公开(公告)号：US20240342672A1

公开(公告)日：2024-10-17

申请号：US18755680

申请日：2024-06-27

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hajime NISHIDE ,  Takashi IZUTA ,  Takatoshi HAYASHI ,  Katsuhiro FUKUI ,  Koichi OKAMOTO ,  Kazuhiro FUJITA ,  Atsuyasu MIURA ,  Kenji KOBAYASHI ,  Sei NEGORO ,  Hiroki TSUJIKAWA

IPC: B01F35/82 ,  B01F23/231 ,  B01F23/237 ,  B01F35/21 ,  B01F35/22 ,  G05D11/00 ,  G05D21/02 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/67 ,  B01F101/58

CPC classification number: B01F35/82 ,  B01F23/231 ,  B01F23/237611 ,  B01F23/237612 ,  B01F23/23765 ,  B01F35/2132 ,  B01F35/2202 ,  G05D11/00 ,  G05D21/02 ,  H01L21/30608 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/6708 ,  B01F2101/58

Abstract: A chemical liquid preparation method of preparing a TMAH-containing chemical liquid, including, a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid; a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid; a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step; and a gas supplying step of supplying the oxygen-containing gas and the inert-gas-containing gas with the supply flow rate ratio acquired in the supply-flow-rate-ratio acquiring step.

公开(公告)号：US20220403242A1

公开(公告)日：2022-12-22

申请号：US17821490

申请日：2022-08-23

Applicant: Tokuyama Corporation ,  SCREEN Holdings Co., Ltd.

Inventor： Yoshiki SEIKE ,  Seiji TONO ,  Kenji KOBAYASHI ,  Sei NEGORO

IPC: C09K13/00 ,  H01L21/3213 ,  H01L21/306

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2   (1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

公开(公告)号：US20220347641A1

公开(公告)日：2022-11-03

申请号：US17867693

申请日：2022-07-19

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hajime NISHIDE ,  Takashi IZUTA ,  Takatoshi HAYASHI ,  Katsuhiro FUKUI ,  Koichi OKAMOTO ,  Kazuhiro FUJITA ,  Atsuyasu MIURA ,  Kenji KOBAYASHI ,  Sei NEGORO ,  Hiroki TSUJIKAWA

IPC: B01F35/82 ,  H01L21/67 ,  G05D21/02 ,  H01L21/306 ,  G05D11/00 ,  H01L21/3213 ,  B01F23/231 ,  B01F35/21 ,  B01F35/22

Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

公开(公告)号：US20210265178A1

公开(公告)日：2021-08-26

申请号：US17182530

申请日：2021-02-23

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Jun SAWASHIMA ,  Takahiro YAMAGUCHI ,  Kenji KOBAYASHI

IPC: H01L21/67

Abstract: Disclosed is a substrate treating apparatus. All treating units are each arranged such that a treatment chamber, a chemical piping space, and an exhaust chamber are located side by side along a transportation space, the chemical piping space is located on a first side of the treatment chamber, and the exhaust chamber faces the chemical piping space across the treatment chamber when seen from the transportation space. The exhaust chamber faces the chemical piping space across the treatment chamber, leading to prevention of obstruction of a passage for passing a pipe, configured to supply a chemical to a substrate held by a holding rotator, by an exhaust pipe. Moreover, a single type of treating units is enough for the substrate treating apparatus instead of two types of treating units currently used. This results in sharing of components by all the treating units.

公开(公告)号：US20210057235A1

公开(公告)日：2021-02-25

申请号：US16977486

申请日：2018-11-22

Applicant: SCREEN HOLDINGS CO., LTD.

Inventor： Sei NEGORO ,  Kenji KOBAYASHI

IPC: H01L21/67

Abstract: TMAH, hydrogen peroxide and water are mixed to make alkaline etching liquid containing TMAH, the hydrogen peroxide and the water and not containing hydrogen fluoride compound. The etching liquid is supplied to a substrate on which a polysilicon film and a silicon oxide film are exposed, thereby etching the polysilicon film while inhibiting etching the silicon oxide film.

公开(公告)号：US20180308715A1

公开(公告)日：2018-10-25

申请号：US16021640

申请日：2018-06-28

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Naohiko YOSHIHARA ,  Kenji KOBAYASHI ,  Manabu OKUTANI

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/10

CPC classification number: H01L21/67028 ,  B08B3/10 ,  H01L21/67103 ,  H01L21/6715 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/68742

Abstract: In parallel with a substrate heating step, a liquid surface sensor is used to monitor the raising of an IPA liquid film. An organic solvent removing step is started in response to the raising of the IPA liquid film over the upper surface of the substrate. At the end of the organic solvent removing step, a visual sensor is used to determine whether or not IPA droplets remain on the upper surface of the substrate.

公开(公告)号：US20240194475A1

公开(公告)日：2024-06-13

申请号：US18555487

申请日：2022-03-23

Applicant: SCREEN Holdings Co., Ltd. ,  DAIKIN INDUSTRIES, LTD.

Inventor： Takaaki ISHIZU ,  Kenji KOBAYASHI ,  Takashi OTA ,  Takashi NAMIKAWA ,  Kazuki HOSODA

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01L21/30604 ,  H01L21/67023

Abstract: A substrate processing method includes supplying a chemical solution to a surface of a substrate (step S11), supplying a rinse liquid to the surface of the substrate after step S11 (step S12), bringing a heated dry processing liquid to the surface of the substrate after step S12 (step S14), and drying the substrate by removing the dry processing liquid from the surface of the substrate (step S15). The dry processing liquid has a lower surface tension than the rinse liquid. The boiling point of the dry processing liquid is higher than the boiling point of the rinse liquid. The dry processing liquid that comes in contact with the surface of the substrate in step S14 has a temperature that is a predetermined contact temperature higher than or equal to the boiling point of the rinse liquid and lower than the boiling point of the dry processing liquid.

公开(公告)号：US20230298895A1

公开(公告)日：2023-09-21

申请号：US18043323

申请日：2021-07-14

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Sei NEGORO ,  Kenji KOBAYASHI

IPC: H01L21/306

CPC classification number: H01L21/30604

Abstract: In the present invention, an alkaline first etching liquid is fed to a substrate, whereby an etching target representing a silicon monocrystal and/or polysilicon is etched. An alkaline second etching liquid is fed to the substrate after or before the first etching liquid is fed to the substrate, whereby the etching target is etched, the second etching liquid containing a compound that inhibits contact between hydroxide ions and the etching target, the difference between the maximum value and the minimum value of the etching speed with respect to the (110) face, the (100) face, and the (111) face of silicon being smaller in the second etching liquid than in the first etching liquid, and the maximum value of the etching speed being smaller in the second etching liquid than in the first etching liquid.

公开(公告)号：US20220148888A1

公开(公告)日：2022-05-12

申请号：US17440212

申请日：2020-01-24

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji KOBAYASHI ,  Masanobu SATO ,  Yuta NAKANO

IPC: H01L21/67

Abstract: In a substrate processing method, a substrate with a pattern including a plurality of structures is processed. The substrate processing method includes a step of increasing hydrophilicity of respective surfaces of the structures, by executing predetermined processing on the structures with a non-liquid substance, from that before execution of the predetermined processing; and a step of supplying a processing liquid to the structures after the step of increasing hydrophilicity.

公开(公告)号：US20210249279A1

公开(公告)日：2021-08-12

申请号：US17245079

申请日：2021-04-30

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji KOBAYASHI ,  Jun SAWASHIMA ,  Yuta NISHIMURA ,  Akito HATANO ,  Motoyuki SHIMAI ,  Toyohide HAYASHI

IPC: H01L21/67

Abstract: A supply flow passage branches into a plurality of upstream flow passages. The plurality of upstream flow passages include a branching upstream flow passage that branches into a plurality of downstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis and discharge processing liquids, supplied via the plurality of upstream flow passages, toward an upper surface of a substrate held by a substrate holding unit.