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    Thin film transistor array panel and manufacturing method thereof
    11.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权

    公开(公告)号：US12230644B2

    公开(公告)日：2025-02-18

    申请号：US16588205

    申请日：2019-09-30

    Applicant: Samsung Display Co., Ltd.

    Inventor： Seung Hyun Park ,  Jun Ho Song ,  Jean Ho Song ,  Jae Hak Lee

    IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1362

    Abstract: A thin film transistor array panel according to an exemplary embodiment of the invention includes: an insulating substrate; a gate line disposed on the insulating substrate and including a gate pad portion; a data line insulated from and crossing the gate line, and including a source electrode and a data pad portion; a drain electrode facing the source electrode; an organic insulating layer disposed on the data line and the drain electrode, and including a first contact hole; a common electrode disposed on the organic insulating layer, and including a second contact hole; a passivation layer disposed on the common electrode, and including a third contact hole; and a pixel electrode disposed on the passivation layer, and being in contact with the drain electrode, in which the third contact hole is disposed to be adjacent to one surface of the first contact hole for improvement of an aperture ratio and a stable electrode connection.

    Semiconductor device and method for fabricating the same
    12.
    发明授权
    Semiconductor device and method for fabricating the same 有权

    公开(公告)号：US11342401B2

    公开(公告)日：2022-05-24

    申请号：US16839796

    申请日：2020-04-03

    Applicant: Samsung Display Co., Ltd.

    Inventor： Ji Eun Choi ,  Deok Hoi Kim ,  Jeong Hwan Kim ,  Jong Baek Seon ,  Jun Cheol Shin ,  Jae Hak Lee

    IPC: H01L27/32 ,  H01L51/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

    Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

    Display device
    13.
    发明授权
    Display device 有权

    公开(公告)号：US10971567B2

    公开(公告)日：2021-04-06

    申请号：US16548656

    申请日：2019-08-22

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jae Hak Lee ,  Ho Kyoon Kwon ,  Deuk Jong Kim ,  Dong-Hyun Lee ,  Ji Hye Heo

    IPC: H01L27/32 ,  H01L27/15 ,  H01L51/00

    Abstract: An embodiment of the present invention provides a display device including a substrate including a display area, and a peripheral area outside the display area and including a bending area, a first conductive layer including a first signal wire over the substrate, a first insulating layer over the first conductive layer, a second insulating layer in a different layer from the first insulating layer, overlapping the bending area, and having a first edge positioned around the bending area, and a protector over the second insulating layer, wherein the first signal wire is in the peripheral area, crosses the first edge of the second insulating layer, does not overlap the bending area, and includes a first portion not covered by the second insulating layer, and wherein the protector overlaps at least a portion of the first portion, and has an edge that is parallel with an edge of the first portion.

    Display device
    14.
    发明授权
    Display device 有权

    公开(公告)号：US10431640B2

    公开(公告)日：2019-10-01

    申请号：US15867455

    申请日：2018-01-10

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jae Hak Lee ,  Ho Kyoon Kwon ,  Deuk Jong Kim ,  Dong-Hyun Lee ,  Ji Hye Heo

    IPC: H01L27/32 ,  H01L51/00 ,  H01L27/15

    Abstract: An embodiment of the present invention provides a display device including a substrate including a display area, and a peripheral area outside the display area and including a bending area, a first conductive layer including a first signal wire over the substrate, a first insulating layer over the first conductive layer, a second insulating layer in a different layer from the first insulating layer, overlapping the bending area, and having a first edge positioned around the bending area, and a protector over the second insulating layer, wherein the first signal wire is in the peripheral area, crosses the first edge of the second insulating layer, does not overlap the bending area, and includes a first portion not covered by the second insulating layer, and wherein the protector overlaps at least a portion of the first portion, and has an edge that is parallel with an edge of the first portion.

    Liquid crystal display
    16.
    发明授权
    Liquid crystal display 有权

    公开(公告)号：US09927670B2

    公开(公告)日：2018-03-27

    申请号：US14944318

    申请日：2015-11-18

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jong Hwan Park ,  Jae Hak Lee ,  Eun Je Jang

    IPC: G02F1/1362 ,  H01L27/12

    CPC classification number: G02F1/136286 ,  H01L27/124

    Abstract: There is provided a liquid crystal display including: a first substrate including a display area displaying an image and a peripheral area surrounding the display area; a data line disposed on the first substrate in the display area and including a source electrode; a first gate insulating layer disposed at a portion except for the portion where the data line is disposed on the first substrate; a semiconductor layer disposed on the source electrode; a drain electrode disposed on the semiconductor layer; a gate line disposed on the first gate insulating layer in the display area and including a gate electrode; and a second gate insulating layer disposed between the gate electrode on the first gate insulating layer and the semiconductor layer, in which the gate line and the data line extend in the same direction to each other.

    Thin film transistor array panel and manufacturing method thereof
    18.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权

    公开(公告)号：US10431605B2

    公开(公告)日：2019-10-01

    申请号：US15809663

    申请日：2017-11-10

    Applicant: Samsung Display Co., Ltd.

    Inventor： Seung Hyun Park ,  Jun Ho Song ,  Jean Ho Song ,  Jae Hak Lee

    IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1362

    Abstract: A thin film transistor array panel according to an exemplary embodiment of the invention includes: an insulating substrate; a gate line disposed on the insulating substrate and including a gate pad portion; a data line insulated from and crossing the gate line, and including a source electrode and a data pad portion; a drain electrode facing the source electrode; an organic insulating layer disposed on the data line and the drain electrode, and including a first contact hole; a common electrode disposed on the organic insulating layer, and including a second contact hole; a passivation layer disposed on the common electrode, and including a third contact hole; and a pixel electrode disposed on the passivation layer, and being in contact with the drain electrode, in which the third contact hole is disposed to be adjacent to one surface of the first contact hole for improvement of an aperture ratio and a stable electrode connection.

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