公开(公告)号：US12080826B2

公开(公告)日：2024-09-03

申请号：US17171451

申请日：2021-02-09

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L33/12 ,  H01L27/15 ,  H01L33/00 ,  H01L33/56 ,  H01L33/62

CPC classification number: H01L33/12 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/56 ,  H01L33/62

Abstract: A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.

公开(公告)号：US12062667B2

公开(公告)日：2024-08-13

申请号：US17831285

申请日：2022-06-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/12 ,  H10K59/121 ,  H10K59/124 ,  H10K59/12 ,  H10K102/00

CPC classification number: H01L27/1248 ,  H01L27/1288 ,  H10K59/1213 ,  H10K59/124 ,  H01L27/1225 ,  H10K59/1201 ,  H10K2102/311

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

公开(公告)号：US11894393B2

公开(公告)日：2024-02-06

申请号：US17232211

申请日：2021-04-16

Applicant: Samsung Display Co., LTD. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

Inventor： Hye Lim Choi ,  Saeroonter Oh ,  Kihwan Kim ,  Joon Seok Park ,  Ji Hwan Lee ,  Jun Hyung Lim

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/423 ,  H01L27/15 ,  H01L29/786 ,  H10K59/12

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/15 ,  H01L29/42384 ,  H01L29/78633 ,  H10K59/12

Abstract: An embodiment of the present invention provides a display device including a substrate and a transistor on the substrate. The transistor includes: a lower layer having conductivity and including a body portion and a plurality of protrusions; an oxide semiconductor layer including a channel region, a first conductive region disposed at a first side of the channel region, and a second conductive region disposed at a second side of the channel region, where the second side is opposite the first side; a gate electrode overlapping the channel region in a plan view; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The plurality of protrusions protrudes from the body portion, and the body portion overlaps the channel region in the plan view.

公开(公告)号：US11764231B2

公开(公告)日：2023-09-19

申请号：US17367198

申请日：2021-07-02

Applicant: Samsung Display Co., Ltd. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

Inventor： Joon Seok Park ,  Sae Roon Ter Oh ,  Jun Hyung Lim ,  Su Hyun Kim ,  Young Joon Choi

IPC: H01L27/00 ,  H01L27/12

CPC classification number: H01L27/1262 ,  H01L27/124 ,  H01L27/1225

Abstract: A display device includes: a substrate; a light blocking layer of a driving transistor and an active layer of a switching transistor on the substrate; a buffer layer on the light blocking layer, the buffer layer overlapping the light blocking layer; an active layer of the driving transistor on the buffer layer; a first gate insulating layer on the active layer of the driving transistor and the active layer of the switching transistor; and a first gate electrode on the first gate insulating layer and overlapping the active layer of the driving transistor and a second gate electrode overlapping the active layer of the switching transistor, wherein the light blocking layer and the active layer of the switching transistor are on a same layer.

公开(公告)号：US11594587B2

公开(公告)日：2023-02-28

申请号：US15930650

申请日：2020-05-13

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok Son ,  Myeong Ho Kim ,  Jay Bum Kim ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12

Abstract: A display device includes a substrate, a first semiconductor layer on the substrate, a first gate insulating film on the first semiconductor layer, a first conductive layer on the first gate insulating film and including a first gate electrode and a first electrode of a capacitor connected to the first gate electrode, a second semiconductor layer on the first gate insulating film and at a different layer from the first semiconductor layer, a second gate insulating film on the first conductive layer and the second semiconductor layer, a second conductive layer on the second gate insulating film and including a second gate electrode and a second electrode of the capacitor, a second interlayer insulating film on the second conductive layer, and a third conductive layer on the second interlayer insulating film and including a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode.

公开(公告)号：US11581517B2

公开(公告)日：2023-02-14

申请号：US16837540

申请日：2020-04-01

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Yeon Keon Moon ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L51/56 ,  G09G3/3266 ,  G09G3/3291 ,  H01L29/786 ,  H01L29/49 ,  G09G3/325

Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.

公开(公告)号：US11417282B2

公开(公告)日：2022-08-16

申请号：US16782973

申请日：2020-02-05

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Joon Seok Park ,  Jun Hyung Lim ,  Jin Seong Park ,  Jiazhen Sheng ,  Tae Hyun Hong

IPC: H01L21/00 ,  G09G3/3291 ,  G09G3/3266 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L27/12

Abstract: A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).

公开(公告)号：US11329118B2

公开(公告)日：2022-05-10

申请号：US16915049

申请日：2020-06-29

Applicant: Samsung Display Co., Ltd.

Inventor： Jay Bum Kim ,  Myeong Ho Kim ,  Kyoung Seok Son ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/14 ,  H01L27/32 ,  H01L51/56 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.

公开(公告)号：US11195861B2

公开(公告)日：2021-12-07

申请号：US16818310

申请日：2020-03-13

Applicant: Samsung Display Co., LTD.

Inventor： Geun Chul Park ,  Joon Seok Park ,  Tae Sang Kim ,  Yeon Keon Moon ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12

Abstract: A display device and a method of manufacturing the same. The display device includes a pixel connected to a scan line and a data line intersecting the scan line, and a driving transistor and a switching transistor disposed in the pixel. The driving transistor includes a substrate, a first active layer disposed on the substrate, a first gate electrode disposed on the first active layer, and a second insulating film contacting the first gate electrode and the first gate electrode. The switching transistor includes a second active layer disposed on the substrate, a second gate electrode disposed on the second active layer, a first insulating film contacting the second active layer and the second gate electrode, and a second insulating film covering the first insulating film. The first insulating film and the second insulating film are made of different materials from each other.

公开(公告)号：US10985281B2

公开(公告)日：2021-04-20

申请号：US16752126

申请日：2020-01-24

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Hun Lim ,  Joon Seok Park ,  Jay Bum Kim ,  Jun Hyung Lim ,  Kyoung Seok Son

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/423

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.