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公开(公告)号:US20170317111A1
公开(公告)日:2017-11-02
申请号:US15494850
申请日:2017-04-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Yoshinori ANDO , Shinpei MATSUDA , Yuki HATA
IPC: H01L27/12 , H01L29/786 , H01L27/105 , H01L29/423
CPC classification number: H01L27/1225 , H01L27/1052 , H01L27/1207 , H01L27/1233 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.
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公开(公告)号:US20170236842A1
公开(公告)日:2017-08-17
申请号:US15430746
申请日:2017-02-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shinpei MATSUDA , Masayuki SAKAKURA , Yuki HATA , Shuhei NAGATSUKA , Yuta ENDO , Shunpei YAMAZAKI
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1222 , H01L27/1225 , H01L27/1237 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device with high design flexibility is provided. A first transistor and a second transistor having electrical characteristics different from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. For example, semiconductor materials with different electron affinities are used for a semiconductor layer in which a channel of the first transistor is formed and a semiconductor layer in which a channel of the second transistor is formed. This allows the threshold voltages of the first transistor and the second transistor to differ from each other. Forming a gate electrode using a damascene process enables miniaturization and high density of the transistors. Furthermore, a highly-integrated semiconductor device is provided.
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公开(公告)号:US20160005872A1
公开(公告)日:2016-01-07
申请号:US14755670
申请日:2015-06-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Motomu KURATA , Ryota HODO , Shinya SASAGAWA , Yuki HATA
IPC: H01L29/786 , H01L23/535 , H01L27/092 , H01L29/24 , H01L27/12
CPC classification number: H01L27/1207 , H01L21/8258 , H01L23/485 , H01L23/535 , H01L27/0688 , H01L27/092 , H01L27/1156 , H01L27/124 , H01L29/24 , H01L29/7869 , H01L2924/0002 , H01L2924/00
Abstract: To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.
Abstract translation: 提供一种半导体器件,占用小面积并高度集成。 半导体器件包括氧化物半导体层,电极层和接触插塞。 电极层包括与氧化物半导体层接触的一个端部和面向一个端部的另一个端部。 当从上方观察时,另一端部包括半圆形切口部分。 接触塞与半圆形切口部接触。
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公开(公告)号:US20170236840A1
公开(公告)日:2017-08-17
申请号:US15584068
申请日:2017-05-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Motomu KURATA , Ryota HODO , Shinya SASAGAWA , Yuki HATA
IPC: H01L27/12 , H01L23/535 , H01L27/092 , H01L29/786 , H01L27/06
CPC classification number: H01L27/1207 , H01L21/8258 , H01L23/485 , H01L23/535 , H01L27/0688 , H01L27/092 , H01L27/1156 , H01L27/124 , H01L29/24 , H01L29/7869 , H01L2924/0002 , H01L2924/00
Abstract: To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.
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公开(公告)号:US20130207101A1
公开(公告)日:2013-08-15
申请号:US13758291
申请日:2013-02-04
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Atsuo ISOBE , Yuki HATA , Suguru HONDO
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L27/1255 , H01L28/60 , H01L29/0692 , H01L29/41733 , H01L29/42356 , H01L29/42384 , H01L29/78696
Abstract: A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.
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公开(公告)号:US20150318402A1
公开(公告)日:2015-11-05
申请号:US14799015
申请日:2015-07-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Atsuo ISOBE , Yuki HATA , Suguru HONDO
IPC: H01L29/786 , H01L27/12 , H01L29/417 , H01L49/02 , H01L29/06 , H01L29/423
CPC classification number: H01L29/7869 , H01L27/1255 , H01L28/60 , H01L29/0692 , H01L29/41733 , H01L29/42356 , H01L29/42384 , H01L29/78696
Abstract: A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.
Abstract translation: 提供一种包含氧化物半导体并具有良好操作特性的晶体管。 此外,通过使用晶体管,可以提供具有改善的操作特性的半导体。 在平面图中,晶体管的源极和漏极中的一个被环形栅电极包围。 此外,在平面图中,晶体管的源电极和漏电极之一被沟道形成区域包围。 因此,源电极通过在岛状氧化物半导体层的端部中产生的寄生沟道而不与漏电极电连接。
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公开(公告)号:US20250069335A1
公开(公告)日:2025-02-27
申请号:US18711330
申请日:2022-11-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Abstract: A display apparatus with a novel structure or a display system with a novel structure is provided. The display system includes a first display apparatus capable of AR display and a second display apparatus. The first display apparatus includes a first display portion displaying a first image superimposed on a transmission image. The second display apparatus includes a second display portion. The first display apparatus has a function of obtaining positional information of the second display portion. A display position of the first image is determined on the basis of the positional information of the second display portion.
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公开(公告)号:US20140368486A1
公开(公告)日:2014-12-18
申请号:US14477221
申请日:2014-09-04
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Yuki HATA , Jun KOYAMA , Shuhei NAGATSUKA , Akihiro KIMURA
IPC: G09G3/20
CPC classification number: G09G3/2096 , G06F3/14 , G06F3/147 , G09G3/2092 , G09G2330/02 , G09G2370/16 , G09G2380/04 , G09G2380/06 , H04N5/66
Abstract: An object of the present invention is to provide a display device which does not need an input/output terminal such as an FPC or a cable for connecting to the display device and inputting an image signal to the display device directly, and can provide a setting, a display image, and the like which an operator desires. A display device of the present invention includes a display portion, a console portion to operate or input from the exterior, an antenna portion to transmit and receive a radio signal, a controller portion to control a signal input into the console portion and a signal for being transmitted or received in the antenna portion, and a battery portion to convert the radio signal received in the antenna portion into electric power and retain the electric power for driving the display portion.
Abstract translation: 本发明的目的是提供一种显示装置,其不需要诸如FPC或电缆的输入/输出端子来连接到显示装置并且直接将图像信号输入到显示装置,并且可以提供设置 ,显示图像等。 本发明的显示装置包括显示部分,从外部操作或输入的控制台部分,用于发送和接收无线电信号的天线部分,控制部分,用于控制输入到控制台部分的信号,以及用于 在天线部分中被发送或接收,以及电池部分,用于将在天线部分中接收的无线电信号转换为电力并保持用于驱动显示部分的电力。
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公开(公告)号:US20150014685A1
公开(公告)日:2015-01-15
申请号:US14500445
申请日:2014-09-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Toshihiko SAITO , Yuki HATA , Kiyoshi KATO
IPC: H01L27/12
CPC classification number: H01L27/124 , G11C16/0433 , H01L27/11521 , H01L27/11526 , H01L27/1156 , H01L27/12 , H01L27/1225 , H01L28/40
Abstract: An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied.
Abstract translation: 目的是使半导体器件小型化。 另一个目的是减小包括存储单元的半导体器件的驱动电路的面积。 半导体器件包括至少设置有第一半导体元件的元件形成层,设置在元件形成层上的第一布线,设置在第一布线上的中间膜,和与第一布线重叠的第二布线,设置有夹层膜 之间。 第一布线,层间膜和第二布线包括在第二半导体元件中。 第一布线和第二布线是提供相同电位的布线。
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