公开(公告)号：US20220375958A1

公开(公告)日：2022-11-24

申请号：US17328302

申请日：2021-05-24

申请人： SANDISK TECHNOLOGIES LLC

发明人： Seiji SHIMABUKURO ,  Takashi YAMAHA

IPC分类号： H01L27/11575 ,  H01L27/11519 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11587 ,  H01L27/11595 ,  H01L27/11597 ,  H01L21/768

摘要： A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through a first region of the alternating stack, memory opening fill structures located in the memory openings, and support pillar structures vertically extending through a second region of the alternating stack. Each of the support pillar structures includes a central columnar structure and a set of fins laterally protruding from the central columnar structure at levels of a subset of the electrically conductive layers.

公开(公告)号：US20220223614A1

公开(公告)日：2022-07-14

申请号：US17146866

申请日：2021-01-12

申请人： SANDISK TECHNOLOGIES LLC

发明人： Shunsuke TAKUMA ,  Yuji TOTOKI ,  Seiji SHIMABUKURO ,  Tatsuya HINOUE ,  Kengo KAJIWARA ,  Akihiro TOBIOKA

IPC分类号： H01L27/11575 ,  H01L23/522 ,  H01L23/00 ,  H01L27/11556 ,  H01L27/11548 ,  H01L27/11582

摘要： At least one vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate. Rows of backside support pillar structures are formed through the at least one vertically alternating sequence. Memory stack structures are formed through the at least one vertically alternating sequence. A two-dimensional array of discrete backside trenches is formed through the at least one vertically alternating sequence. Contiguous combinations of a subset of the backside trenches and a subset of the backside support pillar structures divide the at least one vertically alternating sequence into alternating stacks of insulating layers and sacrificial material layers. The sacrificial material layers are replaced with electrically conductive layers while the backside support pillar structures provide structural support to the insulating layers.

公开(公告)号：US20210358936A1

公开(公告)日：2021-11-18

申请号：US17036070

申请日：2020-09-29

申请人： SANDISK TECHNOLOGIES LLC

发明人： Shunsuke TAKUMA ,  Seiji SHIMABUKURO ,  Kengo KAJIWARA

IPC分类号： H01L27/11575 ,  H01L23/00 ,  H01L27/11556 ,  H01L27/11548 ,  H01L27/11582

摘要： A alternating stack of insulating layers and sacrificial material layers is formed over a substrate. An array of memory opening fill structures and an array of support pillar structures are formed through the alternating stack. Backside trenches are formed through the alternating stack by performing an anisotropic etch process. The anisotropic etch process etches peripheral portions of a subset of the array of support pillar structures. The sacrificial material layers are replaced with electrically conductive layer by forming backside recesses while the support pillar structures provide mechanical support to the insulating layers.