公开(公告)号：US10700220B2

公开(公告)日：2020-06-30

申请号：US16228483

申请日：2018-12-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/107 ,  H01L31/0216 ,  H01L27/146 ,  G01J1/44 ,  H01L27/144 ,  H01L31/02

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US10483298B2

公开(公告)日：2019-11-19

申请号：US15583750

申请日：2017-05-01

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Alfio Russo

IPC: H01L27/00 ,  H01L31/0216 ,  G01N21/85 ,  H01L27/144 ,  G01N21/31 ,  G01N21/05 ,  H01L31/18 ,  G01N21/61 ,  H01L31/00 ,  H01L31/0312 ,  H01L31/103 ,  H01L31/108 ,  G01N21/33 ,  G01M15/10

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

公开(公告)号：US10461209B2

公开(公告)日：2019-10-29

申请号：US15140880

申请日：2016-04-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US10416142B2

公开(公告)日：2019-09-17

申请号：US15782626

申请日：2017-10-12

Applicant: STMicroelectronics S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: H01L31/103 ,  H01L31/101 ,  H01L31/0232 ,  H01L31/02 ,  H01L27/144 ,  G01N33/00 ,  G01N27/414 ,  G01N21/84 ,  G01N21/33 ,  G01N21/31 ,  G01N21/25

Abstract: An optoelectronic device for detecting volatile organic compounds is described, including a die with a semiconductor body, the die forming a MOSFET transistor and at least one photodiode. The optoelectronic device is optically couplable to an optical source that emits radiation with a spectrum at least partially overlapping the absorption spectrum range of the semiconductor body. The MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor can be biased to generate an electrical signal indicating the overall concentration of the gas mixture. The photodiode generates a photocurrent that is a function of the concentration of one or more polycyclic aromatic hydrocarbons present in the gas mixture.

公开(公告)号：US10205036B2

公开(公告)日：2019-02-12

申请号：US15868929

申请日：2018-01-11

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/107 ,  H01L31/0216 ,  G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L27/146

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US09899544B1

公开(公告)日：2018-02-20

申请号：US15449655

申请日：2017-03-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/07 ,  H01L31/0216 ,  H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US20180033895A1

公开(公告)日：2018-02-01

申请号：US15449655

申请日：2017-03-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/0216 ,  G01J1/44 ,  H01L31/02 ,  H01L27/144 ,  H01L31/107

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US20170314989A1

公开(公告)日：2017-11-02

申请号：US15375741

申请日：2016-12-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: G01J1/42 ,  H01L31/107 ,  H01L31/0352 ,  H01L31/0312 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/02 ,  G01J5/00 ,  H01L31/18 ,  F23N5/08

CPC classification number: G01J1/429 ,  F23N5/082 ,  G01J5/0014 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14669 ,  H01L27/1467 ,  H01L31/02027 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/1035 ,  H01L31/107 ,  H01L31/1812

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

公开(公告)号：US09685575B2

公开(公告)日：2017-06-20

申请号：US14640663

申请日：2015-03-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/101 ,  H01L31/108

CPC classification number: H01L31/1013 ,  H01L31/022416 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/108 ,  H01L31/11 ,  H01L31/1812

Abstract: A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

公开(公告)号：US12166141B2

公开(公告)日：2024-12-10

申请号：US17719205

申请日：2022-04-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L21/74 ,  H01L29/06 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/107 ,  H01L31/18 ,  H01L27/144 ,  H01L27/146

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.