公开(公告)号：US20150099335A1

公开(公告)日：2015-04-09

申请号：US14048282

申请日：2013-10-08

Applicant: STMicroelectronics, Inc.

Inventor： Qing LIU ,  Nicolas LOUBET

IPC: H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/823878 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/0924 ,  H01L27/1203

Abstract: A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes forming laterally adjacent first and second active regions in a semiconductor layer of a silicon-on-insulator (SOI) wafer. A stress inducing layer is formed above the first active region to impart stress thereto. Trench isolation regions are formed bounding the first active region and adjacent portions of the stress inducing layer. The stress inducing layer is removed leaving the trench isolation regions to maintain stress imparted to the first active region.

Abstract translation: 用于形成互补金属氧化物半导体（CMOS）半导体器件的方法包括在绝缘体上硅（SOI）晶片的半导体层中形成横向相邻的第一和第二有源区。 应力诱导层形成在第一有源区上方以赋予应力。 沟槽隔离区形成为包围应力诱导层的第一有源区和相邻部分。 去除应力诱导层，离开沟槽隔离区域以保持赋予第一有源区域的应力。

公开(公告)号：US20200295187A1

公开(公告)日：2020-09-17

申请号：US16886193

申请日：2020-05-28

Applicant: STMICROELECTRONICS, INC.

Inventor： Qing LIU ,  John H. ZHANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/165 ,  H01L29/267 ,  H01L29/739 ,  H01L27/092

Abstract: A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

公开(公告)号：US20160013206A1

公开(公告)日：2016-01-14

申请号：US14771016

申请日：2013-02-28

Applicant: COMMISSARIAT Á L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  STMICROELECTRONICS, INC.

Inventor： Maud VINET ,  Kangguo CHENG ,  Bruce DORIS ,  Laurent GRENOUILLET ,  Ali KHAKIFIROOZ ,  Yannick LE TIEC ,  Qing LIU

IPC: H01L27/12 ,  H01L21/265 ,  H01L27/092 ,  H01L21/84 ,  H01L21/762 ,  H01L29/06 ,  H01L21/223

CPC classification number: H01L27/1203 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/76229 ,  H01L21/76237 ,  H01L21/823878 ,  H01L21/823892 ,  H01L21/84 ,  H01L27/0928 ,  H01L29/0649

Abstract: An integrated circuit, including: a UTBOX layer; a first cell, including: FDSOI transistors; a first STI separating the transistors; a first ground plane located beneath one of the transistors and beneath the UTBOX layer; a first well; a second cell, including: FDSOI transistors; a second STI separating the transistors; a second ground plane located beneath one of the transistors and beneath the UTBOX layer; a second well; a third STI separating the cells, reaching the bottom of the first and second wells; a deep well extending continuously beneath the first and second wells, having a portion beneath the third STI whose doping density is at least 50% higher than the doping density of the deep well beneath the first and second STIs.

Abstract translation: 一种集成电路，包括：UTBOX层; 第一个电池，包括：FDSOI晶体管; 分离晶体管的第一STI; 位于一个晶体管下方并位于UTBOX层之下的第一接地平面; 第一口井 第二个电池，包括：FDSOI晶体管; 分离晶体管的第二STI; 位于一个晶体管下方并位于UTBOX层之下的第二接地平面; 第二口井 分离细胞的第三STI，到达第一和第二孔的底部; 连续地在第一和第二阱下方延伸的深阱，具有在第三STI下面的部分，其掺杂密度比第一和第二STI下面的深井的掺杂密度高至少50％。

公开(公告)号：US20160013205A1

公开(公告)日：2016-01-14

申请号：US14771025

申请日：2013-02-28

Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  STMICROELECTRONICS, INC.

Inventor： Maud VINET ,  Kangguo CHENG ,  Bruce DORIS ,  Laurent GRENOUILLET ,  Ali KHAKIFIROOZ ,  Yannick LE TIEC ,  Qing LIU

IPC: H01L27/12 ,  H01L21/84 ,  H01L21/8238 ,  H01L29/06

CPC classification number: H01L27/12 ,  H01L21/762 ,  H01L21/823878 ,  H01L21/823892 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1207 ,  H01L29/0649 ,  H01L29/0653

Abstract: An integrated circuit, including: a first cell, including: FDSOI transistors; a UTBOX layer lying beneath the transistors; a first well lying beneath the insulator layer and beneath the transistors, the first well having a first type of doping; a first ground plane having a second type of doping, located beneath one of the transistors and between the insulator layer and the first well; a first STI separating the transistors and crossing the insulator layer; a first conductive element forming an electrical connection between the first well and the first ground plane, located under the first STI; a second cell including a second well; a second STI separating the cells, crossing the insulator layer and reaching the bottom of the first and second wells.

Abstract translation: 一种集成电路，包括：第一单元，包括：FDSOI晶体管; 位于晶体管下方的UTBOX层; 第一阱位于绝缘体层之下并位于晶体管下方，第一阱具有第一类掺杂; 具有第二类型掺杂的第一接地平面，位于所述晶体管中的一个之下且在所述绝缘体层和所述第一阱之间; 分离晶体管并与绝缘体层交叉的第一STI; 第一导电元件，其形成位于第一STI之下的第一阱和第一接地平面之间的电连接; 包括第二井的第二池; 分离所述电池的第二STI，穿过所述绝缘体层并到达所述第一和第二阱的底部。

公开(公告)号：US20150349085A1

公开(公告)日：2015-12-03

申请号：US14288766

申请日：2014-05-28

Applicant: STMICROELECTRONICS, INC. ,  GLOBALFOUNDRIES Inc. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing LIU ,  Ruilong XIE ,  Xiuyu CAI ,  Chun-chen YEH

IPC: H01L29/66 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31105 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/785 ,  H01L29/7851

Abstract: A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate. At least one dielectric layer is formed adjacent an end portion of the semiconductor fins and within the space between adjacent semiconductor fins. A pair of sidewall spacers is formed adjacent outermost semiconductor fins at the end portion of the semiconductor fins. The at least one dielectric layer and end portion of the semiconductor fins between the pair of sidewall spacers are removed. Source/drain regions are formed between the pair of sidewall spacers.

Abstract translation: 制造半导体器件的方法包括在衬底上形成横向间隔开的半导体鳍片。 在半导体鳍片的端部附近和相邻的半导体鳍片之间的空间内形成至少一个电介质层。 在半导体翅片的端部处邻近最外半导体翅片形成一对侧壁间隔物。 去除该对侧壁间隔物之间​​的至少一个电介质层和半导体翅片的端部。 源极/漏极区域形成在该对侧壁间隔物之间​​。

公开(公告)号：US20150333155A1

公开(公告)日：2015-11-19

申请号：US14281021

申请日：2014-05-19

Applicant: STMICROELECTRONICS, INC. ,  GLOBALFOUNDRIES INC ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing LIU ,  RUILONG XIE ,  XIUYU CAI ,  CHUN-CHEN YEH ,  KEJIA WANG

IPC: H01L29/66 ,  H01L27/088

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/6656

Abstract: A method for making a semiconductor device may include forming first and second spaced apart semiconductor active regions with an insulating region therebetween, forming at least one sacrificial gate line extending between the first and second spaced apart semiconductor active regions and over the insulating region, and forming sidewall spacers on opposing sides of the at least one sacrificial gate line. The method may further include removing portions of the at least one sacrificial gate line within the sidewall spacers and above the insulating region defining at least one gate line end recess, filling the at least one gate line end recess with a dielectric material, and forming respective replacement gates in place of portions of the at least one sacrificial gate line above the first and second spaced apart semiconductor active regions.

Abstract translation: 制造半导体器件的方法可以包括：形成第一和第二间隔开的半导体有源区域，其间具有绝缘区域，形成在第一和第二间隔开的半导体有源区域之间并在绝缘区域上延伸的至少一个牺牲栅极线，以及形成 在所述至少一个牺牲栅极线的相对侧上的侧壁间隔物。 该方法还可以包括去除侧壁间隔物内的至少一个牺牲栅极线的部分，并且在绝缘区域的上方限定限定至少一个栅极端部凹部的部分，用电介质材料填充至少一个栅极端部凹部，并且形成相应的 替代栅极代替在第一和第二间隔开的半导体有源区之上的至少一个牺牲栅极线的部分。

公开(公告)号：US20190252551A1

公开(公告)日：2019-08-15

申请号：US16355398

申请日：2019-03-15

Applicant: STMICROELECTRONICS, INC.

Inventor： Qing LIU ,  John H. Zhang

IPC: H01L29/788 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L29/7883 ,  H01L27/088 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/7889

Abstract: A semi-floating gate transistor is implemented as a vertical FET built on a silicon substrate, wherein the source, drain, and channel are vertically aligned, on top of one another. Current flow between the source and the drain is influenced by a control gate and a semi-floating gate. Front side contacts can be made to each one of the source, drain, and control gate terminals of the vertical semi-floating gate transistor. The vertical semi-floating gate FET further includes a vertical tunneling FET and a vertical diode. Fabrication of the vertical semi-floating gate FET is compatible with conventional CMOS manufacturing processes, including a replacement metal gate process. Low-power operation allows the vertical semi-floating gate FET to provide a high current density compared with conventional planar devices.

公开(公告)号：US20180315850A1

公开(公告)日：2018-11-01

申请号：US16026663

申请日：2018-07-03

Applicant: STMicroelectronics, Inc.

Inventor： Qing LIU ,  John H. ZHANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/092 ,  H01L29/165 ,  H01L29/739 ,  H01L29/267 ,  H01L21/8238 ,  H01L29/16 ,  H01L21/8234 ,  H01L29/51 ,  H01L29/49

Abstract: A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

公开(公告)号：US20170012130A1

公开(公告)日：2017-01-12

申请号：US15273778

申请日：2016-09-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES, Inc. ,  STMICROELECTRONICS, INC.

Inventor： Xiuyu CAI ,  Qing LIU ,  Ruilong XIE ,  Chun-Chen YEH

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/02 ,  H01L21/8234

Abstract: A large area electrical contact for use in integrated circuits features a non-planar, sloped bottom profile. The sloped bottom profile provides a larger electrical contact area, thus reducing the contact resistance, while maintaining a small contact footprint. The sloped bottom profile can be formed by recessing an underlying layer, wherein the bottom profile can be crafted to have a V-shape, U-shape, crescent shape, or other profile shape that includes at least a substantially sloped portion in the vertical direction. In one embodiment, the underlying layer is an epitaxial fin of a FinFET. A method of fabricating the low-resistance electrical contact employs a thin etch stop liner for use as a hard mask. The etch stop liner, e.g., HfO2, prevents erosion of an adjacent gate structure during the formation of the contact.

Abstract translation: 用于集成电路的大面积电接触具有非平面，倾斜的底部轮廓。 倾斜的底部轮廓提供更大的电接触面积，从而降低接触电阻，同时保持小的接触足迹。 倾斜的底部轮廓可以通过凹陷下面的层来形成，其中底部轮廓可以被制造成具有V形，U形，月牙形或其它轮廓形状，其在垂直方向上至少包括基本上倾斜的部分 。 在一个实施例中，下层是FinFET的外延翅片。 制造低电阻电接触的方法采用用作硬掩模的薄蚀刻停止衬垫。 蚀刻停止衬垫，例如HfO 2，防止在形成接触期间相邻栅极结构的侵蚀。

公开(公告)号：US20160190317A1

公开(公告)日：2016-06-30

申请号：US14587655

申请日：2014-12-31

Applicant: STMICROELECTRONICS, INC. ,  GLOBALFOUNDRIES INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing LIU ,  Ruilong XIE ,  Chun-chen YEH ,  Xiuyu CAI

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/165 ,  H01L29/40 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7848 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/6681 ,  H01L29/7842 ,  H01L29/7851

Abstract: A hetero-channel FinFET device provides enhanced switching performance over a FinFET device having a silicon channel, and is easier to integrate into a fabrication process than is a FinFET device having a germanium channel. A FinFET device featuring the heterogeneous Si/SiGe channel includes a fin having a central region made of silicon and sidewall regions made of SiGe. A hetero-channel pFET device in particular has higher carrier mobility and less gate-induced drain leakage current than either a silicon device or a SiGe device. The hetero-channel FinFET permits the SiGe portion of the channel to have a Ge concentration in the range of about 25-40% and permits the fin height to exceed 40 nm while remaining stable.

Abstract translation: 异构沟道FinFET器件在具有硅沟道的FinFET器件上提供增强的开关性能，并且比具有锗通道的FinFET器件更容易集成到制造工艺中。 具有异质Si / SiGe沟道的FinFET器件包括具有由硅构成的中心区域和由SiGe制成的侧壁区域的翅片。 异质沟道pFET器件特别地具有比硅器件或SiGe器件更高的载流子迁移率和更小的栅极引起漏极漏电流。 异质沟道FinFET允许沟道的SiGe部分的Ge浓度在约25-40％的范围内，并且允许翅片高度超过40nm，同时保持稳定。