公开(公告)号：US20220149043A1

公开(公告)日：2022-05-12

申请号：US17582357

申请日：2022-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heonjong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

公开(公告)号：US20200075595A1

公开(公告)日：2020-03-05

申请号：US16391757

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heonjong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

公开(公告)号：US20230223451A1

公开(公告)日：2023-07-13

申请号：US18073682

申请日：2022-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Seonbae KIM ,  Jinyoung PARK ,  Hyunho PARK ,  Jimin YU ,  Jaeran JANG

IPC: H01L29/417 ,  H01L23/528 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L23/5286 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/401 ,  H01L29/66439

Abstract: A semiconductor device includes an active region extending in a first direction; a device isolation layer on side surfaces of the active region and defining the active region; a gate structure intersecting the active region on the active region and extending in a second direction; source/drain regions in regions in which the active region is recessed, on both sides of the gate structure; first protective layers between the device isolation layer and the gate structure; and a buried interconnection line below the source/drain regions and connected to one of the source/drain regions through an upper surface of the buried interconnection line.

公开(公告)号：US20220399449A1

公开(公告)日：2022-12-15

申请号：US17679361

申请日：2022-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Minchan GWAK

IPC: H01L29/417 ,  H01L29/78 ,  H01L23/522 ,  H01L29/06

Abstract: A semiconductor device includes an active region on a substrate, gate structures intersecting the active region on the substrate, source/drain regions on both sides of the gate structures, a contact structure in a contact hole exposing the source/drain regions, the contact structure comprising a barrier layer and a plug layer, and an insulating pattern in a remaining space of the contact hole, wherein the contact structure includes a first portion filling a lower portion of the contact hole and a second portion protruding from a region of the first portion, the plug layer extends continuously from the first portion to the second portion, and the barrier layer of the second portion has upper ends at a level lower than an upper surface of the plug layer of the second portion on both sides of the plug layer of the second portion.

公开(公告)号：US20220384591A1

公开(公告)日：2022-12-01

申请号：US17546213

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Seon-Bae KIM ,  Minchan GWAK ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, a first lower interconnection line on the gate electrode, and a second lower interconnection line on the active contact and at the same level as the first lower interconnection line. The gate electrode may include an electrode body portion and an electrode protruding portion, wherein the electrode protruding portion protrudes from a top surface of the electrode body portion and is in contact with the first lower interconnection line thereon. The active contact may include a contact body portion and a contact protruding portion, wherein the contact protruding portion protrudes from a top surface of the contact body portion and is in contact with the second lower interconnection line thereon.

公开(公告)号：US20190157406A1

公开(公告)日：2019-05-23

申请号：US16014496

申请日：2018-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inchan HWANG ,  Heonjong SHIN ,  Sunghun JUNG ,  Doohyun LEE ,  Hwichan JUN ,  Hakyoon AHN

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L27/092 ,  H01L21/285 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device is disclosed. The semiconductor device may include a substrate including a first active pattern, the first active pattern vertically protruding from a top surface of the substrate, a first source/drain pattern filling a first recess, which is formed in an upper portion of the first active pattern, a first metal silicide layer on the first source/drain pattern, the first metal silicide layer including a first portion and a second portion, which are located on a first surface of the first source/drain pattern, and a first contact in contact with the second portion of the first metal silicide layer. A thickness of the first portion may be different from a thickness of the second portion.