公开(公告)号：US11003551B2

公开(公告)日：2021-05-11

申请号：US16361212

申请日：2019-03-22

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Daniel Linnen ,  Ashish Ghai ,  Khanfer Kukkady

IPC: G06F11/00 ,  G06F11/14 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C16/04 ,  G11C16/34

Abstract: A non-volatile storage apparatus receives first data from an entity external to the non-volatile storage apparatus, combines the first data with other data being stored in the non-volatile storage apparatus to create combined data, performs a programming process to program the first data into a first location, determines that the programming process failed, intentionally corrupts the first data programmed into the first location, recovers the first data from the combined data, and reprograms the recovered first into a second location.

公开(公告)号：US10290354B1

公开(公告)日：2019-05-14

申请号：US15799666

申请日：2017-10-31

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Daniel Linnen ,  Srikar Peesari ,  Kirubakaran Periyannan ,  Avinash Rajagiri ,  Shantanu Gupta ,  Jagdish Sabde ,  Ashish Ghai ,  Deepak Bharadwaj ,  Sukhminder Singh Lobana ,  Shrikar Bhagath

IPC: G11C5/06 ,  G11C16/10 ,  H01L27/11573 ,  H01L27/11529 ,  G11C16/04

Abstract: A partial memory die is missing one or more components. One example of a partial memory die includes an incomplete memory structure such that the partial memory die is configured to successfully perform programming, erasing and reading of the incomplete memory structure.