公开(公告)号：US20240349621A1

公开(公告)日：2024-10-17

申请号：US18752866

申请日：2024-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongjae Kim ,  Kuhoon Chung ,  Gwanhyeob Koh ,  Bae-Seong Kwon ,  Kyungtae Nam

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01

CPC classification number: H10N50/80 ,  H10B61/20 ,  H10N50/01

Abstract: A magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. The data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug. The lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate. The first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.

公开(公告)号：US11690231B2

公开(公告)日：2023-06-27

申请号：US17019641

申请日：2020-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Pil Ko ,  Yongjae Kim

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01

CPC classification number: H10B61/22 ,  H10N50/01 ,  H10N50/80

Abstract: A method of fabricating a semiconductor device including providing a substrate; forming first and second lower conductive patterns, the and second lower conductive patterns being buried in an interlayer dielectric layer; forming a capping layer on the interlayer dielectric layer and a dummy layer on the capping layer; etching an exposed upper portion of the first lower conductive pattern to form a trench; forming a metal layer that covers the interlayer dielectric layer and the dummy layer such that the metal layer fills the trench; forming a magnetic tunnel junction layer on the metal layer; performing a patterning process to form a memory cell; and forming a first protective layer that covers a lateral surface of the memory cell, wherein, in the patterning process, the metal layer on the top surface of the interlayer dielectric layer is etched to form a first bottom electrode in the trench.

公开(公告)号：US11152561B2

公开(公告)日：2021-10-19

申请号：US16867138

申请日：2020-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bae-Seong Kwon ,  Yongjae Kim ,  Kyungtae Nam ,  Kuhoon Chung

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic memory device includes a lower contact plug on a substrate, a magnetic tunnel junction pattern on the lower contact plug, a bottom electrode, which is between the lower contact plug and the magnetic tunnel junction pattern and is in contact with a bottom surface of the magnetic tunnel junction pattern, and a top electrode on a top surface of the magnetic tunnel junction pattern. Each of the bottom electrode, the magnetic tunnel junction pattern, and the top electrode has a thickness in a first direction, which is perpendicular to a top surface of the substrate. A first thickness of the bottom electrode is about 0.6 to 1.1 times a second thickness of the magnetic tunnel junction pattern.

公开(公告)号：US10897006B2

公开(公告)日：2021-01-19

申请号：US16286718

申请日：2019-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kilho Lee ,  Gwanhyeob Koh ,  Yongjae Kim ,  Yoonjong Song

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetic memory device including a substrate including a cell region and a peripheral circuit region; a first interlayer insulating layer covering the cell region and the peripheral circuit region of the substrate; interconnection lines in the first interlayer insulating layer; a peripheral conductive line and a peripheral conductive contact on the first interlayer insulating layer on the peripheral circuit region, the peripheral conductive contact being between the peripheral conductive line and a corresponding one of the interconnection lines; a bottom electrode contact on the first interlayer insulating layer on the cell region and connected to a corresponding one of the interconnection lines; and a data storage pattern on the bottom electrode contact, wherein the peripheral conductive line is at a height between a top surface of the bottom electrode contact and a bottom surface of the bottom electrode contact.

公开(公告)号：US10098804B2

公开(公告)日：2018-10-16

申请号：US14692257

申请日：2015-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyung Lee ,  Yongjae Kim ,  Jeonghun Kim ,  Youngdo Kwon ,  Se-Gon Roh ,  Youn Baek Lee ,  Jongwon Lee ,  Byungjune Choi ,  Hyun Do Choi

IPC: A61H3/00 ,  A61H1/02 ,  A61F5/01 ,  B25J9/00

Abstract: A walking assistance apparatus for preventing offset occurring in between a rotating axis of a hip joint of a user and a rotating shaft of the walking assistance apparatus may be provided. The walking assistance apparatus includes a waist fixing apparatus configured to be fixed to a waist of a user, a connecting guide mounted at the waist fixing apparatus and configured to slide in an extension direction of the waist fixing apparatus and rotate on a rotating shaft extending in a vertical direction perpendicular to the extension direction, a rail unit mounted at one side of the connecting guide, the rail unit extending in a vertical direction, and a hip joint configured to slide along the rail unit.