Plasma processing apparatus and device manufacturing method

    公开(公告)号:US10685815B2

    公开(公告)日:2020-06-16

    申请号:US13392126

    申请日:2010-08-25

    IPC分类号: H01J37/32

    摘要: The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at its closed end portion a protrusion 15 projecting toward the processing chamber 2.

    Austenitic stainless steel welding wire and welding structure
    15.
    发明授权
    Austenitic stainless steel welding wire and welding structure 有权
    奥氏体不锈钢焊丝和焊接结构

    公开(公告)号:US08710405B2

    公开(公告)日:2014-04-29

    申请号:US11404413

    申请日:2006-04-13

    IPC分类号: B23K35/34 B23K35/22

    CPC分类号: B23K35/26

    摘要: A welding wire for austenitic stainless steel welding contains, in percent by mass, C: 0.005 through 0.05%, Si: 0.1 through 1.0%, Mn: 1.0 through 3.5%, Cr: 25.0 through 28.0%, Ni: 16.0 through 23.9%, Mo: 1.6 through 3.0%, Cu: 0.1 through 0.5%, Al: 0.001 through 0.02%, and N: more than 0.30 through 0.50%, limiting O to 0.03% or less, P to 0.03% or less, and S to 0.005% or less, and having a ratio of a Cr equivalent to Ni equivalent (Cr equivalent/Ni equivalent) within a range between 0.85 and 1.2 and a PI value of 35 or more, the remainder being iron and unavoidable impurities.

    摘要翻译: 奥氏体不锈钢焊接用焊丝以质量%计含有C:0.005〜0.05%,Si:0.1〜1.0%,Mn:1.0〜3.5%,Cr:25.0〜28.0%,Ni:16.0〜23.9% Mo:1.6〜3.0%,Cu:0.1〜0.5%,Al:0.001〜0.02%,N:大于0.30〜0.50%,将O限制在0.03%以下,P:0.03%以下,S:0.005以下 %以下,Cr相当于Ni当量(Cr当量/ Ni当量)在0.85〜1.2的范围内,PI值为35以上,剩余部分为铁和不可避免的杂质。

    Method for dividing semiconductor wafer along streets
    16.
    发明申请
    Method for dividing semiconductor wafer along streets 审中-公开
    半导体晶片沿街道划分的方法

    公开(公告)号:US20060073705A1

    公开(公告)日:2006-04-06

    申请号:US11237690

    申请日:2005-09-29

    IPC分类号: H01L21/461

    CPC分类号: H01L21/78 H01L21/3065

    摘要: A method for dividing a semiconductor wafer along a plurality of streets, the semiconductor wafer having a face on which a plurality of rectangular regions are defined by the streets arranged in a lattice pattern, and a semiconductor device is formed in each of the rectangular regions. This method comprises a protective member coating step of coating the face of the semiconductor wafer with a protective member, a resist film coating step of coating the back of the semiconductor wafer, except sites corresponding to the streets, with a resist film, and a plasma etching step of applying plasma etching to the back of the semiconductor wafer to divide the semiconductor wafer along the streets.

    摘要翻译: 一种用于沿着多个街道划分半导体晶片的方法,所述半导体晶片具有由以格子状布置的街道限定多个矩形区域的面,并且在每个矩形区域中形成半导体器件。 该方法包括用保护部件涂覆半导体晶片的表面的保护部件涂布工序,除了与街道对应的位置以外的半导体晶片的背面,用抗蚀剂膜和等离子体 将等离子体蚀刻施加到半导体晶片的背面以沿着街道划分半导体晶片的蚀刻步骤。

    PLASMA PROCESSING APPARATUS AND DEVICE MANUFACTURING METHOD
    18.
    发明申请
    PLASMA PROCESSING APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    等离子体加工设备和设备制造方法

    公开(公告)号:US20120145671A1

    公开(公告)日:2012-06-14

    申请号:US13392126

    申请日:2010-08-25

    IPC分类号: B44C1/22 B05C5/02

    CPC分类号: H01J37/3266 H01J37/321

    摘要: The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthen the replacement cycle of the discharge vessel.A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at is closed end portion a protrusion 15 projecting toward the processing chamber 2.

    摘要翻译: 本发明提供一种等离子体处理装置,其减少了在放电容器中产生的等离子体的损伤,并延长了放电容器的更换周期。 等离子体处理装置1设置有分隔处理空间的处理室2,一端朝向处理室2内侧开口而另一端封闭的放电室3,设置在放电容器3周围的天线4和 产生感应电场,在减压下在放电容器3内产生等离子体;以及电磁体9,其布置在放电容器3的周围,并在放电容器3内形成发散磁场。放电容器3具有闭合端 将朝向处理室2突出的突起部分15分开。

    LEAN DUPLEX STAINLESS STEEL EXCELLENT IN CORROSION RESISTANCE AND TOUGHNESS OF WELD HEAT AFFECTED ZONE
    19.
    发明申请
    LEAN DUPLEX STAINLESS STEEL EXCELLENT IN CORROSION RESISTANCE AND TOUGHNESS OF WELD HEAT AFFECTED ZONE 有权
    不锈钢不锈钢耐腐蚀性和焊接热影响区韧性好

    公开(公告)号:US20110097234A1

    公开(公告)日:2011-04-28

    申请号:US12736255

    申请日:2009-03-26

    摘要: The present invention provides a lean duplex stainless steel able to suppress the drop in corrosion resistance and toughness of a weld heat affected zone and is characterized by containing, by mass %, C: 0.06% or less, Si: 0.1 to 1.5%, Mn: 2.0 to 4.0%, P: 0.05% or less, S: 0.005% or less, Cr: 19.0 to 23.0%, Ni: 1.0 to 4.0%, Mo: 1.0% or less, Cu: 0.1 to 3.0%, V: 0.05 to 0.5%, Al: 0.003 to 0.050%, 0: 0.007% or less, N: 0.10 to 0.25%, and Ti: 0.05% or less, having a balance of Fe and unavoidable impurities, having an Md30 value expressed by formula (1) of 80 or less, having an Ni-bal expressed by formula (2) of −8 to −4, having a relationship between the Ni-bal and the N content satisfying formula (3), having an austenite phase area percentage of 40 to 70%, and having a 2×Ni+Cu of 3.5 or more: Md30=551−462×(C+N)−9.2×Si−8.1×Mn−29×(Ni+Cu)−13.7×Cr−18.5×Mo−68×Nb   (1) Ni-bal=(Ni+0.5Mn+0.5Cu+30C+30N)−1.1(Cr+1.5Si+Mo+W)+8.2   (2) N(%)≦0.37+0.03×(Ni-bal)   (3)

    摘要翻译: 本发明提供能够抑制焊接热影响区的耐腐蚀性和韧性降低的双相不锈钢,其特征在于,以质量%计含有C:0.06%以下,Si:0.1〜1.5%,Mn :2.0〜4.0%,P:0.05%以下,S:0.005%以下,Cr:19.0〜23.0%,Ni:1.0〜4.0%,Mo:1.0%以下,Cu:0.1〜3.0% 0.05〜0.5%,Al:0.003〜0.050%,0:0.007%以下,N:0.10〜0.25%,Ti:0.05%以下,余量为Fe和不可避免的杂质,Md30值为式 (1)为80以下,具有由式(2)表示的Ni-bal为-8〜-4,具有Ni-bal与满足式(3)的N含量之间的关系,具有奥氏体相面积百分比 40〜70%,2×Ni + Cu为3.5以上:Md30 = 551-462×(C + N)-9.2×Si-8.1×Mn-29×(Ni + Cu)-13.7×Cr -18.5×Mo-68×Nb(1)Ni-bal =(Ni + 0.5Mn + 0.5Cu + 30C + 30N)-1.1(Cr + 1.5Si + Mo + W)+8.2(2)N(%)& ; 0.37 + 0.03×(Ni-bal) (3)