公开(公告)号：US20240071757A1

公开(公告)日：2024-02-29

申请号：US18502583

申请日：2023-11-06

Applicant: Samsung Display Co., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Mann Ho CHO ,  Kwang Sik JEONG ,  Hyeon Sik KIM ,  Hyun Eok SHIN ,  Byung Soo SO ,  Ju Hyun LEE

IPC: H01L21/02

CPC classification number: H01L21/02491 ,  H01L21/02422 ,  H01L21/02502 ,  H01L21/0254

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

公开(公告)号：US20230380256A1

公开(公告)日：2023-11-23

申请号：US18363944

申请日：2023-08-02

Applicant: Samsung Display Co., LTD.

Inventor： Wang Woo LEE ,  Sung Ho KIM ,  Hyeon Sik KIM ,  Joon Hyoung PARK ,  Seok Je SEONG ,  Jin Sung AN ,  Jin Seok OH ,  Min Woo WOO ,  Ji Seon LEE ,  Pil Suk LEE ,  Yun Sik JOO

IPC: H10K77/10 ,  H10K59/131 ,  H10K59/121 ,  H10K71/00 ,  H10K71/80

CPC classification number: H10K77/111 ,  H10K59/131 ,  H10K59/1213 ,  H10K71/00 ,  H10K71/80 ,  H01L27/1218

Abstract: A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

公开(公告)号：US20230317007A1

公开(公告)日：2023-10-05

申请号：US18146228

申请日：2022-12-23

Applicant: Samsung Display Co., Ltd.

Inventor： Hyeon Sik KIM ,  Gun Hee KIM ,  Tae Kyung AHN ,  Dae Young LEE ,  Sang Woo KIM

IPC: G09G3/3233 ,  G09G3/3266 ,  G06V40/13 ,  G06F3/041 ,  H10K59/40 ,  H10K59/131

CPC classification number: G09G3/3233 ,  G09G3/3266 ,  G06V40/1318 ,  G06F3/0412 ,  H10K59/40 ,  H10K59/131 ,  G09G2330/021 ,  G09G2320/043 ,  G09G2354/00

Abstract: A display device includes a pixel including a display driver configured to apply a driving current to a light-emitting element; and an optical sensor including a sensing driver configured to apply a sensing current to a read-out line based on a photocurrent from the photoelectric conversion element, wherein the pixel further includes, a driving transistor configured to control the driving current, a first transistor configured to apply a first initialization voltage to an anode of the light-emitting element based on an emission control signal, and a second transistor configured to connect the anode of the light-emitting element to a first electrode of the driving transistor in accordance with the emission control signal, and wherein a channel of the first transistor is a different material from channels of the driving transistor and the second transistor.

公开(公告)号：US20220093804A1

公开(公告)日：2022-03-24

申请号：US17544353

申请日：2021-12-07

Applicant: Samsung Display Co., Ltd.

Inventor： Do Hyung KIM ,  Gun Hee KIM ,  Hyeon Sik KIM ,  Sang Ho PARK ,  Joo Hee JEON

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/32 ,  H01L29/08

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.