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公开(公告)号:US20230073206A1
公开(公告)日:2023-03-09
申请号:US18048949
申请日:2022-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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公开(公告)号:US20220012871A1
公开(公告)日:2022-01-13
申请号:US17189893
申请日:2021-03-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Minho Kim , Hakseung Han , Jiyoung Kim , Jinback Park
Abstract: An apparatus and method of measuring pattern uniformity, and a method of manufacturing a mask by using the measurement method are provided. The measurement apparatus includes a light source configured to generate and output light, a stage configured to support a measurement target, an optical system configured to transfer the light, output from the light source, to the measurement target supported on the stage, and a first detector configured to detect light reflected and diffracted by the measurement target, or diffracted by passing through the measurement target, wherein the first detector is configured to detect a pupil image of a pupil plane and to measure pattern uniformity of an array area of the measurement target on the basis of intensity of at least one of zero-order light and 1st-order light of the pupil image.
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公开(公告)号:US20210223680A1
公开(公告)日:2021-07-22
申请号:US16911601
申请日:2020-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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公开(公告)号:US20210033959A1
公开(公告)日:2021-02-04
申请号:US15931709
申请日:2020-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
Abstract: Disclosed are photomask manufacturing methods and semiconductor device fabrication methods. The photomask manufacturing method includes forming a reflective layer on a mask substrate having an image region and an edge region surrounding the image region, forming an absorption pattern on the reflective layer, forming a black border by irradiating a first laser beam to the reflective layer and the absorption pattern on the edge region, using a photomask having the black border to provide a test substrate with an extreme ultraviolet (EUV) beam to form a test pattern, obtaining a critical dimension correction map of the test pattern, and using the critical dimension correction map to irradiate a second laser beam to the reflective layer on a portion of the image region to form an annealed region that is thicker than the black border.
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