公开(公告)号：US10714686B2

公开(公告)日：2020-07-14

申请号：US15869892

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungwon Kim ,  Sung-Ho Eun ,  Ilmok Park ,  Junghoon Park ,  Seulji Song ,  Ji-Hyun Jeong

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: Variable resistance memory devices and methods of forming the same are provided. The variable resistance memory devices may include a substrate including a cell region and a peripheral region, first conductive lines on the substrate, second conductive lines traversing the first conductive lines, variable resistance structures at intersecting points of the first conductive lines and the second conductive lines, and bottom electrodes between the first conductive lines and the variable resistance structures. The cell region may include a boundary region contacting the peripheral region, and one of the first conductive lines is electrically insulated from one of the variable resistance structures that is on the boundary region and overlaps the one of the first conductive lines.

公开(公告)号：US10056431B2

公开(公告)日：2018-08-21

申请号：US15700154

申请日：2017-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ilmok Park ,  Sungwon Kim ,  Seulji Song ,  Ji-Hyun Jeong

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1683

Abstract: A variable resistance memory device may include a word line extending in a first direction, a bit line extending in a second direction crossing the first direction, a phase-changeable pattern provided between the word line and the bit line, a bottom electrode provided between the phase-changeable pattern and the word line, and a spacer provided on a side surface of the bottom electrode and between the phase-changeable pattern and the word line. The bottom electrode may include a first portion and a second portion, and the second portion is provided between the first portion and the spacer. The first and second portions of the bottom electrodes may have different lengths from each other in the second direction.