公开(公告)号：US10749174B2

公开(公告)日：2020-08-18

申请号：US16114312

申请日：2018-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Teruaki Ochiai ,  Shuhei Yoshitomi ,  Takuya Hirohashi ,  Mako Motoyoshi ,  Yohei Momma ,  Junya Goto

IPC: H01M4/13 ,  H01M4/505 ,  H01M4/36 ,  H01M4/131 ,  H01M4/1391

Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.

公开(公告)号：US10558092B2

公开(公告)日：2020-02-11

申请号：US15455244

申请日：2017-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shuhei Yoshitomi ,  Daisuke Kubota ,  Koji Kusunoki

IPC: G02F1/1343 ,  G02F1/1368 ,  G06F1/3234 ,  G02F1/1362

Abstract: A high-definition liquid crystal display device is provided. A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with a high contrast ratio and display quality is provided. A liquid crystal display device capable of being driven at a low voltage is provided. The display device includes, between a pair of substrates, a pixel electrode, a first common electrode, a second common electrode, and a liquid crystal layer. The pixel electrode and the first common electrode are positioned between the liquid crystal layer and one of the substrates. The second common electrode is positioned between the liquid crystal layer and the other substrate. The same potential is supplied to the first common electrode and the second common electrode. The first common electrode includes a portion overlapping with the second common electrode between the display regions of two adjacent subpixels that exhibit different colors. At least one of the pixel electrode and the first common electrode includes a portion that does not overlap with the second common electrode in the display region of the subpixel.

公开(公告)号：US10454102B2

公开(公告)日：2019-10-22

申请号：US15649179

申请日：2017-07-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya Ikenuma ,  Shuhei Yoshitomi ,  Takahiro Kawakami ,  Yumiko Yoneda ,  Yohei Momma

IPC: H01M4/36 ,  H01M10/05 ,  H01M4/04 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/505 ,  H01M4/587 ,  H01M10/0525 ,  H01M4/02

Abstract: To increase the volume density or weight density of lithium ions that can be received and released in and from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese composite oxide represented by LixMnyMzOw that includes a region belonging to a space group C2/c and is covered with a carbon-containing layer is used as the positive electrode active material. The element M is an element other than lithium and manganese. The lithium manganese composite oxide has high structural stability and high capacity.

公开(公告)号：US09666326B2

公开(公告)日：2017-05-30

申请号：US14272718

申请日：2014-05-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Shuhei Yoshitomi ,  Teruaki Ochiai ,  Satoshi Seo ,  Yohei Momma ,  Yumiko Saito

IPC: H01B1/08 ,  H01M4/36 ,  H01M4/131 ,  H01M4/505 ,  C01G45/12

CPC classification number: H01B1/08 ,  C01G45/1242 ,  C01G45/1257 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/80 ,  C01P2006/40 ,  H01M4/131 ,  H01M4/364 ,  H01M4/366 ,  H01M4/505 ,  Y02P70/54

Abstract: To increase the amount of lithium ions that can be received and released in and from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A composite material of crystallites of LiMn2O4 (crystallites with a spinel crystal structure) and crystallites of Li2MnO3 (crystallites with a layered rock-salt crystal structure) is used as a positive electrode active material. The lithium manganese oxide composite has high structural stability and high capacity.

公开(公告)号：US09136188B2

公开(公告)日：2015-09-15

申请号：US14557888

申请日：2014-12-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromichi Godo ,  Shuhei Yoshitomi

IPC: G01R31/26 ,  H01L21/66 ,  H01L29/66 ,  H01L29/786 ,  G01R31/311

CPC classification number: H01L22/14 ,  G01R31/2625 ,  G01R31/311 ,  H01L29/66969 ,  H01L29/7869

Abstract: Provided is a test method by which a transistor whose reliability is low can be detected with low stress and high accuracy in a shorter period of time than a BT test. Provided is to detect a transistor whose reliability is high in a shorter period of time than a BT test and manufacture an electronic device with high reliability efficiently. Hysteresis characteristics revealed in the result of the Vg-Id measurement with light irradiation to the transistor correlate with the result of a BT test; whether the reliability of the transistor is Good or Not-Good can be judged. Accordingly, the test method by which a transistor whose reliability is low can be detected with low stress and high accuracy in a shorter period of time than a BT test can be provided.

Abstract translation: 提供了一种可以在比BT测试更短的时间内以低应力和高精度检测可靠性低的晶体管的测试方法。 提供了在BT测试中更短的时间内检测出可靠性高的晶体管，并有效地制造高可靠性的电子设备。 通过对晶体管的光照射的Vg-Id测量的结果中显示的滞后特性与BT测试的结果相关; 可以判断晶体管的可靠性是好还是不好。 因此，可以在比可以提供BT测试的更短的时间段内以低应力和高精度检测可靠性低的晶体管的测试方法。

公开(公告)号：US11710823B2

公开(公告)日：2023-07-25

申请号：US17852407

申请日：2022-06-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Teruaki Ochiai ,  Shuhei Yoshitomi ,  Takuya Hirohashi ,  Mako Motoyoshi ,  Yohei Momma ,  Junya Goto

IPC: H01M4/505 ,  H01M4/36 ,  H01M4/131 ,  H01M4/1391

CPC classification number: H01M4/505 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/366 ,  H01M2220/30

Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.

公开(公告)号：US10249876B2

公开(公告)日：2019-04-02

申请号：US15874123

申请日：2018-01-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Tatsuya Ikenuma ,  Teruaki Ochiai ,  Shuhei Yoshitomi ,  Mako Motoyoshi ,  Hiroyuki Miyake ,  Yohei Momma ,  Takuya Hirohashi ,  Satoshi Seo

IPC: H01M4/505 ,  H01M4/485 ,  H01M4/48 ,  H01M4/62 ,  H01M4/583 ,  G06F1/16 ,  G04G21/00 ,  G04C10/00 ,  H01M4/36 ,  H01M4/525 ,  H01M10/052

Abstract: A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with unproved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.

公开(公告)号：US09406706B2

公开(公告)日：2016-08-02

申请号：US14521710

申请日：2014-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Shuhei Yoshitomi ,  Takahiro Tsuji ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hiroyuki Tomatsu ,  Masahiko Hayakawa

IPC: H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.