公开(公告)号：US20200083330A1

公开(公告)日：2020-03-12

申请号：US16616780

申请日：2018-04-19

申请人： SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

发明人： Keisuke FUKADA ,  Naoto ISHIBASHI ,  Akira BANDO ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Kazukuni HARA ,  Masami NAITO ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Hirofumi AOKI ,  Toshikazu SUGIURA ,  Katsumi SUZUKI

IPC分类号： H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

摘要： A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US20170345658A1

公开(公告)日：2017-11-30

申请号：US15534317

申请日：2015-12-08

申请人： SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry

发明人： Keisuke FUKADA ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Masami NAITO ,  Kazukuni HARA ,  Takahiro KOZAWA ,  Hirofumi AOKI

IPC分类号： H01L21/205 ,  C30B25/20 ,  C30B25/18 ,  C30B25/14 ,  C23C16/455 ,  C30B29/36 ,  C23C16/42

CPC分类号： H01L21/205 ,  C23C16/325 ,  C23C16/42 ,  C23C16/455 ,  C23C16/4557 ,  C23C16/45574 ,  C30B25/14 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

摘要： A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

公开(公告)号：US20200251561A1

公开(公告)日：2020-08-06

申请号：US16781294

申请日：2020-02-04

申请人： SHOWA DENKO K.K.

发明人： Yoshitaka NISHIHARA ,  Keisuke FUKADA

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L29/36

摘要： A SiC epitaxial wafer includes a SiC epitaxial layer formed on a SiC single crystal substrate, in which a total density of large-pit defects caused by micropipes in the substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, is 1 defect/cm2 or less.

公开(公告)号：US20190144995A1

公开(公告)日：2019-05-16

申请号：US16175936

申请日：2018-10-31

申请人： SHOWA DENKO K.K.

发明人： Naoto ISHIBASHI ,  Keisuke FUKADA ,  Yoshikazu UMETA ,  Tomohiro KODAMA

IPC分类号： C23C16/44 ,  C23C16/32 ,  C30B25/14

摘要： A chemical vapor deposition apparatus is provided which comprises a reaction furnace in which vapor deposition is performed and an exhaust pipe which discharges a gas from an interior of the reaction furnace, wherein the exhaust pipe includes at least one of a bending part, and the bending part includes at least one of a pipe-extension part, and the pipe-extension part extends from the bending part and has a storage space in the pipe-extension part.

公开(公告)号：US20190316273A1

公开(公告)日：2019-10-17

申请号：US16471784

申请日：2017-12-11

申请人： SHOWA DENKO K.K.

发明人： Naoto ISHIBASHI ,  Keisuke FUKADA ,  Akira BANDOH

IPC分类号： C30B29/36 ,  C30B25/02

摘要： A method of producing a p-type SiC epitaxial wafer, the method including: a step of setting an input raw material C/Si ratio, being a ratio between the C element and the Si element in a feedstock gas; and a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×1018 cm−3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, wherein the input raw material C/Si ratio is set based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, the input raw material C/Si ratio differs from the total gas C/Si ratio, and the input raw material C/Si ratio is 0.8 or less.

公开(公告)号：US20190161886A1

公开(公告)日：2019-05-30

申请号：US16196212

申请日：2018-11-20

申请人： SHOWA DENKO K.K.

发明人： Yasunori MOTOYAMA ,  Yoshishige OKUNO ,  Yoshikazu UMETA ,  Keisuke FUKADA

IPC分类号： C30B25/12 ,  C30B25/10 ,  C30B29/36 ,  C23C16/32 ,  C23C16/46 ,  C23C16/458

摘要： A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; and a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor, in which an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.

公开(公告)号：US20190148496A1

公开(公告)日：2019-05-16

申请号：US16152971

申请日：2018-10-05

申请人： SHOWA DENKO K.K.

发明人： Naoto ISHIBASHI ,  Keisuke FUKADA

IPC分类号： H01L29/16 ,  H01L29/06 ,  H01L21/02 ,  H01L29/04

摘要： An SiC epitaxial wafer according to the present invention includes: an SiC single crystal substrate; and a carrier concentration variation layer disposed on one face side of the SiC single crystal substrate, wherein the carrier concentration variation layer includes: high concentration layers in which carrier concentrations thereof are higher than carrier concentrations of adjacent layers; and low concentration layers in which carrier concentrations are lower than in adjacent layers, and the high concentration layers and the low concentration layers are laminated alternately.

公开(公告)号：US20200083085A1

公开(公告)日：2020-03-12

申请号：US16559844

申请日：2019-09-04

申请人： SHOWA DENKO K.K.

发明人： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Yoshikazu UMETA ,  Hironori ATSUMI

IPC分类号： H01L21/687 ,  C23C16/458 ,  H01L21/02

摘要： A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.

公开(公告)号：US20190161885A1

公开(公告)日：2019-05-30

申请号：US16196246

申请日：2018-11-20

申请人： SHOWA DENKO K.K.

发明人： Yasunori MOTOYAMA ,  Yoshishige OKUNO ,  Yoshikazu UMETA ,  Keisuke FUKADA

IPC分类号： C30B25/10 ,  C23C16/46

摘要： A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.

公开(公告)号：US20200181798A1

公开(公告)日：2020-06-11

申请号：US16705848

申请日：2019-12-06

申请人： SHOWA DENKO K.K.

发明人： Yuichiro MABUCHI ,  Keisuke FUKADA

IPC分类号： C30B25/12 ,  C23C16/458 ,  C23C16/46 ,  C30B29/36 ,  C23C16/32 ,  H01L21/687

摘要： A susceptor, including: a base portion having a first surface on which a wafer is placed, in which the base portion has a plurality of openings which penetrate through the base portion in a thickness direction and supply an Ar gas to a back surface of the wafer.