Display device and method of fabricating the same

    公开(公告)号:US11894355B2

    公开(公告)日:2024-02-06

    申请号:US17471581

    申请日:2021-09-10

    CPC classification number: H01L25/167 H01L27/124 H01L27/1259

    Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.

    Display device and method for fabricating the same

    公开(公告)号:US11765947B2

    公开(公告)日:2023-09-19

    申请号:US17107638

    申请日:2020-11-30

    CPC classification number: H10K59/131 H10K59/122 H10K59/1201

    Abstract: A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern and a first signal line, a buffer layer on the first conductive layer, a semiconductor layer on the buffer layer and including a first semiconductor pattern and a second semiconductor pattern separated from the first semiconductor pattern, an insulating layer on the semiconductor layer and including an insulating layer pattern, a second conductive layer on the insulating layer and including a second signal line, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including an anode electrode. The first semiconductor pattern is electrically connected to the lower light blocking pattern by the anode electrode, and at least a portion of the second semiconductor pattern is isolated from and overlaps each of the first signal line and the second signal line.

    Electronic apparatus and method of manufacturing the same

    公开(公告)号:US11574987B2

    公开(公告)日:2023-02-07

    申请号:US17223505

    申请日:2021-04-06

    Abstract: An electronic apparatus includes a first transistor including a first oxide semiconductor pattern, a second transistor including a second oxide semiconductor pattern, a blocking layer including a conductive material, a signal line including a first line and a second line which are disposed on different layers, and a bridge pattern electrically connected to each of the first transistor, the first line of the signal line, and the second line of the signal line, wherein the first line of the signal line and the blocking layer are disposed on a same layer, and the second line of the signal line and the first oxide semiconductor pattern are disposed on a same layer.

    Display device and method for fabricating the same

    公开(公告)号:US12069918B2

    公开(公告)日:2024-08-20

    申请号:US18230281

    申请日:2023-08-04

    CPC classification number: H10K59/131 H10K59/122 H10K59/1201

    Abstract: A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern and a first signal line, a buffer layer on the first conductive layer, a semiconductor layer on the buffer layer and including a first semiconductor pattern and a second semiconductor pattern separated from the first semiconductor pattern, an insulating layer on the semiconductor layer and including an insulating layer pattern, a second conductive layer on the insulating layer and including a second signal line, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including an anode electrode. The first semiconductor pattern is electrically connected to the lower light blocking pattern by the anode electrode, and at least a portion of the second semiconductor pattern is isolated from and overlaps each of the first signal line and the second signal line.

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