公开(公告)号：US20200058359A1

公开(公告)日：2020-02-20

申请号：US16356182

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunjung Lee ,  Chanha Kim ,  Suk-eun Kang ,  Seungkyung Ro ,  Kwangwoo Lee ,  Juwon Lee ,  Jinwook Lee ,  Heewon Lee

IPC: G11C16/26 ,  G11C16/34 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52

Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

公开(公告)号：US20240126647A1

公开(公告)日：2024-04-18

申请号：US18204132

申请日：2023-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghan Lee ,  Heon Jekal ,  Hyunjoon Yoo ,  Heeseok Eun ,  Jinwook Lee

IPC: G06F11/10 ,  G06F11/14

CPC classification number: G06F11/1076 ,  G06F11/1435

Abstract: A storage system includes: an interconnector; a plurality of storage devices connected to the interconnector and configured to store data; a host device connected to the interconnector, and configured to: set a plurality of erasure coding schemes that are different from each other, and determine a target erasure coding scheme corresponding to original data to be stored in the plurality of storage devices among the plurality of erasure coding schemes, based on device characteristics of the plurality of storage devices or data characteristics of the original data; and an erasure coding controller configured to: divide the original data into a plurality of data blocks corresponding to the target erasure coding scheme, and generate one or more parity blocks corresponding to the target erasure coding scheme, by encoding the plurality of data blocks.

公开(公告)号：US10593596B2

公开(公告)日：2020-03-17

申请号：US15959319

申请日：2018-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongwoo Han ,  Kwang-Yong Yang ,  Jinwook Lee ,  Kyungyub Jeon ,  Haegeon Jung ,  Dohyoung Kim

IPC: H01L21/336 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L21/306

Abstract: A method of fabricating a semiconductor device includes forming first and second active patterns on first and second regions, respectively, of a substrate, forming first and second gate structures on the first and second active patterns, respectively, forming a coating layer to cover the first and second gate structures and the first and second active patterns, and forming a first recess region in the first active pattern between the first gate structures and a second recess region in the second active pattern between the second gate structures.

公开(公告)号：US09984931B2

公开(公告)日：2018-05-29

申请号：US15260952

申请日：2016-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongwoo Han ,  Kwang-Yong Yang ,  Jinwook Lee ,  Kyungyub Jeon ,  Haegeon Jung ,  Dohyoung Kim

IPC: H01L21/336 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L21/306

CPC classification number: H01L21/823431 ,  H01L21/30604 ,  H01L21/823437 ,  H01L27/0886 ,  H01L29/6656 ,  H01L29/66795

Abstract: A method of fabricating a semiconductor device includes forming first and second active patterns on first and second regions, respectively, of a substrate, forming first and second gate structures on the first and second active patterns, respectively, forming a coating layer to cover the first and second gate structures and the first and second active patterns, and forming a first recess region in the first active pattern between the first gate structures and a second recess region in the second active pattern between the second gate structures.

公开(公告)号：US12282664B2

公开(公告)日：2025-04-22

申请号：US18314978

申请日：2023-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heeseok Eun ,  Jinwook Lee ,  Bongsoon Lim

IPC: G06F3/06

Abstract: A method is provided to operate a storage device including a storage controller and a plurality of nonvolatile memory devices. A plurality of original data blocks are received at the storage controller from a host. An original parity block is generated based on the original data blocks. The original data blocks and the original parity block are stored in respective ones of the nonvolatile memory devices, wherein a first original data block of the original data blocks is stored in a first one of the nonvolatile memory devices, and wherein the original parity block is stored in a second one of the nonvolatile memory devices. A new data block corresponding to the first original data block is received at the storage controller from the host after storing the original data blocks and the original parity block. The new data block is stored in the first nonvolatile memory device. A new parity block is generated at the second nonvolatile memory device based on the original parity block and based on differences between the first original data block and the new data block.

公开(公告)号：US12271611B2

公开(公告)日：2025-04-08

申请号：US17879967

申请日：2022-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongouk Moon ,  Sanghwa Jin ,  Jinwook Lee

IPC: G06F3/06

Abstract: In a method of operating a storage device including a nonvolatile memory device, an abnormal area may be detected as an optional area in the nonvolatile memory device, and optional data optional data may be stored in the optional area. The abnormal area may be a portion of the nonvolatile memory device having an access time exceeding a reference latency.

公开(公告)号：US12248709B2

公开(公告)日：2025-03-11

申请号：US18200215

申请日：2023-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwook Lee ,  Heeseok Eun

IPC: G06F3/06

Abstract: A method of operating a storage server which includes a plurality of storage devices and a storage node configured to control the plurality of storage devices is provided. The method includes grouping first virtual machines based on workload characteristics of the first virtual machines, to generate a virtual machine group table; receiving, from first storage devices, attribute information of the first storage devices, the first storage devices being allocated to the first virtual machines; collecting recovery information from the first storage devices; generating a recovery sequence table by determining recovery sequences based on the virtual machine group table, the attribute information, and the recovery information; and providing a corresponding recovery sequence to a second storage device of the plurality of storage devices, based on the recovery sequence table, the second storage device being allocated to a new second virtual machine different from the first virtual machines.

公开(公告)号：US12068242B2

公开(公告)日：2024-08-20

申请号：US17373900

申请日：2021-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsik Shin ,  Dong Kwon Kim ,  Jinwook Lee ,  Jongchul Park ,  Wonhyuk Lee

IPC: H01L23/522 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L23/5226 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76897 ,  H01L29/6656 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device including a gate pattern on a substrate and including a gate dielectric layer, a gate electrode, and a gate capping pattern that are sequentially stacked; a gate spacer on a sidewall of the gate pattern; a source/drain pattern in the substrate; a contact pad on the source/drain pattern, a source/drain contact on the contact pad; and a buried dielectric pattern between the gate spacer and the source/drain contact, wherein the gate spacer includes a first segment between the gate electrode and the source/drain pattern; a second segment that extends from the first segment and between the gate electrode and the source/drain contact; and a third segment on the second segment, the buried dielectric pattern is between the third segment and the source/drain contact, and is absent between the first segment and the contact pad and is absent between the second segment and the source/drain contact.

公开(公告)号：US20240220150A1

公开(公告)日：2024-07-04

申请号：US18341164

申请日：2023-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heeseok Eun ,  Seunghan Lee ,  Jinwook Lee ,  Soo-Young Ji

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: In a storage system, a first computational storage device may be configured to store first data used to execute a program, and a second computational storage device may be configured to store second data used to execute the program. The second computational storage device may be configured to receive the program offloaded from the host device, bring the first data from the first computational storage device, and execute the program using a plurality of data including the first data and the second data.

公开(公告)号：US20240069751A1

公开(公告)日：2024-02-29

申请号：US18314978

申请日：2023-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heeseok Eun ,  Jinwook Lee ,  Bongsoon Lim

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/064 ,  G06F3/0679

Abstract: A method is provided to operate a storage device including a storage controller and a plurality of nonvolatile memory devices. A plurality of original data blocks are received at the storage controller from a host. An original parity block is generated based on the original data blocks. The original data blocks and the original parity block are stored in respective ones of the nonvolatile memory devices, wherein a first original data block of the original data blocks is stored in a first one of the nonvolatile memory devices, and wherein the original parity block is stored in a second one of the nonvolatile memory devices. A new data block corresponding to the first original data block is received at the storage controller from the host after storing the original data blocks and the original parity block. The new data block is stored in the first nonvolatile memory device. A new parity block is generated at the second nonvolatile memory device based on the original parity block and based on differences between the first original data block and the new data block.