公开(公告)号：US4365013A

公开(公告)日：1982-12-21

申请号：US287633

申请日：1981-07-28

申请人： Sachio Ishioka ,  Eiichi Maruyama ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Shinkichi Horigome

发明人： Sachio Ishioka ,  Eiichi Maruyama ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Shinkichi Horigome

IPC分类号： G03G5/08 ,  C23C14/14 ,  C23C14/35 ,  G03G5/082 ,  G03G5/14 ,  G03G5/147 ,  H01L31/08

CPC分类号： G03G5/08235 ,  G03G5/144 ,  G03G5/14704

摘要： Disclosed is an electrophotographic member having at least a supporter and a photoconductor layer formed mainly of amorphous silicon, characterized in that the amorphous silicon contains at least 50 atomic-% of silicon and at least 1 atomic-% of hydrogen as an average within the layer, and that a part which is at least 10 nm thick from a surface or/and interface of the photoconductor layer toward the interior of the photoconductor layer has a hydrogen content in a range of at least 1 atomic-% to at most 40 atomic-% and an optical forbidden band gap in a range of at least 1.3 eV to at most 2.5 eV and also has the property that an intensity of at least one of peaks having centers at wave numbers of approximately 2,200 cm.sup.-1, approximately 1,140 cm.sup.-1, approximately 1,040 cm.sup.-1, approximately 650 cm.sup.-1, approximately 860 cm.sup.-1 and approximately 800 cm.sup.-1 in an infrared absorption spectrum as are attributed to a bond between silicon and oxygen does not exceed 20% of a higher one of intensities of peaks having centers at wave numbers of approximately 2,000 cm.sup.-1 and approximately 2,100 cm.sup.-1 as are attributed to a bond between silicon and hydrogen. Dark decay characteristics are good, and a satisfactory surface potential can be secured. In addition, the characteristics are stable versus time.

摘要翻译： 公开了一种具有至少一种支撑体和主要由非晶硅形成的感光体层的电子照相构件，其特征在于，所述无定形硅含有至少50原子％的硅和至少1原子％的氢在该层内的平均值 并且从光电导体层的表面或/和界面朝向光电导体层的内部至少10nm厚的部分具有至少1原子％至至多40原子级的范围内的氢含量， 至少1.3eV至至多2.5eV的范围内的光学禁带宽度，并且还具有以波数约2,200cm-1为中心的至少一个峰的强度，约为1140cm- 在归因于硅和氧之间的键的红外吸收光谱中，约1,040cm -1，约650cm -1，约650cm -1，约860cm -1和约800cm -1不超过硅和氧之间的键的20％ 强度o f峰由于硅和氢之间的键而归因于波数约2,000cm -1和约2,100cm -1的中心。 暗衰变特性良好，可以确保令人满意的表面电位。 此外，特性与时间相比是稳定的。

公开(公告)号：US4556817A

公开(公告)日：1985-12-03

申请号：US547962

申请日：1983-11-02

申请人： Chushirou Kusano ,  Sachio Ishioka ,  Yoshinori Imamura ,  Yukio Takasaki ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Eiichi Maruyama

发明人： Chushirou Kusano ,  Sachio Ishioka ,  Yoshinori Imamura ,  Yukio Takasaki ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Eiichi Maruyama

IPC分类号： H01J29/45 ,  H01L31/02 ,  H01J31/26

CPC分类号： H01J29/456 ,  H01J29/45

摘要： An image pickup tube of high velocity electron beam scanning and negatively charging system having a target including, on a transparent substrate, at least a transparent conductive film, a photoconductive layer, a layer for emitting secondary electrons, and stripe electrodes. The transparent substrate may be made of amorphous silicon.

摘要翻译： 一种具有目标的高速电子束扫描和负电荷系统的图像拾取管，在透明基板上至少包括透明导电膜，光电导层，用于发射二次电子的层和条形电极。 透明基板可以由非晶硅制成。

公开(公告)号：US07411487B2

公开(公告)日：2008-08-12

申请号：US10542765

申请日：2004-01-20

申请人： Koji Takao ,  Tatehiko Yamada ,  Yoshinori Imamura

发明人： Koji Takao ,  Tatehiko Yamada ,  Yoshinori Imamura

IPC分类号： B60C23/02

CPC分类号： B60C23/0416 ,  B60C23/007 ,  B60C23/0437 ,  B60C23/044 ,  B60C23/0444 ,  B60C23/045

摘要： A tire-information administration system includes a plurality of sensor modules installed in tires; at least one reception module configured to receive data from the sensor modules; and a central control module configured to command the reception module to acquire data from the sensor modules. The central control module includes a predetermined number of connection ports for the reception module, assigned in advance to each sensor modules; and a specifically configured control means. The control means sequentially outputs at predetermined sampling time a command of data acquisition from a sensor module, to the connection port assigned to each sensor module; assigns the connection port to the sensor module for the next sampling, when there is a data input from the sensor module in response to the command; assigns data acquisition from the sensor module to another connection port, and assigns the other connection port to the sensor module for the next sampling, when there is no data input from the sensor module even by the command issuance. Thus, the tire-information administration system maintains communications even in case of troubles of the reception modules or damages of tires.

摘要翻译： 轮胎信息管理系统包括安装在轮胎中的多个传感器模块; 至少一个接收模块，被配置为从所述传感器模块接收数据; 以及中央控制模块，其被配置为命令所述接收模块从所述传感器模块获取数据。 中央控制模块包括用于接收模块的预定数量的连接端口，预先分配给每个传感器模块; 和具体配置的控制装置。 控制装置在预定的采样时间顺序地将从传感器模块获得数据的命令输出到分配给每个传感器模块的连接端口; 当传感器模块响应命令有数据输入时，将连接端口分配给传感器模块进行下一次采样; 将传感器模块的数据采集分配给另一个连接端口，并且即使通过命令发出也没有传感器模块的数据输入，也可以将其他连接端口分配给传感器模块进行下一个采样。 因此，轮胎信息管理系统即使在接收模块的故障或轮胎的损坏的情况下也保持通信。

公开(公告)号：US20070257332A1

公开(公告)日：2007-11-08

申请号：US11775716

申请日：2007-07-10

申请人： Atsushi KUROKAWA ,  Masao Yamane ,  Yoshinori Imamura

发明人： Atsushi KUROKAWA ,  Masao Yamane ,  Yoshinori Imamura

IPC分类号： H01L27/082

CPC分类号： H01L29/7371 ,  H01L29/1004 ,  H01L29/66318

摘要： A bipolar transistor having the enhanced characteristics is fabricated by etching a base mesa, which is formed below an emitter mesa (upper emitter layer) and a base electrode, to have jut regions on the edges of its generally rectangular region. A mask film, e.g., insulating film, is formed to cover the rectangular region and jut regions, and the base layer is etched by use of the insulating film for masking thereby to form a base mesa. Consequently, abnormal etching can be prevented from occurring along the base electrode and emitter mesa on the edges of the area where the base electrode and emitter mesa confront, and the increase of resistance between the base layer and the emitter layer can be prevented, whereby the bipolar transistor can have the enhanced characteristics.

摘要翻译： 具有增强特性的双极晶体管通过蚀刻形成在发射极台面（上部发射极层）和基底电极下方的基底台面而制成，以在其大致矩形区域的边缘上具有突起区域。 形成掩模膜例如绝缘膜以覆盖矩形区域和突起区域，并且通过使用用于掩蔽的绝缘膜来蚀刻基底层，从而形成基底台面。 因此，可以防止沿着基极和发射极台面所面对的区域的边缘上的基极和发射极台面发生异常蚀刻，并且可以防止基极层和发射极层之间的电阻的增加，由此 双极晶体管可以具有增强的特性。

公开(公告)号：US07256433B2

公开(公告)日：2007-08-14

申请号：US10833142

申请日：2004-04-28

申请人： Atsushi Kurokawa ,  Masao Yamane ,  Yoshinori Imamura

发明人： Atsushi Kurokawa ,  Masao Yamane ,  Yoshinori Imamura

IPC分类号： H01L29/739

CPC分类号： H01L29/7371 ,  H01L29/1004 ,  H01L29/66318

摘要： A bipolar transistor having enhanced characteristics is fabricated by etching a base mesa, which is formed below an emitter mesa (upper emitter layer) and a base electrode, so as to have jut regions on the edges of its generally rectangular region. A mask film, e.g., insulating film, is formed to cover the rectangular region and jut regions, and the base layer is etched by use of the insulating film as a mask to form a base mesa. Consequently, abnormal etching can be prevented from occurring along the base electrode and emitter mesa on the edges of the area where the base electrode and emitter mesa confront each other, and an increase in resistance between the base layer and the emitter layer can be prevented, whereby the bipolar transistor can have enhanced characteristics.

摘要翻译： 具有增强特性的双极晶体管通过蚀刻形成在发射极台面（上部发射极层）和基底电极下方的基底台面而制成，以便在其大致矩形区域的边缘上具有突起区域。 形成掩模膜例如绝缘膜以覆盖矩形区域和突起区域，并且通过使用绝缘膜作为掩模蚀刻基底层以形成基底台面。 因此，可以防止在基极和发射极台面彼此面对的区域的边缘上的基极和发射极台面发生异常蚀刻，并且可以防止基极层和发射极层之间的电阻的增加。 由此双极晶体管可以具有增强的特性。

公开(公告)号：US20060093015A1

公开(公告)日：2006-05-04

申请号：US10524262

申请日：2003-08-12

申请人： Eiji Ichihara ,  Yoshinori Imamura ,  Takehiko Yamada

发明人： Eiji Ichihara ,  Yoshinori Imamura ,  Takehiko Yamada

IPC分类号： G01K1/08

CPC分类号： B60C23/0408 ,  B60C23/20 ,  G01K13/08

摘要： There are provided a process and the like for judging a residual lifetime of a run-flat tire and an end stage of the residual lifetime thereof during continuous running at a run-flat state. The process for judging the residual lifetime of the tire of the invention is characterized in that in a vehicle equipped with a run-flat tire system comprising run-flat tires 2 and detection units 4 each arranged in the respective tire 2 and capable of measuring an atmosphere temperature in at least an interior 3 of the tire 2, when the tire 2 is continuously run at the run-flat state by an extreme lowering of an internal pressure accompanied with the occurrence of puncture or the like, after a limit temperature being statistically an occurrence of trouble is previously set, the atmosphere temperature inside tire of the run-flat tire continuously running at the run-flat state is measured, and a runnable time and/or distance until the run-flat tire results in trouble is predicted by using the atmosphere temperature inside tire measured and data calculated therefrom.

摘要翻译： 提供了一种用于在连续运行中的平坦状态下判断漏气保用轮胎的剩余寿命和剩余寿命的终止阶段的过程等。 用于判断本发明的轮胎的残余寿命的方法的特征在于，在配备有排气轮胎2和检测单元4的排气轮胎系统的车辆中，每个排气轮胎2和检测单元4分别布置在相应的轮胎2中并且能够测量 在轮胎2的至少内部3中的气氛温度，当轮胎2在极限温度为统计学上时，由于伴随着穿刺等的发生的内部压力的极度降低而在平坦状态下连续运行 预先设定故障的发生，测量在平坦状态下连续行驶的漏气保用轮胎的轮胎内的气氛温度，直到排气轮胎产生麻烦的运行时间和/或距离由 使用测量的轮胎内部的气氛温度和由此计算的数据。

公开(公告)号：US20060057789A1

公开(公告)日：2006-03-16

申请号：US11266259

申请日：2005-11-04

申请人： Atsushi Kurokawa ,  Toshiaki Kitahara ,  Hiroshi Inagawa ,  Yoshinori Imamura

发明人： Atsushi Kurokawa ,  Toshiaki Kitahara ,  Hiroshi Inagawa ,  Yoshinori Imamura

IPC分类号： H01L21/338

CPC分类号： H01L29/66143 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0652 ,  H01L27/0658 ,  H01L27/0664 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/66318 ,  H01L29/7371

摘要： The present invention achieves the enhancement of a manufacturing yield factor and the reduction of manufacturing cost in a manufacturing method of a semiconductor device having a hetero junction bipolar transistor (HBT), a Schottky diode and a resistance element. The present invention is directed to the manufacturing method of a semiconductor device in which respective semiconductor layers which become a sub collector layer, a collector layer, a base layer, a wide gap emitter layer and an emitter layer are sequentially formed over one surface of a semiconductor substrate and, thereafter, respective semiconductor layers are processed to form the hetero junction bipolar transistor, the Schottky diode and the resistance element in a monolithic manner. An emitter electrode of the hetero junction bipolar transistor, a Schottky electrode of the Schottky diode and a resistance film of the resistance element are simultaneously formed using a same material (for example, WSiN). Accordingly, the man-hours can be reduced and the manufacturing cost of the semiconductor device can be reduced.

公开(公告)号：US07214558B2

公开(公告)日：2007-05-08

申请号：US11257060

申请日：2005-10-25

申请人： Atsushi Kurokawa ,  Hiroshi Inagawa ,  Toshiaki Kitahara ,  Yoshinori Imamura

发明人： Atsushi Kurokawa ,  Hiroshi Inagawa ,  Toshiaki Kitahara ,  Yoshinori Imamura

IPC分类号： H01L21/00 ,  H01L21/8235

CPC分类号： H01L29/66318 ,  H01L29/0657 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

摘要： Provided is a technique of improving the properties of a bipolar transistor. Described specifically, upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a region OA1 and a region in which the base mesa 4a is formed, followed by successive formation of gold germanium (AuGe), nickel (Ni) and Au in the order of mention over the entire surface of a substrate so that the stacked film of them will not become an isolated pattern. As a result, the stacked film over the base mesa 4a is connected to a stacked film at the outer periphery of the region OA1, facilitating peeling of the stacked film over the base mesa 4a. In addition, generation of side etching upon formation of a via hole extending from the back side of the substrate to a backside via electrode is reduced by forming the backside via electrode using a material such as WSi which hardly reacts with an n type GaAs layer or n type InGaAs layer.

摘要翻译： 提供了改进双极晶体管的性质的技术。 具体地说，通过剥离法在基台周围形成集电极时，在区域OA1的外周与形成有基台面4a的区域之间的连接部分上形成抗蚀剂膜， 随后在衬底的整个表面上依次形成金锗（AuGe），镍（Ni）和Au，使得它们的堆叠膜不会变成隔离图案。 结果，基底台面4a上的层叠膜在区域OA1的外周与层叠膜连接，有利于层叠膜在基台面4a上的剥离。 此外，通过使用几乎不与n型GaAs层反应的诸如WSi的材料形成背面通孔电极来减少形成从基板的背面延伸到背面通孔电极的通孔形成侧面蚀刻，或 n型InGaAs层。

公开(公告)号：US20060138459A1

公开(公告)日：2006-06-29

申请号：US11316989

申请日：2005-12-27

申请人： Atsushi Kurokawa ,  Isao Ohbu ,  Yasunari Umemoto ,  Satoshi Sasaki ,  Chushiro Kusano ,  Yoshinori Imamura

发明人： Atsushi Kurokawa ,  Isao Ohbu ,  Yasunari Umemoto ,  Satoshi Sasaki ,  Chushiro Kusano ,  Yoshinori Imamura

IPC分类号： H01L31/109

CPC分类号： H01L29/7304 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

摘要： Provided is a semiconductor device equipped with HBTs capable of satisfying both thermal stability and reliability and having improved electrostatic breakdown voltage. The HBT according to the present invention is obtained by successively forming, over the main surface of a substrate made of a compound semiconductor, a sub-collector layer, a collector layer, a base layer, an emitter layer, a collector electrode electrically connected to the collector layer, a base electrode electrically connected to the base layer, an emitter mesa layer formed over the emitter layer and electrically connected to the emitter layer, and an emitter electrode electrically connected to the emitter mesa layer. The emitter mesa layer has a semiconductor layer made of an n type GaAs layer, a high concentration semiconductor layer made of an n+ type GaAs layer over the semiconductor layer and a ballast resistor layer made of an n type InGaAs layer over the high concentration semiconductor layer.

摘要翻译： 提供了配备能够满足热稳定性和可靠性并具有改善的静电击穿电压的HBT的半导体器件。 根据本发明的HBT是通过在由化合物半导体制成的衬底的主表面上连续形成子集电极层，集电极层，基极层，发射极层，集电极，电连接到 集电极层，电连接到基极层的基极，在发射极层上形成并电连接到发射极层的发射极台面层和电连接到发射极台面层的发射极。 发射极台面层具有由n型GaAs层构成的半导体层，在半导体层上形成由n + +型GaAs层构成的高浓度半导体层和由n型GaAs层制成的镇流电阻层 InGaAs层在高浓度半导体层上。

公开(公告)号：US06724020B2

公开(公告)日：2004-04-20

申请号：US10420764

申请日：2003-04-23

申请人： Hiroyuki Takazawa ,  Tohru Oka ,  Isao Ohbu ,  Yoshinori Imamura

发明人： Hiroyuki Takazawa ,  Tohru Oka ,  Isao Ohbu ,  Yoshinori Imamura

IPC分类号： H01L31109

CPC分类号： H01L29/7371 ,  H03F3/60

摘要： A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wherein the protective insulating film has a density of oxygen of less than 7×1022 cm−3. This semiconductor device prevents performance deterioration and ensures high performance in a power amplifier.

摘要翻译： 一种半导体器件，包括具有由包含铟的半导体构成的发射极层的双极晶体管和形成在发射极层的保护环的表面上的含有氧和氧的保护绝缘膜，其中该保护绝缘膜具有密度 的氧气小于7×10 22 cm -3。 该半导体器件防止性能恶化并确保功率放大器的高性能。