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    METHOD FOR CONTROLLING MAGNETIC PROPERTIES THROUGH ION DIFFUSION IN A MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
    13.
    发明申请
    METHOD FOR CONTROLLING MAGNETIC PROPERTIES THROUGH ION DIFFUSION IN A MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 有权
    用于通过旋转传递扭矩磁性随机存取存储器应用中的磁性接头中的离子扩散来控制磁性的方法

    公开(公告)号：US20150325623A1

    公开(公告)日：2015-11-12

    申请号：US14704341

    申请日：2015-05-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Roman Chepulskyy ,  Dmytro Apalkov

    IPC: H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

    CPC classification number: H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the free and reference layers. An interface is between the nonmagnetic spacer and free layers. Providing the free layer further includes applying at least one electric field while the free layer is at a local temperature above an operating temperature of the magnetic junction. The electric field(s) exert a force on an anion in the free layer in a direction away from the interface between the free layer and the nonmagnetic spacer layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 该方法包括提供参考层，非磁性间隔层和自由层。 非磁性间隔层位于游离层和参考层之间。 接口位于非磁性间隔物和自由层之间。 提供自由层还包括施加至少一个电场，同时自由层处于高于磁结的操作温度的局部温度。 电场在离开自由层和非磁性间隔层之间的界面的方向上对自由层中的阴离子施加力。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

    Diffusionless transformations in MTJ stacks
    14.
    发明授权
    Diffusionless transformations in MTJ stacks 有权
    MTJ堆栈中的无扩散变换

    公开(公告)号：US09166152B2

    公开(公告)日：2015-10-20

    申请号：US13839672

    申请日：2013-03-15

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Keith Chan ,  Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov

    IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22

    CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08

    Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括包括非磁性间隔层的多个磁性层。 磁结还包括至少一个无扩散转变层。 磁结被配置为当写入电流通过磁结时在多个稳定磁状态之间切换。

    Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices
    15.
    发明授权
    Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices 有权
    用于提供可使用自旋累积切换并且可使用磁电装置选择的磁存储器的方法和系统

    公开(公告)号：US09076954B2

    公开(公告)日：2015-07-07

    申请号：US14097492

    申请日：2013-12-05

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC: G11C11/00 ,  H01L43/02

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/224 ,  H01L43/08

    Abstract: A magnetic memory is described. In one aspect, the magnetic memory includes magnetic junctions and at least one semi-spin valve (SSV) line adjacent to the magnetic junctions. Each magnetic junction includes a magnetic free layer. The SSV line(s) include a ferromagnetic layer and a nonmagnetic layer between the ferromagnetic layer and the magnetic junctions. The SSV line(s) are configured to exert a spin accumulation induced torque on at least a portion of the magnetic junctions due to an accumulation of spin polarized current carriers from a current that is substantially in-plane. The free layer is configured to be written using at least the spin accumulation induced torque. In another aspect, the magnetic memory includes magnetic memory cells and at least one spin torque (ST) line that is analogous to the SSV line. Each magnetic memory cell includes magnetic junction(s) analogous to those above and magnetoelectric selection device(s).

    Abstract translation: 描述磁存储器。 在一个方面，磁存储器包括磁结和至少一个与磁结相邻的半自旋阀（SSV）线。 每个磁结都包括无磁层。 SSV线包括在铁磁层和磁结之间的铁磁层和非磁性层。 SSV线被配置为由于自旋极化电流载流子从基本上在平面内的电流的积累而在至少一部分磁结上施加自旋累积诱导转矩。 自由层被配置为使用至少自旋累积诱导扭矩来写入。 在另一方面，磁存储器包括磁存储器单元和类似于SSV线的至少一个自旋转矩（ST）线。 每个磁存储单元包括与上述类似的磁结和磁电选择装置。

    METHOD AND SYSTEM FOR ENGINEERING THE SECONDARY BARRIER LAYER IN DUAL MAGNETIC JUNCTIONS
    17.
    发明申请
    METHOD AND SYSTEM FOR ENGINEERING THE SECONDARY BARRIER LAYER IN DUAL MAGNETIC JUNCTIONS 有权

    公开(公告)号：US20190273201A1

    公开(公告)日：2019-09-05

    申请号：US15968471

    申请日：2018-05-01

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Zheng Duan ,  Dmytro Apalkov ,  Vladimir Nikitin

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance, a second thickness less than the first thickness and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.

    Method and system for providing a magnetic junction usable in spin transfer torque applications using a post-pattern anneal
    20.
    发明授权
    Method and system for providing a magnetic junction usable in spin transfer torque applications using a post-pattern anneal 有权

    公开(公告)号：US10164177B2

    公开(公告)日：2018-12-25

    申请号：US15445695

    申请日：2017-02-28

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Sebastian Schafer ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Don Koun Lee

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. A first portion of a magnetoresistive stack corresponding to the magnetic junction is provided. Providing this portion of the magnetoresistive stack includes providing at least one layer for a free layer of the magnetic junction. A second portion of the magnetoresistive stack is provided after the step of providing the first portion of the magnetoresistive stack. The magnetoresistive stack is patterned to provide the magnetic junction after the step of providing the second portion of the magnetoresistive stack. An ambient temperature for the magnetoresistive stack and the magnetic junction does not exceed a crystallization temperature of the free layer after the step of providing the free layer through the step of patterning the magnetoresistive stack. The magnetic junction is annealed at an anneal temperature not less than the crystallization temperature after the step of patterning the magnetoresistive stack.

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