公开(公告)号：US11935908B2

公开(公告)日：2024-03-19

申请号：US17327885

申请日：2021-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mihye Jang ,  Seungjoo Nah ,  Minho Jang ,  Heegeun Jeong

IPC: H01L27/146 ,  H01L21/768 ,  H01L23/00 ,  H10K39/32

CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L24/83 ,  H01L27/14634 ,  H01L27/1469 ,  H10K39/32 ,  H01L24/06 ,  H01L24/32 ,  H01L2224/06155 ,  H01L2224/32145 ,  H01L2224/83931 ,  H01L2224/83951

Abstract: An image sensor includes a first structure including a first substrate, and a first internal wiring structure on the first substrate. The first substrate includes an active pixel region and a through electrode region around the active pixel region. The first internal wiring structure includes a plurality of first internal wiring patterns. The image sensor further includes a second structure including a second substrate and a second internal wiring structure on the second substrate. The second substrate is arranged on the first substrate. The image sensor additionally includes a through electrode layer arranged in the through electrode region to at least partially fill a through electrode trench, which penetrates the first substrate, and to connect the first internal wiring structure to the second internal wiring structure.

公开(公告)号：US11031428B2

公开(公告)日：2021-06-08

申请号：US16917309

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonchul Choi ,  Min Jang ,  Yitae Kim ,  Heegeun Jeong

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.

公开(公告)号：US10186541B2

公开(公告)日：2019-01-22

申请号：US15224095

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Hyun Kim ,  Kyeongjae Byeon ,  Chungho Song ,  Heegeun Jeong

IPC: H01L27/146

Abstract: A semiconductor device includes a pad disposed on a semiconductor layer, an insulating layer disposed between the semiconductor layer and the pad, a through-via penetrating the semiconductor layer and the insulating layer so as to be connected to the pad, and an isolation layer penetrating the semiconductor layer and surrounding the pad when viewed from a plan view.

公开(公告)号：US20140252420A1

公开(公告)日：2014-09-11

申请号：US14138434

申请日：2013-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shinwook Yi ,  Hyoungsoo Ko ,  Kyungho Lee ,  Youngwoo Jung ,  Heegeun Jeong

IPC: H01L27/148

CPC classification number: H01L27/14605 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor device can include device isolation regions in a substrate and a photoelectric conversion portion in the substrate that can be between the device isolation regions. A transfer gate of the image sensor device, can be located over, and be electrically coupled to, the photoelectric conversion portion. The transfer gate can include at least two protrusions, that are separated from the device isolation regions, and that protrude toward the photoelectric conversion portion.

Abstract translation: 图像传感器装置可以包括衬底中的器件隔离区域和衬底中可位于器件隔离区域之间的光电转换部分。 图像传感器装置的传输门可以位于光电转换部分的上方并与之电耦合。 传输门可以包括与器件隔离区分离的至少两个突起，并且朝向光电转换部分突出。

公开(公告)号：US12243892B2

公开(公告)日：2025-03-04

申请号：US17570884

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon Kim ,  Jinju Jeon ,  Heegeun Jeong

IPC: H01L27/146 ,  H04N25/633

Abstract: An image sensor including: a semiconductor substrate having a first surface and a second surface; a pixel device isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the pixel device isolation film defines pixels in the semiconductor substrate, and includes a conductive layer; and a device isolation structure located inside a device isolation trench that extends from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the device isolation structure includes a conductive liner electrically connected to the conductive layer, wherein a negative bias is applied to the conductive layer and the conductive liner.

公开(公告)号：US20240290808A1

公开(公告)日：2024-08-29

申请号：US18517562

申请日：2023-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonhyeok Kim ,  Seungjoo Nah ,  Heegeun Jeong

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14641

Abstract: An image sensor is provided, and the image sensor includes: a substrate having first and second surfaces spaced apart from each other in a vertical direction; a first color unit pixel including a first subpixel to a fourth subpixel arranged in a 2×2 matrix; a second color unit pixel including four subpixels arranged in a 2×2 matrix; a first pixel isolation trench separating the first color unit pixel and the second color unit pixel; a second pixel isolation trench separating the first subpixel and the second subpixel of the first color unit pixel; a third pixel isolation trench on a point of intersection of the first to fourth subpixels of the first color unit pixel. The first color unit pixel detects first color light. The second color unit pixel detects second color light. The image sensor is configured to receive the first color light on the second surface. The second pixel isolation trench extends from the first surface to the second surface. The third pixel isolation trench extends from the second surface to the first surface.

公开(公告)号：US11848342B2

公开(公告)日：2023-12-19

申请号：US17218662

申请日：2021-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunyoung Bang ,  Seungjoo Nah ,  Hoemin Jeong ,  Heegeun Jeong

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627

Abstract: An image sensor includes: a substrate having a first surface and a second surface that are opposite to each other; a plurality of color filters on the substrate; a fence pattern between adjacent color filters of the plurality of color filters; and a protective layer between the substrate and the plurality of color filters, wherein the protective layer covers the fence pattern. The fence pattern includes: a first fence pattern having a first bottom surface and a first top surface that are opposite to each other; and a second fence pattern on the first top surface of the first fence pattern. A width at the first bottom surface of the first fence pattern is less than a width of the second fence pattern, and the protective layer covers a sidewall of the first fence pattern.

公开(公告)号：US11670661B2

公开(公告)日：2023-06-06

申请号：US16934278

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinyoung Kim ,  Euiyeol Kim ,  Hyounmin Baek ,  Jeong-Ho Lee ,  Youngwoo Chung ,  Heegeun Jeong

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689

Abstract: An image sensor includes; a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions, a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer, and a first contact provided on the second surface and connected to the semiconductor pattern. A height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.

公开(公告)号：US20230123890A1

公开(公告)日：2023-04-20

申请号：US17807026

申请日：2022-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon KIM ,  Heegeun Jeong ,  Taekhwan Hyun

IPC: H01L27/146

Abstract: An image sensor includes: a pixel array including a plurality of photodiodes arranged on an upper surface of a substrate, pixel isolation layers extending from the upper surface to a lower surface of the substrate and disposed between the plurality of photodiodes, and pixel circuits. The pixel array includes pixel groups respectively including two or more of the photodiodes, at least one color filter, and at least one microlens. The at least one color filter included in each of the pixel groups has one color, and the pixel isolation layers includes a first pixel isolation layer disposed between the pixel groups and containing silicon oxide and polysilicon; and a second pixel isolation layer containing silicon oxide and extending in a first direction and a second direction, which intersect each other between the two or more photodiodes in each of the pixel groups.