公开(公告)号：US10153193B2

公开(公告)日：2018-12-11

申请号：US15615123

申请日：2017-06-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jeong Do Yang ,  Byoung Yong Kim ,  Seung-Soo Ryu ,  Sang Hyeon Song ,  Jung Yun Jo ,  Seung-Hwa Ha ,  Jeong Ho Hwang

IPC: H01L21/70 ,  H01L23/29 ,  H01L23/522 ,  H01L23/525 ,  H01L23/532 ,  H01L27/12 ,  H01L49/02

Abstract: An integrated circuit includes a substrate, a pad electrode disposed on the substrate, and a passivation layer disposed on the pad electrode and including an organic insulating material. The integrated circuit further includes a bump electrode disposed on the passivation layer and connected to the pad electrode through a contact hole. The passivation layer includes an insulating portion having a first thickness and covering an adjacent edge region of the pad electrode and the substrate, and a bump portion having a second thickness, that is greater than the first thickness, and covering a center portion of the pad electrode.

公开(公告)号：US09406704B1

公开(公告)日：2016-08-02

申请号：US14799995

申请日：2015-07-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yung Bin Chung ,  Chul-Hyun Baek ,  Eun Jeong Cho ,  Jung Yun Jo

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/417 ,  H01L21/02

Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.

公开(公告)号：US09385142B2

公开(公告)日：2016-07-05

申请号：US14064925

申请日：2013-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Yun Jo ,  Chang Ok Kim

IPC: H01L27/12 ,  G02F1/1362 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/124 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L29/4908 ,  H01L29/7869

Abstract: A liquid crystal display includes: an insulation substrate, a gate line disposed on the insulation substrate, a first field generating electrode disposed on the insulation substrate, a gate insulating layer disposed on the gate line and the first field generating electrode, a semiconductor disposed on the gate insulating layer and a data line disposed on the gate insulating layer. A value [N—H]/[Si—H] of the gate insulating layer is in a range of about 13 to about 25. Here, the value [N—H]/[Si—H] means a ratio of a bonding number [N—H] of nitrogen and hydrogen to a bonding number [Si—H] of silicon and hydrogen according to an analysis of an FT-IR spectrometer.

Abstract translation: 液晶显示器包括：绝缘基板，设置在绝缘基板上的栅极线，设置在绝缘基板上的第一场产生电极，设置在栅极线和第一场产生电极上的栅绝缘层， 栅极绝缘层和设置在栅极绝缘层上的数据线。 栅极绝缘层的值[N-H] / [Si-H]在约13〜约25的范围内。这里，值[N-H] / [Si-H]表示键合 根据FT-IR光谱仪的分析，氮和氢的数量[N-H]与硅和氢的键合数[Si-H]。

公开(公告)号：US11588053B2

公开(公告)日：2023-02-21

申请号：US17149164

申请日：2021-01-14

Applicant: Samsung Display Co., LTD.

Inventor： Ji Hye Han ,  Jung Yun Jo ,  Chui Min Bae

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

公开(公告)号：US11031446B2

公开(公告)日：2021-06-08

申请号：US16393823

申请日：2019-04-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Yun Jo ,  Ki Kyung Youk

IPC: H01L27/32 ,  H01L23/00 ,  H01L51/00

Abstract: An electronic device includes a substrate; and a pad area on the substrate, the pad area including: a first pad part including a first pad terminal; a second pad part on a side of the first pad part in a first direction and including a second pad terminal; and a third pad part on the other side of the first pad part in the first direction and including a third pad terminal, each of the first pad terminal, the second pad terminal and the third pad terminal including a first long side, a second long side facing the first long side, and at least one bridge extending from the first long side to the second long side, the first long side of the first pad terminal extending in a second direction intersecting the first direction.

公开(公告)号：US10656460B2

公开(公告)日：2020-05-19

申请号：US16147248

申请日：2018-09-28

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Yun Jo ,  Sung Hoon Yang

IPC: G02F1/1335 ,  G02F1/1333 ,  G02B1/18

Abstract: A liquid crystal display includes: a lower display panel including a lower polarizing plate disposed between a lower transparent substrate and a passivation layer of the lower display panel; and an upper display panel including an upper polarizing plate disposed between an upper transparent substrate and a passivation layer of the upper display panel, wherein at least one of the lower polarizing plate and the upper polarizing plate is a reflection type polarizing plate and includes a plurality of linear patterns arranged so as to be extended in one direction and a hydrophobic layer covering at least portion of side wall portions of the linear patterns.

公开(公告)号：US09614092B2

公开(公告)日：2017-04-04

申请号：US14879993

申请日：2015-10-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Yun Jo ,  Ki Seong Seo ,  Eun Jeong Cho

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L27/1222 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.

公开(公告)号：US20150144951A1

公开(公告)日：2015-05-28

申请号：US14257791

申请日：2014-04-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Doo-Na Kim ,  Hyeon Jun Lee ,  Chang Ok Kim ,  Yoon Ho Kim ,  Ki Seong Seo ,  Jung Yun Jo

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L27/15 ,  H01L21/8234

CPC classification number: H01L21/02164 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02271 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

Abstract: A thin film transistor array panel including: an insulation substrate, a gate line provided on the insulation substrate and including a gate electrode, a gate insulating layer provided on the gate line, a semiconductor layer provided on the gate insulating layer, and a source electrode and a drain electrode provided on the semiconductor layer and separated from each other, and the gate insulating layer includes a fluorinated silicon oxide (SiOF) layer, and the gate electrode, the semiconductor layer, the source electrode, and the drain electrode form a thin film transistor, and a threshold voltage shift value of the thin film transistor is substantially less than 4.9 V.

Abstract translation: 1.一种薄膜晶体管阵列面板，包括：绝缘基板，设置在所述绝缘基板上并包括栅电极的栅极线，设置在所述栅极线上的栅极绝缘层，设置在所述栅极绝缘层上的半导体层，以及源极 和设置在半导体层上并分离的漏电极，栅极绝缘层包括氟化氧化硅（SiOF）层，栅电极，半导体层，源电极和漏电极形成薄的 薄膜晶体管，并且薄膜晶体管的阈值电压偏移值基本上小于4.9V。

公开(公告)号：US12094977B2

公开(公告)日：2024-09-17

申请号：US18109301

申请日：2023-02-14

Applicant: Samsung Display Co., LTD.

Inventor： Ji Hye Han ,  Jung Yun Jo ,  Chul Min Bae

IPC: H01L27/12 ,  H01L29/786 ,  H10K59/121

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H10K59/1213

Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

公开(公告)号：US10262965B2

公开(公告)日：2019-04-16

申请号：US15616639

申请日：2017-06-07

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Soo Ryu ,  Jeong Do Yang ,  Jung Yun Jo

IPC: H01L23/00 ,  H01L23/498 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1335 ,  H01L21/48 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368

Abstract: A display device includes: a flexible substrate having a display area for displaying an image and a peripheral area outside the display area; a first pad electrode in the peripheral area of the flexible substrate; and a driver connected to the first pad electrode. The driver includes: a circuit board including a driving circuit; a second pad electrode on one side of the circuit board and facing the first pad electrode; a convex structure on one side of the second pad electrode and having an oval cross-section; and a bump electrode on one side of the convex structure and connected to the first pad electrode. The bump electrode includes a column covering the convex structure and a convex portion extending from one side of the column and protruding to the first pad electrode.