公开(公告)号：US11556768B2

公开(公告)日：2023-01-17

申请号：US16849638

申请日：2020-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryan Hatcher ,  Titash Rakshit ,  Jorge Kittl ,  Dharmendar Palle ,  Joon Goo Hong

IPC: G06N3/063 ,  G06N3/02

Abstract: A method and system are provided. The method includes mapping a binary matrix to an undirected graph form, applying a two-way graph partition algorithm to the mapped binary matrix that minimizes edge cuts between partitions in the mapped binary matrix, applying a greedy algorithm recursively to find a set of row or column permutations that maximizes a transfer of non-zeros from sparse blocks to nonsparse blocks, and sparsifying or densifying the binary matrix according to the applied greedy algorithm.

公开(公告)号：US11182686B2

公开(公告)日：2021-11-23

申请号：US16448842

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryan M. Hatcher ,  Titash Rakshit ,  Jorge Kittl ,  Rwik Sengupta ,  Dharmendar Palle ,  Joon Goo Hong

IPC: G11C11/16 ,  G11C13/00 ,  G11C11/22 ,  G06N5/04 ,  G06F17/16

Abstract: A weight cell and device are herein disclosed. The weight cell includes a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET, a second FET and a second resistive memory element connected to a drain of the second FET, the drain of the first FET being connected to a gate of the second FET and the drain of the second FET is connected to a gate of the first FET, a third FET and a third resistive memory element connected to a drain of the third FET, and a fourth FET and a fourth resistive memory element connected to a drain of the fourth FET, the drain of the third FET is connected to a gate of the fourth FET and the drain of the fourth FET being connected to a gate of the third FET.