Dormancy mode control method and apparatus of portable terminal
    11.
    发明授权
    Dormancy mode control method and apparatus of portable terminal 有权
    便携式终端的休眠模式控制方法和装置

    公开(公告)号:US09210659B2

    公开(公告)日:2015-12-08

    申请号:US13902148

    申请日:2013-05-24

    Inventor: Taehwan Kim

    CPC classification number: H04W52/0225 Y02D70/164

    Abstract: A method and an apparatus for controlling a dormancy mode of the portable terminal by minimizing the dormancy mode entry delay of the display in power-off state are provided. The method includes starting, when the application processor and the communication processor stop data communication in display power-off state, a dormancy mode timer, checking, when the dormancy mode timer expires, a dormancy mode flag indicating communication channel state, and entering, when the dormancy mode flag indicates a communication channel connection release state, the dormancy mode, wherein the dormancy mode timer counts a number of segments constituting a maximum standby time for entering the dormancy mode.

    Abstract translation: 提供了一种通过最小化断电状态下的显示器的休眠模式进入延迟来控制便携式终端的休眠模式的方法和装置。 该方法包括当应用处理器和通信处理器在显示器断电状态下停止数据通信时,启动休眠模式定时器,当休眠模式定时器期满时,检查指示通信信道状态的休眠模式标志,并且进入 休眠模式标志指示通信信道连接释放状态,休眠模式,其中休眠模式定时器对构成进入休眠模式的最大待机时间的段数进行计数。

    SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD FOR THE SAME

    公开(公告)号:US20250015049A1

    公开(公告)日:2025-01-09

    申请号:US18412447

    申请日:2024-01-12

    Abstract: A semiconductor package includes a redistribution line structure that has a redistribution line layer. A first semiconductor chip is disposed above the redistribution line structure and includes a first region with a first thickness and a second region with a second thickness that is less than the first thickness. A sub-semiconductor package includes a second semiconductor chip and is disposed above the second region of the first semiconductor chip. A silicon through via penetrates the second region of the first semiconductor chip and electrically connects the sub-semiconductor package with the redistribution line structure. A sealant seals at least a portion of each of the first semiconductor chip and the sub-semiconductor package. The sub-semiconductor package is disposed within the second region of the first semiconductor chip.

    Semiconductor package
    13.
    发明授权

    公开(公告)号:US12142544B2

    公开(公告)日:2024-11-12

    申请号:US17734700

    申请日:2022-05-02

    Abstract: A semiconductor package may include vertically-stacked semiconductor chips and first, second, and third connection terminals connecting the semiconductor chips to each other. Each of the semiconductor chips may include a semiconductor substrate, an interconnection layer on the semiconductor substrate, penetration electrodes connected to the interconnection layer through the semiconductor substrate, and first, second, and third groups on the interconnection layer. The interconnection layer may include an insulating layer and first and second metal layers in the insulating layer. The first and second groups may be in contact with the second metal layer, and the third group may be spaced apart from the second metal layer. Each of the first and third groups may include pads connected to a corresponding one of the first and third connection terminals in a many-to-one manner. The second group may include pads connected to the second connection terminal in a one-to-one manner.

    SEMICONDUCTOR PACKAGE
    16.
    发明申请

    公开(公告)号:US20240404955A1

    公开(公告)日:2024-12-05

    申请号:US18800320

    申请日:2024-08-12

    Abstract: A semiconductor package includes a redistribution structure, a lower semiconductor device arranged on the redistribution structure and including first through electrodes each having a first horizontal width, a connecting substrate arranged on the redistribution structure and spaced apart from the lower semiconductor device in a horizontal direction and including second through electrodes each having a second horizontal width greater than the first horizontal width, a first molding layer arranged on the redistribution structure and surrounding a side surface of the lower semiconductor device and a side surface of the connecting substrate, and an upper semiconductor device arranged on the lower semiconductor device and the connecting substrate, the upper semiconductor device electrically connected to the first and second through electrodes. A plane area of the upper semiconductor device is greater than a plane area of the lower semiconductor device, and the first horizontal width is about 1 μm to about 7 μm and the second horizontal width is about 10 μm to about 20 μm.

    SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230092410A1

    公开(公告)日:2023-03-23

    申请号:US17736500

    申请日:2022-05-04

    Abstract: A semiconductor package includes a first semiconductor chip including first through electrodes and having a first hot zone in which the first through electrodes are disposed; a heat redistribution chip disposed on the first semiconductor chip, having a cool zone overlapping the first hot zone in a stacking direction with respect to the first semiconductor chip, and including first heat redistribution through electrodes disposed outside of an outer boundary of the cool zone and electrically connected to the first through electrodes, respectively; a second semiconductor chip disposed on the heat redistribution chip, having a second hot zone overlapping the cool zone in the stacking direction, and including second through electrodes disposed in the second hot zone and electrically connected to the first heat redistribution through electrodes, respectively; and a first thermal barrier layer disposed between the first hot zone and the cool zone, wherein the first through electrodes are electrically connected to the second through electrodes by bypassing the cool zone via the first heat redistribution through electrodes.

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