公开(公告)号：US20200083330A1

公开(公告)日：2020-03-12

申请号：US16616780

申请日：2018-04-19

申请人： SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

发明人： Keisuke FUKADA ,  Naoto ISHIBASHI ,  Akira BANDO ,  Masahiko ITO ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Kazukuni HARA ,  Masami NAITO ,  Hideyuki UEHIGASHI ,  Hiroaki FUJIBAYASHI ,  Hirofumi AOKI ,  Toshikazu SUGIURA ,  Katsumi SUZUKI

IPC分类号： H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

摘要： A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US20190386131A1

公开(公告)日：2019-12-19

申请号：US16304752

申请日：2017-06-29

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi TAKEUCHI ,  Katsumi SUZUKI ,  Yukihiko WATANABE

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/10 ,  H01L21/02 ,  H01L21/04 ,  H01L21/761 ,  H01L29/66

摘要： All of intervals between adjacent p type guard rings are set to be equal to or less than an interval between p type deep layers. As a result, the interval between the p type guard rings becomes large, i.e., the trenches are formed sparsely, so that the p type layer is prevented from being formed thick at the guard ring portion when the p type layer is epitaxially grown. Therefore, by removing the p type layer in the cell portion at the time of the etch back process, it is possible to remove the p type layer without leaving any residue in the guard ring portion. Therefore, when forming the p type deep layer, the p type guard ring and the p type connection layer by etching back the p type layer, the residue of the p type layer is restricted from remaining in the guard ring portion.

公开(公告)号：US20190386096A1

公开(公告)日：2019-12-19

申请号：US16305164

申请日：2017-06-29

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi TAKEUCHI ,  Shinichiro MIYAHARA ,  Atsuya AKIBA ,  Katsumi SUZUKI ,  Yukihiko WATANABE

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L29/872 ,  H01L29/66

摘要： A top end of the p type connection layer is connected to the p type extension region. By forming such a p type extension region, it becomes possible to eliminate a region where an interval becomes large between the p type connection layer and the p type guard ring. Therefore, in the mesa portion, it is possible to prevent the equipotential line from excessively rising up, and it is possible to secure the withstand voltage.

公开(公告)号：US20190181239A1

公开(公告)日：2019-06-13

申请号：US16278314

申请日：2019-02-18

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Akira AMANO ,  Takayuki SATOMURA ,  Yuichi TAKEUCHI ,  Katsumi SUZUKI ,  Sachiko AOI

IPC分类号： H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L21/265

摘要： When a film thickness of a second epitaxial film is measured, an infrared light is irradiated from a surface side of the second epitaxial film onto a base layer on which a first epitaxial film and the second epitaxial film are formed. A reflected light from an interface between the first epitaxial film and the base layer and a reflected light from a surface of the second epitaxial film are measured to obtain a two-layer film thickness, which is a total film thickness of the first epitaxial film and the second epitaxial film. The film thickness of the second epitaxial film is calculated by subtracting a one-layer film thickness, which is a film thickness of the first epitaxial film, from the two-layer film thickness.

公开(公告)号：US20200381313A1

公开(公告)日：2020-12-03

申请号：US16997210

申请日：2020-08-19

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Akira AMANO ,  Takayuki SATOMURA ,  Yuichi TAKEUCHI ,  Katsumi SUZUKI ,  Sachiko AOI

IPC分类号： H01L21/66 ,  H01L29/78 ,  G01B11/06 ,  H01L29/12 ,  H01L21/265 ,  H01L29/16 ,  H01L29/66

摘要： When a film thickness of a second epitaxial film is measured, an infrared light is irradiated from a surface side of the second epitaxial film onto a base layer on which a first epitaxial film and the second epitaxial film are formed. A reflected light from an interface between the first epitaxial film and the base layer and a reflected light from a surface of the second epitaxial film are measured to obtain a two-layer film thickness, which is a total film thickness of the first epitaxial film and the second epitaxial film. The film thickness of the second epitaxial film is calculated by subtracting a one-layer film thickness, which is a film thickness of the first epitaxial film, from the two-layer film thickness.

公开(公告)号：US20190214264A1

公开(公告)日：2019-07-11

申请号：US16353670

申请日：2019-03-14

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Shigeyuki TAKAGI ,  Masaki SHIMOMURA ,  Yuichi TAKEUCHI ,  Katsumi SUZUKI ,  Sachiko AOI

IPC分类号： H01L21/3065 ,  H01L29/10 ,  H01L29/66 ,  H01L29/872 ,  H01L29/78 ,  H01L29/16 ,  H01L23/544 ,  H01L21/02 ,  H01L21/311

摘要： In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of silicon carbide and on which a base layer is formed is prepared, a trench is provided in the base layer, a silicon carbide layer is epitaxially formed on a surface of the base layer while filling the trench with the silicon carbide layer, the sacrificial layer is planarized by reflow after forming the sacrificial layer, and the silicon carbide layer is etched back together with the planarized sacrificial layer by dry etching under an etching condition in which an etching selectivity of the silicon carbide layer to the sacrificial layer is 1.

公开(公告)号：US20170040441A1

公开(公告)日：2017-02-09

申请号：US15101165

申请日：2014-12-22

申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

发明人： Sachiko AOI ,  Yukihiko WATANABE ,  Katsumi SUZUKI ,  Naohiro SUZUKI

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16

CPC分类号： H01L29/7397 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

摘要： A resurf layer and a guard ring are formed in a peripheral region in a position at the surface of the semiconductor substrate. The guard ring is formed more deeply than the resurf layer. When the guard ring is shallow and the impurity concentration of the resurf layer is low, the potential distribution at the deep portion of the resurf layer becomes unstable, and the resurf layer does not sufficiently exhibit the effect of improving the withstand voltage. When the guard ring is deep, the impurity concentration of the guard ring is high, the potential distribution at the deep portion of the resurf layer is regulated by the guard ring and the resurf layer sufficiently exhibits the effect of improving the withstand voltage.

摘要翻译： 在半导体基板的表面的位置的周边区域形成有再生层和保护环。 护环形成得比修复层更深。 当保护环较浅并且复合层的杂质浓度低时，再生层深部的电位分布变得不稳定，并且再生层不能充分发挥提高耐电压的效果。 当保护环较深时，保护环的杂质浓度高，再生层深处的电位分布由保护环调节，再生层充分发挥提高耐电压的效果。

公开(公告)号：US20190035883A1

公开(公告)日：2019-01-31

申请号：US16069927

申请日：2017-01-19

申请人： DENSO CORPORATION

发明人： Yuichi TAKEUCHI ,  Atsuya AKIBA ,  Katsumi SUZUKI ,  Yusuke YAMASHITA

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04

摘要： A method for manufacturing a compound semiconductor device includes: providing a semiconductor substrate that includes a foundation layer; forming a deep trench in the foundation layer; and filling the deep trench with a deep layer having a second conductive type and a limiting layer having the first conductive type. In the filling the deep trench, growth of the deep layer from a bottom of the deep trench toward an opening inlet of the deep trench and growth of the limiting layer from a side face of the deep trench are achieved by: dominant epitaxial growth of a second conductive type layer over a first conductive type layer on the bottom of the deep trench; and dominant epitaxial growth of the first conductive type layer over the second conductive type layer on the side face of the deep trench, based on plane orientation dependency of the compound semiconductor during epitaxial growth.

公开(公告)号：US20190013392A1

公开(公告)日：2019-01-10

申请号：US16069622

申请日：2017-01-19

申请人： DENSO CORPORATION

发明人： Yuichi TAKEUCHI ,  Katsumi SUZUKI ,  Yusuke YAMASHITA

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L29/78

CPC分类号： H01L29/66068 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262 ,  H01L29/1608 ,  H01L29/7813

摘要： A method for manufacturing a compound semiconductor device includes causing epitaxial growth of a p-type impurity layer containing a compound semiconductor on a foundation layer containing the compound semiconductor. The causing the epitaxial growth includes performing pre-doping to preliminarily introduce dopant gas before introducing material gas for the epitaxial growth of the compound semiconductor. The dopant gas contains an organic metal material providing dopant of p-type impurities. An impurity concentration profile of the p-type impurity layer is controlled by controlling a time of the pre-doping.

公开(公告)号：US20190386094A1

公开(公告)日：2019-12-19

申请号：US16304783

申请日：2017-06-29

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi TAKEUCHI ,  Shuhei MITANI ,  Katsumi SUZUKI ,  Yusuke YAMASHITA

IPC分类号： H01L29/06 ,  H01L29/872 ,  H01L29/10 ,  H01L29/08 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66

摘要： The width of the p type guard ring is set to match the interval between the adjacent p type guard rings, and the width of the p type guard ring is made larger as the interval between the p type guard rings becomes larger. The width of the frame portion is basically equal to the width of the p type deep layer so that the interval between the frame portions is equal to the interval between the p type deep layers. This makes it possible to reduce the difference in formation areas of the trenches per unit area in the cell portion, the connection portion and the guard ring portion. Therefore, when the p type layer is formed, the difference in the amount of the p type layer embedding into the trenches per unit area also decreases and the thickness of the p type layer is equalized.