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公开(公告)号：US20210197224A1
公开(公告)日：2021-07-01
申请号：US17133647
申请日：2020-12-24
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hiroshi ABE , Takashi OTA , Takaaki ISHIZU , Kenji KOBAYASHI , Ryo MURAMOTO , Sei NEGORO , Manabu OKUTANI , Wataru SAKAI
Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film, a liquid film heat retaining step of keeping the liquid film warm, a gas phase layer forming step of forming a gas phase layer which holds the processing liquid on a center portion of the liquid film, an opening forming step of forming an opening in the center portion of the liquid film by excluding the processing liquid held by the gas phase layer, a substrate rotating step of rotating the substrate around a rotation axis, and an opening expanding step of expanding the opening, while a state in which the gas phase layer is formed on an inner circumferential edge of the liquid film is maintained, by moving the irradiation region toward a circumferential edge portion of the substrate while the liquid film heat retaining step and the substrate rotating step are performed.
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公开(公告)号：US20190063834A1
公开(公告)日：2019-02-28
申请号：US16047633
申请日：2018-07-27
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Manabu OKUTANI , Noriyuki KIKUMOTO , Naohiko YOSHIHARA , Hiroshi ABE
Abstract: A substrate drying method for drying a front surface of a substrate having a pattern includes a sublimation-agent-liquid-film placing step of placing a liquid film of a liquid sublimation-agent on the front surface of the substrate, a high vapor-pressure liquid placing step of placing a liquid film of a high vapor-pressure liquid that has vapor pressure higher than the sublimation agent and that does not include water on the liquid film of the sublimation-agent placed on the front surface of the substrate, a vaporizing/cooling step of losing vaporization heat in response to vaporization of the high vapor-pressure liquid, and, cooling the sublimation-agent, and, as a result, solidifying the liquid film of the sublimation-agent, and, forming a sublimation-agent film on the front surface of the substrate, and a sublimating step of sublimating the sublimation-agent film.
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公开(公告)号：US20190063833A1
公开(公告)日：2019-02-28
申请号：US16045177
申请日：2018-07-25
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Manabu OKUTANI , Noriyuki KIKUMOTO , Naohiko YOSHIHARA , Hiroshi ABE
IPC: F26B5/04 , H01L21/304 , H01L21/67
Abstract: A substrate drying method includes a sublimation-agent-liquid-film placing step of placing a liquid film of a liquid sublimation agent on the front surface of the substrate, a high vapor-pressure liquid supply step of supplying a high vapor-pressure liquid that has vapor pressure higher than the sublimation agent and that does not include water to a rear surface that is a surface on a side opposite to the front surface in the substrate, a vaporizing/cooling step of, after the liquid film of the sublimation agent is placed on the front surface of the substrate, stopping supplying the high vapor-pressure liquid, and, as a result, losing vaporization heat in response to vaporization of the high vapor-pressure liquid, and, as a result, cooling the sublimation agent, and, as a result, solidifying the liquid film of the sublimation agent and a sublimating step of sublimating a sublimation-agent film.
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公开(公告)号：US20180193886A1
公开(公告)日：2018-07-12
申请号：US15849794
申请日：2017-12-21
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hiroshi ABE , Manabu OKUTANI , Naohiko YOSHIHARA
CPC classification number: B08B7/0014 , B08B3/08 , B08B3/106 , B08B2203/007 , H01L21/02057 , H01L21/67034 , H01L21/67167 , H01L21/68714
Abstract: A substrate processing method includes a substrate holding step that a substrate is held by a substrate holding unit that holds the substrate horizontally, a sealing step of sealing an internal space of a chamber in a state where the substrate holding unit that holds the substrate is housed in the internal space of the chamber, a liquid film forming step of forming a liquid film of processing liquid, which processes an upper surface of the substrate, by supplying the processing liquid to the upper surface of the substrate which is held horizontally, a pressurizing step of pressurizing the internal space until a pressure of the internal space reaches a first pressure which is higher than an atmospheric pressure, by supplying a gas to the internal space, a heating step of heating the substrate such that a vapor layer of processing liquid is formed between the liquid film and the substrate in a state where the pressure of the internal space reaches the first pressure, and a liquid film excluding step of excluding the liquid film from the substrate by evaporating the processing liquid, by reducing the pressure of the internal space until the pressure of the internal space reaches a second pressure, which is lower than the first pressure, while keeping a state where the vapor layer of the processing liquid between the liquid film and the substrate is formed.
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公开(公告)号：US20200294843A1
公开(公告)日：2020-09-17
申请号：US16889834
申请日：2020-06-02
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Takashi OTA , Manabu OKUTANI , Hiroshi ABE
IPC: H01L21/687 , H01L21/67
Abstract: A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.
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Patent Agency Ranking
公开(公告)号：US20190091736A1
公开(公告)日：2019-03-28
申请号：US16136317
申请日：2018-09-20
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Manabu OKUTANI , Hiroaki TAKAHASHI , Masayuki OTSUJI , Hiroshi ABE , Chikara MAEDA , Hitoshi NAKAI , Yuta SASAKI
Abstract: A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.
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公开(公告)号：US20200243350A1
公开(公告)日：2020-07-30
申请号：US16727993
申请日：2019-12-27
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Manabu OKUTANI , Tsutomu OSUKA , Katsuei HIGASHI , Hiroshi ABE , Naohiko YOSHIHARA
IPC: H01L21/67
Abstract: In substrate processing, by supplying a first processing liquid onto an upper surface 91 of a substrate 9 held in a horizontal state, a liquid film 81 of the first processing liquid which entirely covers the upper surface 91 is formed. Further, by heating the substrate 9, a vapor layer 82 of the first processing liquid is formed between the upper surface 91 and the liquid film 81 of the first processing liquid on the upper surface 91. Then, by supplying a second processing liquid onto the upper surface 91 of the substrate 9, the liquid film 81 of the first processing liquid is removed from the upper surface 91. It is thereby possible to appropriately remove extraneous matters 89 from the upper surface 91 of the substrate 9, which are taken in the liquid film 81 of the first processing liquid as the vapor layer 82 is formed.
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公开(公告)号：US20190096737A1
公开(公告)日：2019-03-28
申请号：US16080763
申请日：2017-02-27
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hiroshi ABE , Toyohide HAYASHI , Kenji KOBAYASHI
IPC: H01L21/687 , H01L21/67 , H01L21/304
CPC classification number: H01L21/68764 , H01L21/304 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67103 , H01L21/67115 , H01L21/6715 , H01L21/67248 , H01L21/68728 , H01L21/68792
Abstract: A substrate processing apparatus includes a spin base on which a chuck member that holds a peripheral edge of a substrate is disposed, a motor which rotates the spin base, a heater unit which is positioned between the substrate held by the chuck member and an upper surface of the spin base, a processing liquid supply unit which supplies a processing liquid toward a surface of the substrate held by the chuck member, and a microwave generating unit which generates microwaves to a lower surface of the substrate from the heater unit. The microwave generating unit may include a microwave generating member which includes a waveguide disposed in the heater unit, microwave oscillator which is disposed outside the heater unit and a coaxial cable which connects the waveguide to the microwave oscillator.
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公开(公告)号：US20180087836A1
公开(公告)日：2018-03-29
申请号：US15697670
申请日：2017-09-07
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Naohiko YOSHIHARA , Manabu OKUTANI , Takashi OTA , Hiroshi ABE
Abstract: A substrate processing method includes a substrate holding step of horizontally holding a substrate, a substrate rotating step of rotating the substrate held horizontally around a rotational axis along a vertical direction, a liquid-film forming step of forming a liquid film of a first organic solvent that is used to process an upper surface of the substrate on the upper surface of the substrate by supplying the first organic solvent to the upper surface of the substrate held horizontally, a vapor supplying step of supplying a vapor of a second organic solvent to a space between a facing surface of a heater unit that has the facing surface facing a lower surface of the substrate held horizontally and the lower surface of the substrate, a substrate heating step of heating the substrate being in a rotational state by means of the vapor of the second organic solvent in parallel with the substrate rotating step and the liquid-film forming step, and a substrate drying step of, after the substrate heating step, excluding the liquid film of the first organic solvent from the substrate held horizontally and drying the upper surface of the substrate in a state in which the rotation of the substrate is stopped and the substrate is in contact with the heater unit.
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公开(公告)号：US20170287769A1
公开(公告)日：2017-10-05
申请号：US15460875
申请日：2017-03-16
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Takashi OTA , Manabu OKUTANI , Hiroshi ABE
IPC: H01L21/687 , B08B3/08 , H01L21/67 , B08B3/02
Abstract: A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.
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