公开(公告)号：US20230170025A1

公开(公告)日：2023-06-01

申请号：US18153007

申请日：2023-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Sang LEE

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/24 ,  G11C16/04 ,  G11C16/26 ,  G11C16/32 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/08 ,  G11C16/24 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/32 ,  G11C16/3459 ,  G11C7/22

Abstract: A non-volatile memory device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to selectively control the plurality of word lines, a page buffer including a plurality of latches corresponding to the plurality of bit lines, respectively, and a control circuit configured to control the non-volatile memory device to enter a suspend state after terminating a verify operation of a program loop of a program operation of the plurality of memory cells in response to a suspend request being generated during an execution operation of the program loop.

公开(公告)号：US20180151237A1

公开(公告)日：2018-05-31

申请号：US15825786

申请日：2017-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Sang LEE ,  Ji-Ho CHO ,  Byung-Soo KIM ,  Dong-Jin SHIN

IPC: G11C16/34 ,  G11C11/56 ,  G11C16/14

CPC classification number: G11C16/3459 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16 ,  G11C16/3445 ,  G11C2211/5621

Abstract: An operation method of a nonvolatile memory device for programming memory cells connected to a selected word line, the method including: performing a program operation; suspending the program operation after performing a first portion of the program operation; and resuming the program operation to perform a second portion of the program operation, wherein the program operation is resumed within a reference time after the program operation is suspended.