公开(公告)号：US20170186779A1

公开(公告)日：2017-06-29

申请号：US15390894

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo ITO ,  Takahisa ISHIYAMA ,  Katsuaki TOCHIBAYASHI ,  Yoshinori ANDO ,  Yasutaka SUZUKI ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/7869 ,  H01L2224/05 ,  H01L2224/48463

Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

公开(公告)号：US20250069335A1

公开(公告)日：2025-02-27

申请号：US18711330

申请日：2022-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo ITO ,  Yuki HATA

IPC: G06T19/00 ,  G02B27/01

Abstract: A display apparatus with a novel structure or a display system with a novel structure is provided. The display system includes a first display apparatus capable of AR display and a second display apparatus. The first display apparatus includes a first display portion displaying a first image superimposed on a transmission image. The second display apparatus includes a second display portion. The first display apparatus has a function of obtaining positional information of the second display portion. A display position of the first image is determined on the basis of the positional information of the second display portion.

公开(公告)号：US20160372606A1

公开(公告)日：2016-12-22

申请号：US15182812

申请日：2016-06-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo ITO ,  Daisuke MATSUBAYASHI ,  Masaharu NAGAI ,  Yoshiaki YAMAMOTO ,  Takashi HAMADA ,  Yutaka OKAZAKI ,  Shinya SASAGAWA ,  Motomu KURATA ,  Naoto YAMADE

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/425 ,  H01L21/46 ,  H01L29/04 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L21/425 ,  H01L21/46 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7854 ,  H01L29/7855 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon).

Abstract translation: 一种半导体器件包括：衬底上的第一绝缘层，第一绝缘层上的第一金属氧化物层，第一金属氧化物层上的氧化物半导体层，氧化物半导体层上的第二金属氧化物层， 第二金属氧化物层，第二金属氧化物层上的第二绝缘层，以及栅极绝缘层上的栅电极层。 栅极绝缘层包括与栅电极层的侧表面接触的区域。 第二绝缘层包括与栅极绝缘层接触的区域。 氧化物半导体层包括第一至第三区域。 第一区域包括与栅电极层重叠的区域。 位于第一和第三区域之间的第二区域包括与栅极绝缘层或第二绝缘层重叠的区域。 第二和第三区域各自包括含有元素N（N是磷，氩或氙）的区域。