公开(公告)号：US10944014B2

公开(公告)日：2021-03-09

申请号：US16513826

申请日：2019-07-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC: H01L29/786 ,  H01L29/417

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US10685983B2

公开(公告)日：2020-06-16

申请号：US15794464

申请日：2017-10-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo Ito ,  Yutaka Okazaki ,  Takahisa Ishiyama

IPC: H01L27/12 ,  H01L27/115 ,  H01L29/786 ,  H01L27/11556

Abstract: To provide a semiconductor device capable of retaining data for a long time. The semiconductor device includes a first transistor, an insulator covering the first transistor, and a second transistor over the insulator. The first transistor includes a first gate electrode, a second gate electrode overlapping with the first gate electrode, and a semiconductor between the first gate electrode and the second gate electrode. The first gate electrode is electrically connected to one of a source and a drain of the second transistor.

公开(公告)号：US10374097B2

公开(公告)日：2019-08-06

申请号：US15865308

申请日：2018-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC: H01L29/786 ,  H01L29/417

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US10236390B2

公开(公告)日：2019-03-19

申请号：US15652299

申请日：2017-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasumasa Yamane ,  Motomu Kurata ,  Ryota Hodo ,  Takahisa Ishiyama

IPC: H01L29/786 ,  H01L27/105 ,  H01L29/51 ,  H01L29/66 ,  H01L29/49 ,  H01L27/12

Abstract: A semiconductor device having stable electrical characteristics is provided. Alternatively, a highly reliable semiconductor device suitable for miniaturization or high integration is provided. The semiconductor device includes a first barrier layer, a second barrier layer, a third barrier layer, a transistor including an oxide, an insulator, and a conductor. The insulator includes an oxygen-excess region. The insulator and the oxide are between the first barrier layer and the second barrier layer. The conductor is in an opening of the first barrier layer, an opening of the second barrier layer, and an opening of the insulator with the third barrier layer positioned therebetween.

公开(公告)号：US09577107B2

公开(公告)日：2017-02-21

申请号：US14208982

申请日：2014-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Takahisa Ishiyama ,  Masaki Koyama ,  Erumu Kikuchi ,  Takuya Hirohashi ,  Masashi Oota

IPC: H01L21/00 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02678 ,  H01L21/02686 ,  H01L29/66969

Abstract: To improve crystallinity of an oxide semiconductor. To provide a crystalline oxide semiconductor film in which a crystallized region extends to the interface with a base or the vicinity of the interface, and to provide a method for forming the oxide semiconductor film. An oxide semiconductor film containing indium, gallium, and zinc is formed, and the oxide semiconductor film is irradiated with an energy beam, thereby being heated. Note that the oxide semiconductor film includes a c-axis aligned crystal region or microcrystal.

Abstract translation: 为了改善氧化物半导体的结晶度。 提供结晶化区域延伸到与基底或界面附近的界面的结晶氧化物半导体膜，并提供形成氧化物半导体膜的方法。 形成含有铟，镓和锌的氧化物半导体膜，并用能量束照射氧化物半导体膜，由此被加热。 注意，氧化物半导体膜包括c轴取向的晶体区域或微晶体。