公开(公告)号：US20190237322A1

公开(公告)日：2019-08-01

申请号：US16257174

申请日：2019-01-25

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Manabu OKUTANI ,  Hiroshi ABE

IPC: H01L21/02 ,  H01L21/67 ,  B08B3/10 ,  H01L21/687

CPC classification number: H01L21/02057 ,  B08B3/10 ,  H01L21/02054 ,  H01L21/02087 ,  H01L21/67051 ,  H01L21/6875

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film of the processing liquid on the upper surface of the substrate; a liquid filling heating step of supplying a heating medium to a space between a heater unit and the substrate to thereby fill the space with the heating medium, and heating the heating medium by the heater unit, an opening defining step of defining an opening in the central region of the liquid film in a state where the substrate is heated in the liquid filling heating step such that the temperature of the substrate is the boiling point of the processing liquid or higher, and an opening enlarging step of enlarging the opening while rotating the base to thereby rotate the substrate. The liquid filling heating step is executed in parallel with the opening enlarging step at least during part of a period of the opening enlarging step.

公开(公告)号：US20190172733A1

公开(公告)日：2019-06-06

申请号：US16203727

申请日：2018-11-29

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukifumi YOSHIDA ,  Manabu OKUTANI ,  Hiroshi ABE ,  Shuichi YASUDA ,  Yasunori KANEMATSU ,  Hitoshi NAKAI

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/677 ,  H01L21/02

Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

公开(公告)号：US20220331845A1

公开(公告)日：2022-10-20

申请号：US17851919

申请日：2022-06-28

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukifumi YOSHIDA ,  Manabu OKUTANI ,  Hiroshi ABE ,  Shuichi YASUDA ,  Yasunori KANEMATSU ,  Hitoshi NAKAI

IPC: B08B7/00 ,  B08B3/02 ,  B08B7/04 ,  B08B13/00

Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

公开(公告)号：US20210331192A1

公开(公告)日：2021-10-28

申请号：US17359730

申请日：2021-06-28

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukifumi YOSHIDA ,  Hiroaki TAKAHASHI ,  Masayuki OTSUJI ,  Manabu OKUTANI ,  Chikara MAEDA ,  Hiroshi ABE ,  Shuichi YASUDA ,  Yasunori KANEMATSU

IPC: B05B12/10 ,  B08B3/10 ,  B08B7/00 ,  H01L21/02 ,  H01L21/67

Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate, a holding layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removing the particle holding layer from the substrate, a liquid film of the second processing liquid, a solidifying step of cooling the liquid film to a temperature not more than a melting point of the sublimable substance to make the liquid film solidify on the substrate and form a solid film, and a sublimating step of sublimating and thereby removing the solid film from the substrate.

公开(公告)号：US20210031228A1

公开(公告)日：2021-02-04

申请号：US16935204

申请日：2020-07-22

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Manabu OKUTANI ,  Hiroshi ABE ,  Takaaki ISHIZU

IPC: B05C11/06 ,  B05D3/00 ,  B05D7/00

Abstract: In a second liquid supply step, a second liquid film and a first liquid film surrounding a side of the second liquid film are formed on an upper surface of a substrate. Then, in a vapor layer formation step, by heating the substrate, a second vapor layer is formed by evaporating the second liquid contacting the upper surface of the substrate, and the second liquid film is held on the second vapor layer. Since the second liquid included in the second liquid film has a high vapor pressure, a height position of a lower surface of the floating second liquid film may be kept high. By blowing a gas to the floating second liquid film, a hole is formed in the second liquid film, and by expanding the hole toward an outer periphery of the substrate, the first liquid and the second liquid are removed outside the substrate.

公开(公告)号：US20190176179A1

公开(公告)日：2019-06-13

申请号：US16203719

申请日：2018-11-29

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukifumi YOSHIDA ,  Hiroaki TAKAHASHI ,  Masayuki OTSUJI ,  Manabu OKUTANI ,  Chikara MAEDA ,  Hiroshi ABE ,  Shuichi YASUDA ,  Yasunori KANEMATSU

IPC: B05B12/10 ,  B08B3/10 ,  B05D1/00 ,  B05B1/24 ,  H01L21/67

Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate, a holding layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removing the particle holding layer from the substrate, a liquid film of the second processing liquid, a solidifying step of cooling the liquid film to a temperature not more than a melting point of the sublimable substance to make the liquid film solidify on the substrate and form a solid film, and a sublimating step of sublimating and thereby removing the solid film from the substrate.

公开(公告)号：US20190096705A1

公开(公告)日：2019-03-28

申请号：US16053868

申请日：2018-08-03

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hiroshi ABE ,  Manabu OKUTANI ,  Takashi OTA

IPC: H01L21/67 ,  H01L21/02 ,  B05D1/00

Abstract: A substrate processing method for processing a surface of a substrate includes: a first solvent supply step (a) of supplying IPA to a surface of a substrate while rotating the substrate to treat the surface; a modification treatment liquid supply step (b) of supplying a silylating solution after the first solvent supply step to form a liquid film; and a step (c) of heating the substrate in the first solvent supply step and the modification treatment liquid supply step. The step (c) is configured such that an amount of heat per unit time to be applied to the substrate in the modification treatment liquid supply step is larger than an amount of heat per unit time applied to the substrate in the first solvent supply step.

公开(公告)号：US20180272376A1

公开(公告)日：2018-09-27

申请号：US15896137

申请日：2018-02-14

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hiroshi ABE ,  Manabu OKUTANI ,  Takashi OTA ,  Naohiko YOSHIHARA

IPC: B05C9/14 ,  B08B3/10 ,  B05C11/10

CPC classification number: B05C9/14 ,  B05C5/02 ,  B05C11/1039 ,  B08B3/10 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/68728 ,  H01L21/68742

Abstract: A substrate treatment apparatus includes: a substrate holding unit; a rotator for rotating the substrate holding unit; a first liquid nozzle for supplying a rinsing liquid; a second liquid nozzle for supplying a low surface tension liquid; a heater ; a lifting mechanism for relatively moving up and down the heater between a contact position allowing the heater to be brought into contact with the lower surface of the substrate and a separation position allowing the heater to be separated from the substrate; a gas nozzle provided in an upper surface of the heater to suck the substrate; a suction pump for sucking an atmosphere above the heater through the gas nozzle; a gas supply source for supplying an inert gas toward above the heater through the gas nozzle; and a controller for selectively performing suction of the atmosphere or supply of the inert gas, through the gas nozzle.

公开(公告)号：US20240261814A1

公开(公告)日：2024-08-08

申请号：US18638692

申请日：2024-04-18

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hiroshi ABE ,  Takashi OTA ,  Takaaki ISHIZU ,  Kenji KOBAYASHI ,  Ryo MURAMOTO ,  Sei NEGORO ,  Manabu OKUTANI ,  Wataru SAKAI

IPC: B05C11/08 ,  B05B1/24 ,  G03F7/40 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H05B3/00

CPC classification number: B05C11/08 ,  B05B1/24 ,  G03F7/40 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/68764 ,  H01L21/68785 ,  H05B3/0047

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film, a liquid film heat retaining step of keeping the liquid film warm, a gas phase layer forming step of forming a gas phase layer which holds the processing liquid on a center portion of the liquid film, an opening forming step of forming an opening in the center portion of the liquid film by excluding the processing liquid held by the gas phase layer, a substrate rotating step of rotating the substrate around a rotation axis, and an opening expanding step of expanding the opening, while a state in which the gas phase layer is formed on an inner circumferential edge of the liquid film is maintained, by moving the irradiation region toward a circumferential edge portion of the substrate while the liquid film heat retaining step and the substrate rotating step are performed.

公开(公告)号：US20220189762A1

公开(公告)日：2022-06-16

申请号：US17686471

申请日：2022-03-04

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Manabu OKUTANI ,  Hiroaki TAKAHASHI ,  Masayuki OTSUJI ,  Hiroshi ABE ,  Chikara MAEDA ,  Hitoshi NAKAI ,  Yuta SASAKI

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/67 ,  B08B3/10

Abstract: A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.