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公开(公告)号：US20220351967A1
公开(公告)日：2022-11-03
申请号：US17859346
申请日：2022-07-07
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Masayuki OTSUJI , Hiroaki TAKAHASHI , Masahiko KATO , Yu YAMAGUCHI , Yuta SASAKI
IPC: H01L21/02 , B08B3/08 , H01L21/687 , H01L21/67 , B08B7/00
Abstract: To dry a substrate formed with a pattern on a front surface satisfactorily and with excellent drying performance, a substrate processing method comprises: a liquid film formation step of forming a liquid film of a processing liquid, in which cyclohexanone oxime is dissolved in a solvent, on a front surface of a substrate formed with a pattern by supplying the processing liquid to the front surface of the substrate; a solidified film formation step of forming a solidified film of the cyclohexanone oxime by solidifying the liquid film of the processing liquid; and a sublimation step of removing the solidified film from the front surface of the substrate by sublimating the solidified film.
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2.发明申请公开(公告)号：US20190390320A1
公开(公告)日：2019-12-26
申请号：US16445451
申请日：2019-06-19
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Yuta SASAKI , Masayuki OTSUJI , Naozumi FUJIWARA , Masahiko KATO , Yu YAMAGUCHI , Hiroaki TAKAHASHI
Abstract: A pre-drying processing liquid containing a sublimable substance that changes to gas without passing through to a liquid and a solvent in which the sublimable substance dissolves is supplied to a front surface of a substrate on which a pattern has been formed. Thereafter, the solvent is evaporated from the pre-drying processing liquid on the front surface of the substrate to thereby form a solidified body containing the sublimable substance on the front surface of the substrate. Thereafter, the solidified body is sublimated and thereby removed from the front surface of the substrate. A value acquired by multiplying a ratio of the thickness of the solidified body to the height of the pattern by 100 is greater than 76 and less than 219.
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公开(公告)号：US20190091736A1
公开(公告)日：2019-03-28
申请号：US16136317
申请日：2018-09-20
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Manabu OKUTANI , Hiroaki TAKAHASHI , Masayuki OTSUJI , Hiroshi ABE , Chikara MAEDA , Hitoshi NAKAI , Yuta SASAKI
Abstract: A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.
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公开(公告)号：US20180047576A1
公开(公告)日：2018-02-15
申请号：US15557146
申请日：2016-02-29
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hiroaki TAKAHASHI , Masayuki OTSUJI
IPC: H01L21/306 , H01L21/67 , H01L21/683
CPC classification number: H01L21/30604 , H01L21/02057 , H01L21/31111 , H01L21/32134 , H01L21/67028 , H01L21/6708 , H01L21/6833
Abstract: A substrate processing device includes a control device that controls a substrate holding unit, an etching liquid supply unit, and a plurality of electrodes. The control device performs an etching step for supplying an etching liquid to a substrate, while rotating the substrate about a rotation axis line; and in parallel with the etching step, an etching electrostatically charging step for electrostatically charging the substrate by applying voltages to the electrodes such that the absolute value of the voltage to be applied to the first electrode and the absolute value of the voltage to be applied to the second electrode are increased in this order.
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公开(公告)号：US20210331192A1
公开(公告)日：2021-10-28
申请号：US17359730
申请日：2021-06-28
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Yukifumi YOSHIDA , Hiroaki TAKAHASHI , Masayuki OTSUJI , Manabu OKUTANI , Chikara MAEDA , Hiroshi ABE , Shuichi YASUDA , Yasunori KANEMATSU
Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate, a holding layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removing the particle holding layer from the substrate, a liquid film of the second processing liquid, a solidifying step of cooling the liquid film to a temperature not more than a melting point of the sublimable substance to make the liquid film solidify on the substrate and form a solid film, and a sublimating step of sublimating and thereby removing the solid film from the substrate.
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Patent Agency Ranking
公开(公告)号：US20190176179A1
公开(公告)日：2019-06-13
申请号：US16203719
申请日：2018-11-29
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Yukifumi YOSHIDA , Hiroaki TAKAHASHI , Masayuki OTSUJI , Manabu OKUTANI , Chikara MAEDA , Hiroshi ABE , Shuichi YASUDA , Yasunori KANEMATSU
Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate, a holding layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removing the particle holding layer from the substrate, a liquid film of the second processing liquid, a solidifying step of cooling the liquid film to a temperature not more than a melting point of the sublimable substance to make the liquid film solidify on the substrate and form a solid film, and a sublimating step of sublimating and thereby removing the solid film from the substrate.
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公开(公告)号：US20170186599A1
公开(公告)日：2017-06-29
申请号：US15388281
申请日：2016-12-22
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hiroaki TAKAHASHI , Kazunori FUJIKAWA , Tomonori KOJIMARU , Tomomasa ISHIDA , Ayumi HIGUCHI , Naozumi FUJIWARA , Kana KOMORI , Shota IWAHATA
IPC: H01L21/02 , H01L21/324 , H01L21/67 , H01L21/306
Abstract: The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.
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公开(公告)号：US20160240400A1
公开(公告)日：2016-08-18
申请号：US15019212
申请日：2016-02-09
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hiroaki TAKAHASHI , Yuto Kubo
IPC: H01L21/67 , B08B3/02 , H01L21/687
CPC classification number: H01L21/67017 , B08B3/02 , H01L21/67051 , H01L21/6708
Abstract: A substrate holding unit which holds the substrate, a nozzle which includes a first cylindrical member within which a first flow path along which the first fluid is passed is formed and in which a tip end edge of the first cylindrical member defines, between the tip end edge and a main surface of the substrate, an annular first discharge port that discharges the fluid flowing through the first flow path along the main surface of the substrate radially and a first fluid supply unit which is a fluid supply unit supplying the first fluid to the first flow path of the nozzle and which applies, to the nozzle, a force in a direction apart from the main surface of the substrate, by the discharge of the first fluid from the first discharge port.
Abstract translation: 一种保持基板的基板保持单元，包括第一圆柱形构件的喷嘴，所述第一圆柱形构件形成有第一流体沿着第一流体通过的第一流动路径，并且第一圆柱形构件的末端边缘在顶端 边缘和基板的主表面;环状的第一排出口，其沿着所述基板的主表面径向地排出流过所述第一流路的流体;以及第一流体供给单元，所述第一流体供给单元是将所述第一流体供给到 通过从第一排出口排出第一流体，喷嘴的第一流动路径并且向喷嘴施加沿离开基板的主表面的方向的力。
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公开(公告)号：US20230256479A1
公开(公告)日：2023-08-17
申请号：US18305727
申请日：2023-04-24
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Akihisa IWASAKI , Hiroaki TAKAHASHI
CPC classification number: B08B3/08 , H01L21/02057 , B08B2203/002 , H01L21/02052
Abstract: A substrate processing method includes a substrate holding step of holding a substrate having a front surface on which a metal is exposed, an inert gas replacing step of replacing an atmosphere around the front surface of the substrate with an inert gas by supplying an inert gas to a vicinity of the front surface of the substrate, an adjusting step of adjusting a pH of the rinsing liquid so as to form an inactive state in which the metal does not react with the rinsing liquid or so as to form a passive state by allowing the metal to react with the rinsing liquid, and a rinsing liquid supplying step of supplying the rinsing liquid whose pH has been adjusted to the front surface of the substrate after the atmosphere around the front surface of the substrate has been replaced with the inert gas.
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公开(公告)号：US20220189762A1
公开(公告)日：2022-06-16
申请号：US17686471
申请日：2022-03-04
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Manabu OKUTANI , Hiroaki TAKAHASHI , Masayuki OTSUJI , Hiroshi ABE , Chikara MAEDA , Hitoshi NAKAI , Yuta SASAKI
Abstract: A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.
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