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公开(公告)号：US20210020872A1
公开(公告)日：2021-01-21
申请号：US16837540
申请日：2020-04-01
发明人： Joon Seok PARK , Yeon Keon MOON , Myoung Hwa KIM , Tae Sang KIM , Hyung Jun KIM , Geun Chul PARK , Sang Woo SOHN , Jun Hyung LIM , Kyung Jin JEON , Hye Lim CHOI
IPC分类号： H01L51/56 , G09G3/3266 , G09G3/325 , H01L29/786 , H01L29/49 , G09G3/3291
摘要： A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.
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公开(公告)号：US20200006387A1
公开(公告)日：2020-01-02
申请号：US16453976
申请日：2019-06-26
发明人： Yeon Keon MOON , Kano MASATAKA , Myoung Hwa KIM , Jun Hyung LIM
IPC分类号： H01L27/12 , H01L29/786 , G09G3/36
摘要： A display device in which a display area and a non-display area are defined, the display device including a wiring substrate, the wiring substrate including: a base substrate; a first thin film transistor disposed on the base substrate, located in the non-display area, and including a first gate pattern, a first semiconductor pattern disposed on the first gate pattern, a first source pattern disposed on the first semiconductor pattern, and a first drain pattern disposed on the first semiconductor pattern and spaced apart from the first source pattern; and a second thin film transistor disposed on the base substrate and located in the display area. A first channel width of the first thin film transistor is greater than a first overlap length of the first gate pattern, the first semiconductor pattern, and the first drain pattern.
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公开(公告)号：US20160155753A1
公开(公告)日：2016-06-02
申请号：US14664589
申请日：2015-03-20
发明人： MASATAKA KANO , Yeon Keon MOON , Jung Hun NOH , Jun Hyung LIM , So Young KOO , Myoung Hwa KIM
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/124 , H01L27/1222 , H01L27/1225
摘要： The display device includes a substrate, a first gate line extending in a first direction on the substrate, a gate insulating layer formed on the substrate to cover the first gate line, a first semiconductor pattern formed on the gate insulating layer to overlap the first gate line, and including a first region and a second region, a first data line extending in a second direction that is crossing the first gate line on the gate insulating layer, and including a source electrode region that overlaps the first region of the first semiconductor pattern, a drain electrode spaced apart from the source electrode region and formed on the second region of the first semiconductor pattern, and a pixel electrode formed on the drain electrode and electrically connected to the drain electrode. The first semiconductor pattern is arranged in a third direction between the first direction and the second direction.
摘要翻译： 显示装置包括基板，在基板上沿第一方向延伸的第一栅极线，形成在基板上以覆盖第一栅极线的栅极绝缘层，形成在栅极绝缘层上以与第一栅极重叠的第一半导体图案 并且包括第一区域和第二区域，在与栅极绝缘层上的第一栅极线交叉的第二方向上延伸的第一数据线，并且包括与第一半导体图案的第一区域重叠的源极区域 与源电极区间隔开并形成在第一半导体图案的第二区上的漏电极，以及形成在漏电极上并电连接到漏电极的像素电极。 第一半导体图案在第一方向和第二方向之间沿第三方向排列。
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公开(公告)号：US20230299089A1
公开(公告)日：2023-09-21
申请号：US18324949
申请日：2023-05-26
发明人： Yeon Keon MOON , Tae Sang KIM , Joon Seok PARK , Myoung Hwa KIM , Hyung Jun KIM , Sang Woo SOHN , Hye Lim CHOI
IPC分类号： H01L27/12
CPC分类号： H01L27/1237 , H01L27/1255 , H01L27/1259 , H01L27/124 , H01L27/1225
摘要： A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.
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公开(公告)号：US20210111197A1
公开(公告)日：2021-04-15
申请号：US16906948
申请日：2020-06-19
发明人： Yeon Keon MOON , Tae Sang KIM , Joon Seok PARK , Myoung Hwa KIM , Hyung Jun KIM , Sang Woo SOHN , Hye Lim CHOI
IPC分类号： H01L27/12
摘要： A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.
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公开(公告)号：US20200343275A1
公开(公告)日：2020-10-29
申请号：US16818310
申请日：2020-03-13
发明人： Geun Chul PARK , Joon Seok PARK , Tae Sang KIM , Yeon Keon MOON , Jun Hyung LIM , Kyung Jin JEON
IPC分类号： H01L27/12
摘要： A display device and a method of manufacturing the same. The display device includes a pixel connected to a scan line and a data line intersecting the scan line, and a driving transistor and a switching transistor disposed in the pixel. The driving transistor includes a substrate, a first active layer disposed on the substrate, a first gate electrode disposed on the first active layer, and a second insulating film contacting the first gate electrode and the first gate electrode. The switching transistor includes a second active layer disposed on the substrate, a second gate electrode disposed on the second active layer, a first insulating film contacting the second active layer and the second gate electrode, and a second insulating film covering the first insulating film. The first insulating film and the second insulating film are made of different materials from each other.
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17.发明申请公开(公告)号：US20200098924A1
公开(公告)日：2020-03-26
申请号：US16563699
申请日：2019-09-06
发明人： Tae Sang KIM , Joon Seok PARK , Kwang Suk KIM , Yeon Keon MOON , Geunchul PARK , Jun Hyung LIM , Kyung Jin JEON
IPC分类号： H01L29/786 , H01L27/12 , H01L21/467 , H01L29/66
摘要： A transistor substrate may include: a substrate; an active pattern formed on the substrate, the active pattern including an oxide semiconductor that contains tin (Sn), and the active pattern including a source region, a drain region, and a channel region that is formed between the source region and the drain region; a source protective pattern formed on the source region; a drain protective pattern formed on the drain region; a gate electrode overlapping at least a portion of the channel region; an insulation interlayer covering the source protective pattern and the drain protective pattern; a source electrode formed on the insulation interlayer, the source electrode being in contact with the source protective pattern through a source contact hole that is formed in the insulation interlayer; and a drain electrode formed on the insulation interlayer, the drain electrode being in contact with the drain protective pattern through a drain contact hole that is formed in the insulation interlayer.
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公开(公告)号：US20170052417A1
公开(公告)日：2017-02-23
申请号：US15064378
申请日：2016-03-08
发明人： Jung Hun NOH , Masataka KANO , Yeon Keon MOON , Keun Kyu SONG , Jun Ho SONG , Hyun Sup LEE , Sang Hee JANG , Byung Seok CHOI
IPC分类号： G02F1/1362 , G02F1/1333 , G02F1/1343 , G02F1/1368
CPC分类号： G02F1/136227 , G02F1/1343 , G02F1/134363 , G02F1/136209 , G02F2001/134372 , G02F2001/13606 , G02F2001/13685
摘要： Provided is a display device.The display device includes: a substrate; a light blocking pattern disposed on the substrate; a semiconductor pattern disposed on the light blocking pattern; a gate insulating layer disposed on the semiconductor pattern; a gate wiring; an interlayer insulating layer formed on the gate wiring; a first contact hole for exposing the source area; a data wiring disposed to extend in the second direction on the interlayer insulating layer and electrically connected to the source area via the first contact hole; a first passivation layer disposed on the data wiring; a second contact hole, which is disposed between the neighboring protrusion portions of the light blocking pattern so as not to overlap the light blocking pattern, and exposes the drain area; and a pixel electrode disposed on the first passivation layer and electrically connected to the drain area through the second contact hole.
摘要翻译： 显示装置包括：基板; 设置在所述基板上的遮光图案; 设置在所述遮光图案上的半导体图案; 设置在所述半导体图案上的栅极绝缘层; 门接线; 形成在栅极布线上的层间绝缘层; 用于暴露所述源区的第一接触孔; 数据线布置成在层间绝缘层上沿第二方向延伸并且经由第一接触孔电连接到源极区; 设置在数据布线上的第一钝化层; 第二接触孔，其设置在所述遮光图案的相邻突出部之间，以便不与所述遮光图案重叠，并且露出所述漏区; 以及设置在所述第一钝化层上并通过所述第二接触孔电连接到所述漏极区的像素电极。
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19.发明申请THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME 有权薄膜晶体管基板，其制造方法和具有该薄膜晶体管的液晶显示面板公开(公告)号：US20160133754A1
公开(公告)日：2016-05-12
申请号：US14661470
申请日：2015-03-18
发明人： Yeon Keon MOON , Masataka KANO , Sung-Hoon YANG , Ji Hun LIM , So Young KOO , Myoung Hwa KIM , Jun Hyung LIM
IPC分类号： H01L29/786 , G02F1/1368 , H01L29/66
CPC分类号： H01L29/78645 , G02F1/1368 , G02F2001/13685 , H01L29/42384 , H01L29/66742 , H01L29/78642 , H01L29/78648
摘要： A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain on the first insulating layer, a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain, an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source, a second insulating layer on the drain, the source, and the active layer, and a top gate on the second insulating layer.
摘要翻译： 薄膜晶体管衬底包括衬底，衬底上的底栅，衬底上的第一绝缘层和底栅，第一绝缘层上的漏极，第一绝缘层上的源，源包括第一绝缘层 漏极的第一侧的源极和在漏极的第二侧的第二源极，在第一绝缘层上的有源层，有源层包括接触漏极和第一源极的第一有源层和与第一源极接触的第二有源层 漏极和第二源极，漏极，源极和有源层上的第二绝缘层，以及第二绝缘层上的顶栅极。
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公开(公告)号：US20210328102A1
公开(公告)日：2021-10-21
申请号：US17171451
申请日：2021-02-09
发明人： Joon Seok PARK , Myoung Hwa KIM , Tae Sang KIM , Yeon Keon MOON , Geun Chul PARK , Jun Hyung LIM , Hye Lim CHOI
摘要： A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.
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