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    Technique for controlling equipment based on biometric information
    15.
    发明授权
    Technique for controlling equipment based on biometric information 有权

    公开(公告)号：US10466726B2

    公开(公告)日：2019-11-05

    申请号：US15773358

    申请日：2016-12-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byeong-Hoon Kwak ,  Chang-Hyun Lee ,  Jae-Ho Jung ,  Yang-Wook Kim ,  Yong-Chan Lee

    IPC: G16H50/20 ,  G05D23/19 ,  G06F3/16 ,  G06F3/01 ,  F24F11/50 ,  A61B5/01 ,  A61B5/024 ,  A61B5/053 ,  A61B5/00 ,  G16H40/63 ,  F24F110/10 ,  G16H10/60

    Abstract: This disclosure relates to technologies for a sensor network, machine-to-machine (M2M) communication, machine type communication (MTC), and Internet of Things (IoT). This disclosure can be utilized in intelligent services based on the above technologies, such as smart homes, smart buildings, smart cities, smart cars or connected cars, health care, digital education, retail sales, security and safety related services, etc. This disclosure relates to a method for generating an instruction for controlling equipment on the basis of biometric information, comprising: a step of obtaining at least one biometric information; a step of determining whether to calculate a calorific value by using stored biometric information and the obtained biometric information, and calculating the calorific value by using the stored biometric information and the obtained biometric information according to the determined result; and generating an instruction for controlling the equipment on the basis of the calculated calorific value.

    SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    17.
    发明申请
    SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体存储器件及其制造方法

    公开(公告)号：US20130094287A1

    公开(公告)日：2013-04-18

    申请号：US13652849

    申请日：2012-10-16

    Applicant: Samsung Electronics Co. Ltd.

    Inventor： Chang-Hyun Lee ,  Jung-Dal Choi ,  Do-Hyun Lee

    IPC: H01L29/788 ,  G11C16/06 ,  H01L21/336

    CPC classification number: G11C16/06 ,  G11C16/3418 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/7881 ,  H01L29/792

    Abstract: A semiconductor device includes a bit line, a first cell string and a second cell string. The first cell string includes a first selecting transistor connected to the bit line in series and having a threshold voltage greater than a first reference voltage, a second selecting transistor having a threshold voltage smaller than a second reference voltage, cell transistors and a ground selecting transistor. The second cell string includes a third selecting transistor connected to the bit line in series and having a threshold voltage smaller than the first reference voltage, a fourth selecting transistor having a threshold voltage greater than the second reference voltage, cell transistors and a ground selecting transistor. A channel region of the first selecting transistor has an enhancement mode and a first conductive type. A channel region of the third selecting transistor has a depletion mode and a second conductive type.

    Abstract translation: 半导体器件包括位线，第一单元串和第二单元串。 第一单元串包括串联连接到位线并且具有大于第一参考电压的阈值电压的第一选择晶体管，具有小于第二参考电压的阈值电压的第二选择晶体管，单元晶体管和接地选择晶体管 。 第二单元串包括串联连接到位线并且具有小于第一参考电压的阈值电压的第三选择晶体管，具有大于第二参考电压的阈值电压的第四选择晶体管，单元晶体管和接地选择晶体管 。 第一选择晶体管的沟道区具有增强模式和第一导电类型。 第三选择晶体管的沟道区具有耗尽模式和第二导电类型。

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