Electronic switching device with reduction of leakage currents and corresponding control method

    公开(公告)号:US10230363B2

    公开(公告)日:2019-03-12

    申请号:US15490356

    申请日:2017-04-18

    Abstract: A method is used to control an electronic device that includes a switching unit having a main MOS transistor having a substrate, a first conducting electrode and a second conducting electrode coupled to an output terminal. The method includes controlling the main transistor in such a way as to put it into an on state or an off state such that, when the main transistor is in the on state, the substrate and the first conducting electrode of the main transistor are connected to an input terminal and, when the main transistor is in the off state, the first conducting electrode of the main transistor is isolated from the input terminal and a first bias voltage is applied to the first conducting electrode and a second bias voltage is applied to the substrate of the main transistor.

    Method and Device for Controlling a Sample and Hold Circuit
    12.
    发明申请
    Method and Device for Controlling a Sample and Hold Circuit 有权
    用于控制采样和保持电路的方法和装置

    公开(公告)号:US20150155053A1

    公开(公告)日:2015-06-04

    申请号:US14549291

    申请日:2014-11-20

    Abstract: A method is provided for controlling a sample and hold circuit that includes a switching module coupled to a storage capacitor. A circuit external to the sample and hold circuit of generates at least one main current representative of at least one leakage current of the switching module in its off state. The at least one main current is delivered to at least one auxiliary capacitor. An initial pulse signal is generated from the charging and discharging of the at least one auxiliary capacitor. The sampling phase of the sample and hold circuit is triggered at the rate of the pulses of a pulse signal derived from the initial pulse signal.

    Abstract translation: 提供了一种用于控制采样和保持电路的方法,该采样和保持电路包括耦合到存储电容器的开关模块。 采样和保持电路外部的电路产生代表切换模块处于其关闭状态的至少一个泄漏电流的至少一个主电流。 至少一个主电流被传送到至少一个辅助电容器。 从至少一个辅助电容器的充电和放电产生初始脉冲信号。 采样和保持电路的采样相位以从初始脉冲信号得到的脉冲信号脉冲的速率被触发。

    Enhanced Temperature Sensor
    13.
    发明申请

    公开(公告)号:US20220163408A1

    公开(公告)日:2022-05-26

    申请号:US17452224

    申请日:2021-10-25

    Abstract: A calibration method of a temperature sensor is provided. The temperature sensor having a current source and a ring oscillator generating a square pulse signal with a temperature-dependent square pulse frequency. The acquisition of a first square pulse frequency measurement at a first temperature from the square pulse signal forms a first measurement point. A second square pulse frequency measurement at a second temperature from the second square pulse signal forms a second measurement point. The determination of the relation data being representative of an affine relation between square pulse frequency measurements and temperatures. The affine relation being defined by a used proportionality coefficient modified with respect to a measured proportionality coefficient of a measured affine relation linking the first measurement point and the second measurement point.

    Electronic Switching Device with Reduction of Leakage Currents and Corresponding Control Method

    公开(公告)号:US20170222639A1

    公开(公告)日:2017-08-03

    申请号:US15490356

    申请日:2017-04-18

    CPC classification number: H03K17/161 G11C27/024 H03K3/012 H03K17/6872

    Abstract: A method is used to control an electronic device that includes a switching unit having a main MOS transistor having a substrate, a first conducting electrode and a second conducting electrode coupled to an output terminal. The method includes controlling the main transistor in such a way as to put it into an on state or an off state such that, when the main transistor is in the on state, the substrate and the first conducting electrode of the main transistor are connected to an input terminal and, when the main transistor is in the off state, the first conducting electrode of the main transistor is isolated from the input terminal and a first bias voltage is applied to the first conducting electrode and a second bias voltage is applied to the substrate of the main transistor.

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