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公开(公告)号:US20180114819A1
公开(公告)日:2018-04-26
申请号:US15605431
申请日:2017-05-25
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Byung Hoon KANG , Kwang Suk KIM , Joon-Hwa BAE , Woo Jin CHO , Hyun Jin CHO , Jun Hyuk CHEON , Byoung Kwon CHOO
IPC: H01L27/32
CPC classification number: H01L27/3248 , H01L27/3276 , H01L2227/323
Abstract: A method of manufacturing a display device includes: forming an active layer on a substrate; forming a first insulation layer covering the active layer; forming a gate metal line on the first insulation layer; forming a third insulation layer covering the gate metal line and including a silicon oxide; forming a fourth insulation layer including a silicon nitride on the third insulation layer; forming a fifth insulation layer including a silicon oxide on the fourth insulation layer; arranging a blocking member over a region in which the active layer and the gate metal line overlap; forming a fifth auxiliary insulation layer by doping nitrogen ions in the fifth insulation layer; and exposing a part of an upper surface of the fourth insulation layer by removing a portion of a fifth main insulation layer of the fifth insulation layer which does not overlap the fifth auxiliary insulation layer.
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公开(公告)号:US20180043501A1
公开(公告)日:2018-02-15
申请号:US15664166
申请日:2017-07-31
Applicant: Samsung Display Co., Ltd.
Inventor: Hyun Jin CHO , Joon-Hwa BAE , Byoung Kwon CHOO , Byung Hoon KANG , Jun Hyuk CHEON , Jeong-Hye CHOI , Young Ho JEONG , Woo Jin CHO
IPC: B24B37/34 , B24B53/017 , B24B37/10
CPC classification number: B24B37/345 , B24B37/10 , B24B53/017
Abstract: A substrate polishing system includes: a polishing machine and a substrate transporter. The polishing machine includes: a lower surface plate to which a substrate is mounted, and an upper surface plate which faces the lower surface plate and polishes the substrate in cooperation with the lower surface plate, the upper surface plate having a larger area than the substrate mounted on the lower surface plate. The substrate transporter is adjacent to the polishing machine and commonly transports the substrate to and from the polishing machine in a first direction, attaches the substrate to the lower surface plate before polishing thereof, and separates from the lower surface plate the substrate after polishing thereof.
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公开(公告)号:US20170145259A1
公开(公告)日:2017-05-25
申请号:US15355917
申请日:2016-11-18
Applicant: SAMSUNG DISPLAY CO., LTD. , UBmaterials lnc.
Inventor: Byoung-Kwon CHOO , Jin-Hyung PARK , Jeong-Kyun NA , Joon-Hwa BAE , Byoung-Ho CHEONG , Joo-Woan CHO , In-Sun HWANG
IPC: C09G1/02 , H01L29/786 , H01L21/306 , H01L27/12 , C09K3/14 , H01L21/02
CPC classification number: C09G1/02 , B81C2201/0104 , C09K3/1409 , G02F1/1368 , G02F2202/104 , H01L21/3212 , H01L27/1222 , H01L27/1274 , H01L27/3262 , H01L29/66757 , H01L29/78675
Abstract: A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.
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