公开(公告)号：US09087776B2

公开(公告)日：2015-07-21

申请号：US13945613

申请日：2013-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hoon Lee

IPC: H01L29/267 ,  H01L29/26 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L21/02

CPC classification number: H01L29/267 ,  H01L21/0237 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02529 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/26 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

Abstract: In a nitride-based semiconductor device, an undoped gallium nitride (GaN) layer is formed on an aluminum gallium nitride (AlGaN) layer, and a silicon carbon nitride (SixC1-xN) functional layer is formed on the undoped GaN layer.

Abstract translation: 在氮化物类半导体器件中，在氮化铝镓（AlGaN）层上形成未掺杂的氮化镓（GaN）层，在未掺杂的GaN层上形成氮化硅（SixC1-xN）功能层。

公开(公告)号：US09087768B2

公开(公告)日：2015-07-21

申请号：US13759923

申请日：2013-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hoon Lee ,  Jae Hyun Jeong

IPC: H01L29/66 ,  H01L29/205 ,  H01L29/872 ,  H01L29/201 ,  H01L29/20

CPC classification number: H01L29/205 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/872

Abstract: A nitride based heterojunction semiconductor device includes a gallium nitride (GaN) layer disposed on a substrate, an aluminum (Al)-doped GaN layer disposed on the GaN layer, a Schottky electrode disposed in a first area on the Al-doped GaN layer, an AlGaN layer disposed in a second area on the Al-doped GaN layer, and an ohmic electrode disposed on the AlGaN layer. The first area is different from the second area.

Abstract translation: 氮化物基异质结半导体器件包括设置在衬底上的氮化镓（GaN）层，设置在GaN层上的铝（Al）掺杂的GaN层，设置在Al掺杂GaN层上的第一区域中的肖特基电极， 设置在Al掺杂GaN层上的第二区域中的AlGaN层和设置在AlGaN层上的欧姆电极。 第一个区域与第二个区域不同。

公开(公告)号：US12191881B2

公开(公告)日：2025-01-07

申请号：US18150636

申请日：2023-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon Lee ,  Yong Lim

IPC: H03M1/82 ,  H03M1/18 ,  H03M1/46

Abstract: An analog-to-digital converter (ADC) includes a first comparator configured to generate a first comparison signal on a basis of a first asynchronous clock signal generated from a sampling clock signal, and a second comparator configured to generate a second comparison signal on a basis of a second asynchronous clock signal generated by a first comparison operation completion signal. The ADC includes a first control logic configured to output a first control signal on a basis of the first comparison signal and a second control logic configured to output a second control signal on a basis of the second comparison signal. The ADC includes a first reference signal adjusting circuit configured to adjust a first reference signal on a basis of the first control signal and a second reference signal adjusting circuit configured to adjust a second reference signal on a basis of the second control signal.

公开(公告)号：US09136365B2

公开(公告)日：2015-09-15

申请号：US13716640

申请日：2012-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon Lee ,  Ki Se Kim

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/267 ,  H01L29/872 ,  H01L29/06 ,  H01L29/45 ,  H01L29/47 ,  H01L29/20

CPC classification number: H01L29/78 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66477 ,  H01L29/872

Abstract: A power device includes a substrate, a silicon carbide (SixC1-x) layer on one surface of the substrate, wherein 0

Abstract translation: 功率器件包括衬底，在衬底的一个表面上的碳化硅（SixC1-x）层，其中0

公开(公告)号：US08815666B2

公开(公告)日：2014-08-26

申请号：US14036071

申请日：2013-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon Lee

IPC: H01L21/338 ,  H01L29/10 ,  H01L29/778 ,  H01L29/06 ,  H01L29/66 ,  H01L29/20

CPC classification number: H01L29/0615 ,  H01L29/1058 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified.

Abstract translation: 提供电力设备。 功率器件可以包括对应于栅电极图案的部分中的二维电子气（2-DEG）层，因为在形成第一氮化物层之后在栅电极图案的下部还形成第二氮化物层 因此，能够进行常关动作。 因此，功率器件可以基于栅极的电压来调整2-DEG层的产生，并且可以降低功耗。 功率器件可以只再生对应于栅极电极图案的部分，或者可以蚀刻除了与栅电极图案对应的部分之外的部分，因此凹陷处理可以是不允许的，可以确保功率器件的再现性，并且 制造过程可以被简化。