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公开(公告)号：US11886747B2
公开(公告)日：2024-01-30
申请号：US17741755
申请日：2022-05-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chanha Kim , Gyeongmin Nam , Seungryong Jang
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0679 , G06F12/0238
Abstract: A controller includes a central processing unit (CPU) configured to insert a latest received logical address, received together with a write command and data from a host, into a logical address list; a hotness determining circuit configured to assign a maximum weight to the latest received logical address, decrease weights of received logical addresses included in the logical address list by a decay factor, and sum weights of the received logical addresses having values, equal to a value of the latest received logical address, to determine hotness of the latest received logical address; and a parameter adjustment circuit decreasing a magnitude of the decay factor based on the repeatability index of the received logical addresses included in the logical address list, wherein the CPU is configured to control the memory device to store the data in one of the memory regions based on the hotness.
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12.发明申请公开(公告)号：US20220253749A1
公开(公告)日：2022-08-11
申请号：US17497076
申请日：2021-10-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chanha Kim , Youngeun Kim , Kangho Roh , Younghoon Jung , Mijung Cho
Abstract: In a method of operating a storage device including a plurality of nonvolatile memories, reliability information of the storage device is predicted. A read operation on the storage device is performed based on a result of predicting the reliability information. In the predicting the reliability information of the storage device, a model request signal is outputted by selecting one of a plurality of machine learning models as an optimal machine learning model based on deterioration characteristic information and deterioration phase information. The model request signal corresponds to the optimal machine learning model. The plurality of machine learning models are used to generate first reliability information related to the plurality of nonvolatile memories. First parameters of the optimal machine learning model may be received based on the model request signal. The first reliability information is generated based on the deterioration characteristic information and the first parameters.
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13.发明授权公开(公告)号：US11409441B2
公开(公告)日：2022-08-09
申请号：US16999201
申请日：2020-08-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yeonji Kim , Youngdeok Seo , Chanha Kim , Kangho Roh , Hyunkyo Oh , Heewon Lee
Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.
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公开(公告)号：US11862261B2
公开(公告)日：2024-01-02
申请号：US17393797
申请日：2021-08-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwangwoo Lee , Chanha Kim , Heewon Lee
CPC classification number: G11C16/3495 , G11C16/102 , G11C16/26 , G11C16/3404
Abstract: In a method of writing data in a nonvolatile memory device, a write command, a write address and write data to be programmed are received. Offset information representing a verification level is received. The offset information is provided when the write data corresponds to a distribution deterioration pattern by checking an input/output (I/O) pattern of the write data. When the offset information is received, the write data is programmed based on the offset information such that at least one state among a plurality of states included in a distribution of threshold voltages of memory cells in which the write data is stored is changed.
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公开(公告)号：US20230127606A1
公开(公告)日：2023-04-27
申请号：US17837163
申请日：2022-06-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyeongmin NAM , Chanha Kim , Seungryong Jang
IPC: G06F12/02 , G06F12/109 , G06F12/123
Abstract: A storage device including: a memory device including memory blocks having different bit densities; and a controller, the controller including: a memory to store a logical address list including a number of recently received logical addresses and a hotness table including a hotness of each of the logical addresses in the list; and a processor to receive a write command, a latest logical address and data, to update a hotness of the latest logical address in the hotness table, to insert the latest logical address into the logical address list, and to control the memory device to program the data into one of the memory blocks depending on whether the hotness of the latest logical address exceeds a threshold value, the hotness of the latest logical address being updated based on how long ago a logical address the same as the latest logical address was received.
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Patent Agency Ranking
公开(公告)号：US20230036841A1
公开(公告)日：2023-02-02
申请号：US17586896
申请日：2022-01-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chanha Kim , Gyeongmin Nam , Seungryong Jang
IPC: G06F3/06
Abstract: Provided are a storage device, a storage controller, and an operating method of the storage controller. The storage device according to the inventive concept includes a non-volatile memory and a storage controller. The non-volatile memory includes a plurality of memory blocks, each memory block includes physical units having different retention strengths due to process variations, and the retention strengths respectively correspond to times that physical units retain data before respective reclaim operations for the physical units. The storage controller receives a write request and data from a host, selects a first physical unit based on hotness of data and retention strengths, and controls the non-volatile memory to write data to the first physical unit.
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公开(公告)号：US11322206B2
公开(公告)日：2022-05-03
申请号：US17036060
申请日：2020-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinwoo Hong , Chanha Kim , Kangho Roh , Seungkyung Ro , Yunjung Lee , Heewon Lee
Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.
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公开(公告)号：US10802728B2
公开(公告)日：2020-10-13
申请号：US16416750
申请日：2019-05-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwangwoo Lee , Chanha Kim , Yunjung Lee , Jisoo Kim , Seungkyung Ro , Jinwook Lee , Heewon Lee
Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.
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公开(公告)号：US20230131466A1
公开(公告)日：2023-04-27
申请号：US17808773
申请日：2022-06-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gyeongmin Nam , Chanha Kim , Seungryong Jang
IPC: G06F3/06
Abstract: A storage device includes a memory device including a first memory region, a second memory region, and a third memory region, the first memory region having a lowest bit-density relative to the second memory region and the third memory region, a second memory region having a medium bit-density relative to the first memory region and the third memory region, and a third memory region having a highest bit-density relative to the first memory region and the second memory region; and a controller configured to control the memory device The controller is configured to distribute data received from a host to the first to third memory regions based on attributes of the data, to determine a current state based on a data distribution amount for each of the first to third memory regions and a respective size of each of the first to third memory regions, and to perform an action of increasing or decreasing a size of the second memory region under the current state based on a reinforcement learning result for mitigating a reduction in lifespan of the third memory region.
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公开(公告)号：US20210166764A1
公开(公告)日：2021-06-03
申请号：US17036060
申请日：2020-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinwoo Hong , Chanha Kim , Kangho Roh , Seungkyung Ro , Yunjung Lee , Heewon Lee
Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.
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