公开(公告)号：US20210066113A1

公开(公告)日：2021-03-04

申请号：US16644250

申请日：2018-06-22

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu UMETA ,  Keisuke FUKADA ,  Naoto ISHIBASHI ,  Hironori ATSUMI

IPC: H01L21/687 ,  H01L21/02 ,  C23C16/458 ,  C23C16/32

Abstract: A susceptor (1) of the present invention is a susceptor that is configured to hold a wafer in a CVD apparatus that forms a layer on a wafer through chemical vapor deposition, and includes an external susceptor (2) and an internal susceptor (1). The external susceptor (2) has an opening (2c) that accommodates the internal susceptor (1) in a coupling manner and has a wafer placement surface (2a) on which an outer peripheral portion (Ws) of a wafer is placed. The internal susceptor (1) includes a projection portion (1a) on a surface (1b) facing the wafer (W), and a height (h) of the projection portion (1a) is a height at which the projection portion does not come into contact with the wafer (W) when the wafer (W) is placed on the susceptor.

公开(公告)号：US20200083330A1

公开(公告)日：2020-03-12

申请号：US16616780

申请日：2018-04-19

Applicant: SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

Inventor： Keisuke FUKADA ,  Naoto ISHIBASHI ,  Akira BANDO ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Kazukuni HARA ,  Masami NAITO ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Hirofumi AOKI ,  Toshikazu SUGIURA ,  Katsumi SUZUKI

IPC: H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US20180371640A1

公开(公告)日：2018-12-27

申请号：US16063391

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Tomoya UTASHIRO ,  Hironori ATSUMI

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/687 ,  C30B25/10 ,  C30B25/14

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.