公开(公告)号：US20200319307A1

公开(公告)日：2020-10-08

申请号：US16840037

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd. ,  Samsung Electro-Mechanics Co., Ltd.

Inventor： Jaeyoung HUH ,  Kyungwan PARK ,  Jungho BAE ,  Boram KIM ,  Youngjin KIM ,  Hyun KIM ,  Byeonghoon PARK ,  Yoonsun PARK ,  Woontahk SUNG ,  Kyungwoo LEE ,  Kihoon JANG ,  Younho CHOI

IPC: G01S7/481 ,  G03B17/55 ,  H01S5/024 ,  H01S5/022 ,  H05K5/00 ,  H05K1/02 ,  H05K1/14 ,  H05K7/20 ,  G01S17/10

Abstract: An electronic device including a heat-radiant structure of a camera is provided. The electronic device includes a housing including a front plate facing a first direction and a back plate facing a second direction opposite to the first direction, an image sensor to receive light through a first region of the back plate, the image sensor disposed inside the housing, a laser emitter to emit light through a second region of the back plate, adjacent to the first region, the laser emitter disposed inside the housing, adjacent to the image sensor, a laser driver disposed between the laser emitter and the front plate, a housing structure surrounding at least a part of a side face of the image sensor and driver, a first metal structure disposed between the laser emitter and the laser driver, a first heat transfer member including a first portion disposed between the first metal structure and the driver, a second portion extended from the first portion along an outer face of the housing structure, and a third portion extended from the second portion to a space between the driver and the front plate, while in contact with the first metal structure, a second heat transfer member extended from the third portion of the first heat transfer member, and a first Thermal Interface Material (TIM) disposed between the second heat transfer member and the front plate, the first TIM being in contact with the second heat transfer member.

公开(公告)号：US20240204092A1

公开(公告)日：2024-06-20

申请号：US18321284

申请日：2023-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhyuk PARK ,  Jaejoon OH ,  Sunkyu HWANG ,  Boram KIM ,  Jongseob KIM ,  Joonyong KIM

IPC: H01L29/778 ,  H01L23/31 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/66462

Abstract: A semiconductor device includes a channel layer, a lower barrier layer on the channel layer and including first impurities, an upper barrier layer arranged on the lower barrier layer and including second impurities having a concentration greater than a concentration of the first impurities, a gate electrode on the upper barrier layer, a gate semiconductor layer between the upper barrier layer and the gate electrode, and a source and a drain that are on the channel layer and are spaced apart from each other.

公开(公告)号：US20230343830A1

公开(公告)日：2023-10-26

申请号：US18306341

申请日：2023-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boram KIM ,  Jongseob KIM ,  Woochul JEON ,  Joonyong KIM ,  Junhyuk PARK ,  Jaejoon OH ,  Sunkyu HWANG ,  Injun HWANG

IPC: H01L29/15 ,  H01L29/20 ,  H01L29/207 ,  H01L29/778

CPC classification number: H01L29/157 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/7786

Abstract: Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer structure may include a plurality of buffer layers between a substrate and an active layer. The active layer may include a nitride semiconductor. The plurality of buffer layers may be stacked on each other on the substrate. Each of the plurality of buffer layers may have a super lattice structure and may include a doped nitride semiconductor. The plurality of buffer layers may have different compositions from each other. Adjacent buffer layers, among the plurality of buffer layers, may have different doping concentrations from each other.

公开(公告)号：US20220310833A1

公开(公告)日：2022-09-29

申请号：US17386729

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongchul SHIN ,  Boram KIM ,  Younghwan PARK ,  Jongseob KIM ,  Joonyong KIM ,  Junhyuk PARK ,  Jaejoon OH ,  Minchul YU ,  Soogine CHONG ,  Sunkyu HWANG ,  Injun HWANG

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205

Abstract: A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

公开(公告)号：US20200322467A1

公开(公告)日：2020-10-08

申请号：US16839534

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeyoung HUH ,  Kyungwan PARK ,  Seunghoon KANG ,  Boram KIM ,  Youngjin KIM ,  Sunghoon MOON ,  Hongki MOON ,  Yoonsun PARK ,  Hajoong YUN ,  Jonghoon LIM

IPC: H04M1/02 ,  H04N5/225 ,  H05K1/18 ,  H05K7/20

Abstract: An electronic device including: a housing including a frame structure that forms a portion of a surface of the electronic device, a plate structure that is surrounded by the frame structure and that includes a first opening, a metal portion containing a metallic material and a polymer portion containing a polymer material; a support plate that faces the plate structure and that includes a polymer area formed of a polymer material; a printed circuit board that makes contact with part of the metal portion of the housing; a camera module disposed between the polymer portion included in the plate structure and the polymer area included in the support plate, the camera module including a camera bracket, a camera PCB, and a light emitting unit and a light receiving unit; and a heat dissipating structure that transfers heat generated from the camera module to the metal portion included in the housing