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    SEMICONDUCTOR DEVICE
    13.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250098291A1

    公开(公告)日：2025-03-20

    申请号：US18962141

    申请日：2024-11-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ho-Jun KIM ,  Hyungjin PARK

    IPC: H01L27/088 ,  H01L21/8234

    Abstract: A semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    14.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20240387527A1

    公开(公告)日：2024-11-21

    申请号：US18786756

    申请日：2024-07-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ho-Jun KIM ,  Beomjin PARK ,  Dong Il BAE ,  Mirco CANTORO

    IPC: H01L27/088 ,  H01L29/417 ,  H01L29/423

    Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a plurality of gate structures that are spaced apart from each other in a first direction on a substrate and extend in a second direction intersecting the first direction, and a plurality of separation patterns penetrating immediately neighboring ones of the plurality of gate structures, respectively. Each of the plurality of separation patterns separates a corresponding one of the neighboring gate structures into a pair of gate structures that are spaced apart from each other in the second direction. The plurality of separation patterns are spaced apart from and aligned with each other along the first direction.

    SEMICONDUCTOR DEVICE
    15.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230282703A1

    公开(公告)日：2023-09-07

    申请号：US17894269

    申请日：2022-08-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ho-Jun KIM ,  Jin Beom Park ,  Kwan Young Chun

    IPC: H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/775

    CPC classification number: H01L29/0673 ,  H01L29/41733 ,  H01L29/78696 ,  H01L29/775

    Abstract: A semiconductor device is provided. The semiconductor device includes a lower substrate; a lower active pattern which extends in a first direction on the lower substrate; a first lower gate electrode which extends in a second direction on the lower active pattern; an upper substrate on the first lower gate electrode; an upper active pattern which extends in the first direction on the upper substrate, wherein the upper active pattern is spaced apart from the lower active pattern in each of the second direction and a vertical direction; a first upper gate electrode which extends in the second horizontal direction on the upper active pattern, wherein the first upper gate electrode at least partially overlaps the first lower gate electrode in the vertical direction; and a first gate contact which is spaced apart from the first upper gate electrode in the second horizontal direction.

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