中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.03 seconds)

    Notebook computer
    11.
    外观设计
    Notebook computer 有权

    公开(公告)号：USD1035643S1

    公开(公告)日：2024-07-16

    申请号：US29730115

    申请日：2020-04-01

    Applicant: Samsung Electronics Co., Ltd.

    Designer： Dongseok Lee ,  Junghyun Park ,  Iksang Kim

    Abstract: FIG. 1 is a top perspective view of a notebook computer showing our new design;
    FIG. 2 is a front elevation view thereof;
    FIG. 3 is a rear elevation view thereof;
    FIG. 4 is a left side elevation view thereof;
    FIG. 5 is a right side elevation view thereof;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a bottom plan view thereof;
    FIG. 8 is a bottom perspective view thereof;
    FIG. 9 is an enlarged view of the portion 9 delineated in FIG. 1;
    FIG. 10 is an enlarged view of the portion 10 delineated in FIG. 2;
    FIG. 11 is an enlarged view of the potion 11 delineated in FIG. 3;
    FIG. 12 is an enlarged view of the potion 12 delineated in FIG. 4;
    FIG. 13 is an enlarged view of the potion 13 delineated in FIG. 6;
    FIG. 14 is an enlarged view of the potion 14 delineated in FIG. 7; and,
    FIG. 15 is an enlarged view of the potion 15 delineated in FIG. 8.
    The evenly-dashed broken lines in the drawings illustrate portions of the notebook computer that form no part of the claimed design. The dot-dash broken lines delineating portions of the claimed design that are shown in enlargements form no part of the claimed design.

    SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND SEPARATION STRUCTURE
    12.
    发明公开
    SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND SEPARATION STRUCTURE 审中-公开

    公开(公告)号：US20230395674A1

    公开(公告)日：2023-12-07

    申请号：US18236823

    申请日：2023-08-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongho Jeon ,  Sekoo Kang ,  Keunhee Bai ,  Dongseok Lee

    IPC: H01L29/423 ,  H01L29/40

    CPC classification number: H01L29/4236 ,  H01L29/42364 ,  H01L29/401

    Abstract: A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

    SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND SEPARATION STRUCTURE
    14.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND SEPARATION STRUCTURE 审中-公开

    公开(公告)号：US20200381526A1

    公开(公告)日：2020-12-03

    申请号：US16820302

    申请日：2020-03-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongho Jeon ,  Sekoo Kang ,  Keunhee Bai ,  Dongseok Lee

    IPC: H01L29/423 ,  H01L29/40

    Abstract: A semiconductor device including a gate structure and a separation structure is provided. The semiconductor device includes: first and second active regions; an insulating layer between the first and second active regions; a first gate structure on the first active region and the insulating layer, the first gate structure having a first end portion on the insulating layer; a second gate structure on the second active region and the insulating layer, the second gate structure having a second end portion facing the first end portion in a first direction, the second gate structure on the insulating layer; and a separation structure between the first end portion and the second end portion and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

    Semiconductor device including gate structure and separation structure
    16.
    发明授权
    Semiconductor device including gate structure and separation structure 有权

    公开(公告)号：US12113112B2

    公开(公告)日：2024-10-08

    申请号：US18236823

    申请日：2023-08-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongho Jeon ,  Sekoo Kang ,  Keunhee Bai ,  Dongseok Lee

    IPC: H01L29/423 ,  H01L29/40

    CPC classification number: H01L29/4236 ,  H01L29/401 ,  H01L29/42364

    Abstract: A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

    SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND SEPARATION STRUCTURE
    17.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND SEPARATION STRUCTURE 有权

    公开(公告)号：US20220102516A1

    公开(公告)日：2022-03-31

    申请号：US17548826

    申请日：2021-12-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongho Jeon ,  Sekoo Kang ,  Keunhee Bai ,  Dongseok Lee

    IPC: H01L29/423 ,  H01L29/40

    Abstract: A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

Patent Agency Ranking