公开(公告)号：US09792971B2

公开(公告)日：2017-10-17

申请号：US14730379

申请日：2015-06-04

Applicant: Samsung Electronics Co., LTD.

Inventor： Matthew J. Carey ,  Dmytro Apalkov ,  Keith Chan

IPC: H01L29/82 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction usable in magnetic devices is described. The magnetic junction includes a reference layer, a free layer, a nonmagnetic spacer layer between the reference and free layers, and a rare earth-transition metal (RE-TM) layer in the reference and/or free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. If the RE-TM layer is in the free layer then the RE-TM layer is between hard and soft magnetic layers in the free layer. In this aspect, the RE-TM layer has a standby magnetic moment greater than a write magnetic moment. If the RE-TM layer is in the reference layer, then the magnetic junction includes a second RE-TM layer. In this aspect, a first saturation magnetization quantity of the RE-TM layer matches a second saturation magnetization quantity of the second RE-TM layer over an operating temperature range.

公开(公告)号：US09236564B2

公开(公告)日：2016-01-12

申请号：US14478963

申请日：2014-09-05

Applicant: Samsung Electronics Co., LTD.

Inventor： Matthew J. Carey ,  Keith Chan ,  Roman Chepulskyy

IPC: H01L43/02 ,  G11B5/39 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/12 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. At least one of the free and pinned layers includes at least one engineered Heusler structure having a first magnetic layer, a second magnetic layer and an amorphous layer between the magnetic layers. At least one of the first and second magnetic layer(s) is a Heusler layer. The first magnetic layer's perpendicular magnetic anisotropy energy (PMAE) exceeds is out-of-plane demagnetization energy. The second magnetic layer's PMAE exceeds its out-of-plane demagnetization energy. The free layer and/or the pinned layer has a PMAE greater than an out-of-plane demagnetization energy. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 至少一个自由层和被钉扎层包括至少一个设计的Heusler结构，其具有第一磁性层，第二磁性层和位于磁性层之间的非晶层。 第一和第二磁性层中的至少一个是Heusler层。 第一磁性层的垂直磁各向异性能（PMAE）超过了平面外退磁能。 第二磁性层的PMAE超过其平面外退磁能。 自由层和/或被钉扎层具有大于面外去磁能的PMAE。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US09166152B2

公开(公告)日：2015-10-20

申请号：US13839672

申请日：2013-03-15

Applicant: Samsung Electronics Co., LTD.

Inventor： Keith Chan ,  Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov

IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08

Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括包括非磁性间隔层的多个磁性层。 磁结还包括至少一个无扩散转变层。 磁结被配置为当写入电流通过磁结时在多个稳定磁状态之间切换。