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    METHOD FOR PRODUCING A HIGH-VOLTAGE TRANSISTOR WITH REDUCED FOOTPRINT, AND CORRESPONDING INTEGRATED CIRCUIT
    12.
    发明申请
    METHOD FOR PRODUCING A HIGH-VOLTAGE TRANSISTOR WITH REDUCED FOOTPRINT, AND CORRESPONDING INTEGRATED CIRCUIT 审中-公开
    用于生产具有降低功率的高电压晶体管的方法和相应的集成电路

    公开(公告)号：US20170012104A1

    公开(公告)日：2017-01-12

    申请号：US15068732

    申请日：2016-03-14

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Julien Delalleau ,  Christian Rivero

    IPC: H01L29/423 ,  H01L21/306 ,  H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/4236 ,  H01L21/02236 ,  H01L21/28167 ,  H01L21/30604 ,  H01L21/31111 ,  H01L29/0847 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/78

    Abstract: An integrated MOS transistor is formed in a substrate. The transistor includes a gate region buried in a trench of the substrate. The gate region is surrounded by a dielectric region covering internal walls of the trench. A source region and drain region are situated in the substrate on opposite sides of the trench. The dielectric region includes an upper dielectric zone situated at least partially between an upper part of the gate region and the source and drain regions. The dielectric region further includes a lower dielectric zone that is less thick than the upper dielectric zone and is situated between a lower part of the gate region and the substrate.

    Abstract translation: 在基板中形成集成的MOS晶体管。 晶体管包括掩埋在衬底的沟槽中的栅极区域。 栅极区域被覆盖沟槽内壁的电介质区域围绕。 源极区域和漏极区域位于沟槽的相对侧上的衬底中。 电介质区域包括至少部分地位于栅极区域的上部与源极和漏极区域之间的上部电介质区域。 所述电介质区域还包括下部电介质区域，所述下部电介质区域比所述上部电介质区域厚，并且位于所述栅极区域的下部和所述衬底之间。

    Method for detecting electrical energy produced from a thermoelectric material contained in an integrated circuit
    13.
    发明授权
    Method for detecting electrical energy produced from a thermoelectric material contained in an integrated circuit 有权
    用于检测由集成电路中包含的热电材料产生的电能的方法

    公开(公告)号：US09331027B2

    公开(公告)日：2016-05-03

    申请号：US13959496

    申请日：2013-08-05

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Pascal Fornara ,  Christian Rivero

    IPC: H01L23/34 ,  H01L23/00

    CPC classification number: H01L23/576 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy when exposed to a temperature gradient. This material can be used, for example, in a method for detecting the repackaging of the integrated circuit after it has been originally packaged.

    Abstract translation: 集成电路包括设置在半导体主体的表面的有源电路和设置在半导体主体上方的互连区域。 热电材料设置在互连区域的远离半导体本体的上部。 热电材料被配置为当暴露于温度梯度时传递电能。 该材料可以用于例如在最初封装集成电路的重新包装检测方法之后。

    Electrically Controllable Integrated Switch
    14.
    发明申请
    Electrically Controllable Integrated Switch 审中-公开
    电控集成开关

    公开(公告)号：US20160107886A1

    公开(公告)日：2016-04-21

    申请号：US14985083

    申请日：2015-12-30

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Christian Rivero ,  Pascal Fornara ,  Antonio di-Giacomo ,  Brice Arrazat

    IPC: B81C1/00 ,  H01H57/00

    Abstract: Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

    Abstract translation: 提供了形成和操作开关装置的方法。 开关装置形成在互连中，互连包括多个金属化层，并且具有包括由结构保持的梁的组件。 梁和结构位于相同的金属化水平内。 布置结构在梁上的固定位置，以便为梁定义位于这些固定位置之间的枢转点。 该结构在不存在电位差的情况下相对于光束和垂直于光束的平面基本对称。 在存在施加在结构的第一部分之间的第一电位差并且在存在施加在结构的第二部分之间的第二电位差的情况下在第二方向上枢转时，梁能够在第一方向上枢转。

    Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses
    15.
    发明授权
    Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses 有权
    集成电路包括具有松弛压缩应力的有源区域的元件，例如NMOS晶体管

    公开(公告)号：US09269771B2

    公开(公告)日：2016-02-23

    申请号：US14627281

    申请日：2015-02-20

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Christian Rivero ,  Guilhem Bouton ,  Pascal Fornara

    IPC: H01L29/10 ,  H01L29/06 ,  H01L21/762 ,  H01L21/763 ,  H01L29/78

    CPC classification number: H01L29/1083 ,  H01L21/76224 ,  H01L21/763 ,  H01L27/11293 ,  H01L29/0649 ,  H01L29/78 ,  H01L29/7846

    Abstract: An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.

    Abstract translation: 集成电路包括衬底和至少一个对压缩应力非常敏感的部件，其至少部分地布置在由绝缘区域限制的衬底的有源区域内。 为了解决有源区域中的压缩应力，电路还包括位于至少绝缘区域中的至少一个电惰性沟槽，并且包含被配置为减小有源区域中的压缩应力的内部区域。 内部填充多晶硅。 多晶硅填充沟槽可以进一步延伸穿过绝缘区域并进入衬底。

    METHOD OF COMPENSATING FOR EFFECTS OF MECHANICAL STRESSES IN A MICROCIRCUIT
    16.
    发明申请
    METHOD OF COMPENSATING FOR EFFECTS OF MECHANICAL STRESSES IN A MICROCIRCUIT 审中-公开
    补偿机械应力在微型计算机中的影响的方法

    公开(公告)号：US20150346275A1

    公开(公告)日：2015-12-03

    申请号：US14824893

    申请日：2015-08-12

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Pascal Fornara ,  Christian Rivero

    IPC: G01R31/28

    CPC classification number: G01R31/2872 ,  G01L1/00 ,  G01L1/005 ,  G01L1/148 ,  G01L1/225 ,  G01L1/2293 ,  G01L11/00 ,  G01L25/00 ,  G01R31/2884 ,  H01L27/06 ,  H01L29/66007

    Abstract: A method for manufacturing an integrated circuit includes forming in a substrate a measuring circuit sensitive to mechanical stresses and configured to supply a measurement signal representative of mechanical stresses exerted on the measuring circuit. The measuring circuit is positioned such that the measurement signal is also representative of mechanical stresses exerted on a functional circuit of the integrated circuit. A method of using the integrated circuit includes determining from the measurement signal the value of a parameter of the functional circuit predicted to mitigate an impact of the variation in mechanical stresses on the operation of the functional circuit, and supplying the functional circuit with the determined value of the parameter.

    Abstract translation: 一种用于制造集成电路的方法包括在基板上形成对机械应力敏感的测量电路，并且被配置为提供表示施加在测量电路上的机械应力的测量信号。 测量电路被定位成使得测量信号也代表施加在集成电路的功能电路上的机械应力。 使用集成电路的方法包括从测量信号确定预测的功能电路的参数的值，以减轻机械应力的变化对功能电路的操作的影响，以及向功能电路提供确定的值 的参数。

    Integrated Mechanical Device for Electrical Switching
    18.
    发明申请
    Integrated Mechanical Device for Electrical Switching 有权
    集成电气开关机械装置

    公开(公告)号：US20130146873A1

    公开(公告)日：2013-06-13

    申请号：US13687932

    申请日：2012-11-28

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Pascal Fornara ,  Christian Rivero ,  Antonio di-Giacomo

    IPC: B81B3/00 ,  H01L23/58

    CPC classification number: H01H37/52 ,  B81B3/0024 ,  G01K3/005 ,  G01K5/486 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations.

    Abstract translation: 一种集成电路，包括用于电开关的机械装置，包括可热变形的第一组件，并且具有通过至少两个臂保持在至少两个不同位置处的梁，所述梁和所述臂是金属并且设置在相同的金属化水平内，以及 还包括至少一个导电体。 第一组件具有在第一温度下的第一构型和在与第一温度不同的第二温度下的第二构型。 在与另一种结构中的身体接触的一种结构中，光束与导电体脱离接触。 光束建立或断开通过所述至少一个导电体并通过所述光束的不同构造的电连接。

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