001%-0.03% Ce.
摘要:
The present invention provides a lean duplex stainless steel able to suppress the drop in corrosion resistance and toughness of a weld heat affected zone comprising, by mass %, C: 0.06% or less, Si: 0.1 to 1.5%, Mn: 2.0 to 4.0%, P: 0.05% or less, S: 0.005% or less, Cr: 19.0 to 23.0%, Ni: 1.0 to 4.0%, Mo: 1.0% or less, Cu: 0.1 to 3.0%, V: 0.05 to 0.5%, Al: 0.003 to 0.050%, O: 0.007% or less, N: 0.10 to 0.25%, and Ti: 0.05% or less, having a balance of Fe and unavoidable impurities. An Md30 value is 80 or less, an Ni-bal is −7.1 to 4, an austenite phase area percentage is 40 to 70%, and a 2×Ni+Cu is 3.5 or more: Md30=551−462×(C+N)−9.2×Si−8.1×Mn−29×(Ni+Cu)−13.7×Cr−18.5×Mo−68×Nb; Ni-bal=(Ni+0.5Mn+0.5Cu+30C+30N)−1.1(Cr+1.5Si+Mo+W)+8.2 and N(%)≦0.37+0.03×(Ni-bal).
摘要:
A welding wire for austenitic stainless steel welding contains, in percent by mass, C: 0.005 through 0.05%, Si: 0.1 through 1.0%, Mn: 1.0 through 3.5%, Cr: 25.0 through 28.0%, Ni: 16.0 through 23.9%, Mo: 1.6 through 3.0%, Cu: 0.1 through 0.5%, Al: 0.001 through 0.02%, and N: more than 0.30 through 0.50%, limiting O to 0.03% or less, P to 0.03% or less, and S to 0.005% or less, and having a ratio of a Cr equivalent to Ni equivalent (Cr equivalent/Ni equivalent) within a range between 0.85 and 1.2 and a PI value of 35 or more, the remainder being iron and unavoidable impurities.
摘要:
A method for dividing a semiconductor wafer along a plurality of streets, the semiconductor wafer having a face on which a plurality of rectangular regions are defined by the streets arranged in a lattice pattern, and a semiconductor device is formed in each of the rectangular regions. This method comprises a protective member coating step of coating the face of the semiconductor wafer with a protective member, a resist film coating step of coating the back of the semiconductor wafer, except sites corresponding to the streets, with a resist film, and a plasma etching step of applying plasma etching to the back of the semiconductor wafer to divide the semiconductor wafer along the streets.
摘要:
A nitrogen-rich two-phase stainless steel that has corrosion resistance equal to that of standard type of two-phase stainless steel and is not susceptible to corrosion in a welding heat-affected part, wherein the austenite phase area ratio is 40-70%, the PI value expressed by formula (1) is 30-38, the NI value expressed by formula (2) is 100-140, and the γpre expressed by formula (3) is 1350-1450. (1) PI=Cr+3.3Mo+16N (2) NI=(Cr+Mo)/N
摘要:
The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthen the replacement cycle of the discharge vessel.A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at is closed end portion a protrusion 15 projecting toward the processing chamber 2.
摘要:
The present invention provides a lean duplex stainless steel able to suppress the drop in corrosion resistance and toughness of a weld heat affected zone and is characterized by containing, by mass %, C: 0.06% or less, Si: 0.1 to 1.5%, Mn: 2.0 to 4.0%, P: 0.05% or less, S: 0.005% or less, Cr: 19.0 to 23.0%, Ni: 1.0 to 4.0%, Mo: 1.0% or less, Cu: 0.1 to 3.0%, V: 0.05 to 0.5%, Al: 0.003 to 0.050%, 0: 0.007% or less, N: 0.10 to 0.25%, and Ti: 0.05% or less, having a balance of Fe and unavoidable impurities, having an Md30 value expressed by formula (1) of 80 or less, having an Ni-bal expressed by formula (2) of −8 to −4, having a relationship between the Ni-bal and the N content satisfying formula (3), having an austenite phase area percentage of 40 to 70%, and having a 2×Ni+Cu of 3.5 or more: Md30=551−462×(C+N)−9.2×Si−8.1×Mn−29×(Ni+Cu)−13.7×Cr−18.5×Mo−68×Nb (1) Ni-bal=(Ni+0.5Mn+0.5Cu+30C+30N)−1.1(Cr+1.5Si+Mo+W)+8.2 (2) N(%)≦0.37+0.03×(Ni-bal) (3)