公开(公告)号：US11909380B2

公开(公告)日：2024-02-20

申请号：US16668118

申请日：2019-10-30

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Ran Hee Shin ,  Tae Kyung Lee ,  Sung Han ,  Yun Sung Kang ,  Sung Sun Kim ,  Jin Suk Son ,  Jeong Suong Yang ,  Hwa Sun Lee ,  Eun Tae Park

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/02

CPC classification number: H03H9/173 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/174 ,  H03H9/02118 ,  H03H2003/021 ,  H03H2003/023

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

公开(公告)号：US11558026B2

公开(公告)日：2023-01-17

申请号：US16875225

申请日：2020-05-15

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Sang Heon Han ,  Ran Hee Shin ,  Jin Suk Son

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.

公开(公告)号：US10554194B2

公开(公告)日：2020-02-04

申请号：US16224025

申请日：2018-12-18

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  In Young Kang ,  Ran Hee Shin ,  Jin Suk Son

IPC: H03H9/17 ,  H03H9/54 ,  H03H3/02 ,  H03H9/02

Abstract: A bulk acoustic resonator includes a substrate, a first electrode disposed above the substrate, a piezoelectric body disposed on the first electrode and including a plurality of piezoelectric layers each including aluminum nitride with a doping material, and a second electrode disposed on the piezoelectric body, where at least one of the piezoelectric layers is a compressive piezoelectric layer formed under compressive stress.

公开(公告)号：US10541668B2

公开(公告)日：2020-01-21

申请号：US15085072

申请日：2016-03-30

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Ran Hee Shin ,  Tae Kyung Lee ,  Sung Han ,  Yun Sung Kang ,  Sung Sun Kim ,  Jin Suk Son ,  Jeong Suong Yang ,  Hwa Sun Lee ,  Eun Tae Park

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

公开(公告)号：US10439589B2

公开(公告)日：2019-10-08

申请号：US15452090

申请日：2017-03-07

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  Jae Sang Lee ,  Ran Hee Shin ,  In Young Kang ,  Sung Sun Kim ,  Sung Han

IPC: H03H9/17 ,  H03H9/54 ,  H03H9/13 ,  H03H9/60

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode formed on the substrate, and a piezoelectric layer provided between the first electrode and the second electrode. Either one or both of the first electrode and the second electrode include a molybdenum-tungsten alloy having a weight ratio of molybdenum to tungsten in a range of 3:1 to 1:3.

公开(公告)号：US10396755B2

公开(公告)日：2019-08-27

申请号：US15271579

申请日：2016-09-21

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Sung Han ,  Dae Ho Kim ,  Ran Hee Shin ,  Hwa Sun Lee ,  Chang Hyun Lim ,  Tae Kyung Lee ,  Sung Sun Kim

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/13 ,  H03H9/54 ,  H03H9/02

Abstract: A resonator includes a resonating portion including a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode; and a frame provided at an outer edge of the resonating portion, at least a portion of the frame covering an outer end portion of the second electrode.

公开(公告)号：US11558031B2

公开(公告)日：2023-01-17

申请号：US15808662

申请日：2017-11-09

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Jin Suk Son ,  Sung Sun Kim ,  Je Hong Kyoung ,  Hwa Sun Lee ,  Ran Hee Shin

IPC: H03H9/17 ,  H01L41/16 ,  H01L41/39 ,  H01L41/29 ,  H01L41/187 ,  H03H3/02 ,  H03H9/02 ,  H01L41/18

Abstract: A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

公开(公告)号：US11533041B2

公开(公告)日：2022-12-20

申请号：US16881146

申请日：2020-05-22

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Ran Hee Shin ,  Jin Suk Son ,  Je Hong Kyoung

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/05 ,  H03H9/54

Abstract: A bulk acoustic wave resonator includes: a first electrode; a piezoelectric layer disposed on at least a portion of the first electrode; and a second electrode disposed on the piezoelectric layer. The piezoelectric layer contains a dopant, and a value of [a thickness (nm) of the piezoelectric layer×a concentration (at %) of the dopant]/100 is less than or equal to 80.

公开(公告)号：US11171628B2

公开(公告)日：2021-11-09

申请号：US15972694

申请日：2018-05-07

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Sung Sun Kim ,  Sang Kee Yoon ,  Chang Hyun Lim ,  Jin Suk Son ,  Ran Hee Shin ,  Je Hong Kyoung

IPC: H03H9/17 ,  H03H9/13 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05

Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

公开(公告)号：US11114997B2

公开(公告)日：2021-09-07

申请号：US16418107

申请日：2019-05-21

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Ran Hee Shin ,  Tae Kyung Lee ,  Sung Jun Lee ,  Hwa Sun Lee ,  Je Hong Kyoung ,  Sung Sun Kim ,  Jin Suk Son

IPC: H03H9/02 ,  H03H9/15 ,  H03H9/17 ,  H03H9/54

Abstract: A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.