公开(公告)号：US20140021481A1

公开(公告)日：2014-01-23

申请号：US13947517

申请日：2013-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hoon LEE ,  Young Sun KWAK

IPC: H01L29/20 ,  H01L21/02

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L23/291 ,  H01L29/207 ,  H01L29/365 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A nitride-based semiconductor device includes a buffer layer on a substrate, a nitride-based semiconductor layer on the buffer layer, at least one ion implanted layer within the nitride-based semiconductor layer, and a channel layer on the nitride-based semiconductor layer.

Abstract translation: 氮化物类半导体器件包括衬底上的缓冲层，缓冲层上的氮化物基半导体层，氮化物基半导体层内的至少一个离子注入层和氮化物基半导体层上的沟道层 。

公开(公告)号：US20130200387A1

公开(公告)日：2013-08-08

申请号：US13757933

申请日：2013-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hoon LEE ,  Ki Se KIM

IPC: H01L29/20 ,  H01L29/66

CPC classification number: H01L29/2003 ,  H01L29/0619 ,  H01L29/155 ,  H01L29/201 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A nitride based heterojunction semiconductor device includes a GaN layer on a substrate, an Al-doped GaN layer on the GaN layer, an AlGaN layer on the Al-doped GaN layer, a source electrode, a gate electrode, and a drain electrode on the AlGaN layer, a first field plate on the AlGaN layer, the first field plate being in contact with the gate electrode, and a second field plate on the AlGaN layer, the second field plate being separated from the first field plate by a distance.

Abstract translation: 氮化物基异质结半导体器件包括衬底上的GaN层，GaN层上的Al掺杂GaN层，Al掺杂GaN层上的AlGaN层，源电极，栅极电极和漏极电极 AlGaN层，AlGaN层上的第一场板，第一场板与栅电极接触，第二场板在AlGaN层上，第二场板与第一场板分离一段距离。

公开(公告)号：US20140087529A1

公开(公告)日：2014-03-27

申请号：US14036071

申请日：2013-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hoon LEE

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/0615 ,  H01L29/1058 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified.

Abstract translation: 提供电力设备。 功率器件可以包括对应于栅电极图案的部分中的二维电子气（2-DEG）层，因为在形成第一氮化物层之后在栅电极图案的下部还形成第二氮化物层 因此，能够进行常关动作。 因此，功率器件可以基于栅极的电压来调整2-DEG层的产生，并且可以降低功耗。 功率器件可以只再生对应于栅极电极图案的部分，或者可以蚀刻除了与栅电极图案对应的部分之外的部分，因此凹陷处理可以是不允许的，可以确保功率器件的再现性，并且 制造过程可以被简化。

公开(公告)号：US20130168689A1

公开(公告)日：2013-07-04

申请号：US13731981

申请日：2012-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hoon LEE

IPC: H01L29/267 ,  H01L21/02

CPC classification number: H01L29/267 ,  H01L21/0237 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/34 ,  H01L29/45 ,  H01L29/452 ,  H01L29/47 ,  H01L29/475 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66212 ,  H01L29/872

Abstract: With the formation of a SixC1-xN functional layer on a barrier layer, a nitride based semiconductor device may improve a surface roughness of the barrier layer, and may reduce a surface leakage current by, for example, inhibiting aluminum (Al) and oxygen (O) from combining with each other on the barrier layer. In addition, when compared to a structure in which a barrier layer and an electrode directly contact each other, a barrier may be relatively low in a structure in which the SixC1-xN functional layer is formed between the barrier layer and the electrode. Accordingly, an operating voltage may be lowered to increase a current density.

Abstract translation: 通过在阻挡层上形成SixC1-xN功能层，氮化物系半导体器件可以提高阻挡层的表面粗糙度，并且可以通过例如抑制铝（Al）和氧（Al O）在阻挡层上彼此结合。 此外，当与阻挡层和电极直接接触的结构相比时，在阻挡层和电极之间形成SixC1-xN功能层的结构中，阻挡层可能相对较低。 因此，可以降低工作电压以增加电流密度。