公开(公告)号：US20150079769A1

公开(公告)日：2015-03-19

申请号：US14559585

申请日：2014-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-youn KIM ,  Joo-sung KIM ,  Young-jo TAK

IPC: H01L21/02 ,  H01L23/00 ,  H01L21/033 ,  H01L21/768

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0332 ,  H01L21/76802 ,  H01L23/562 ,  H01L29/15 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/872 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first coalescent layer, a second coalescent layer, a nitride stacked structure on the second coalescent layer, and a third layer between the first and second coalescent layers. The first coalescent layer includes a plurality of formations that are partially merged, and the third layer is disposed on the formations to allow a first type of stress to be generated in an area which includes the first coalescent layer and a second type of stress to be generated in an area which includes the second coalescent layer.

Abstract translation: 半导体器件包括第一聚结层，第二聚结层，第二聚结层上的氮化物层叠结构以及第一和第二聚结层之间的第三层。 第一聚结层包括部分合并的多个构造，并且第三层设置在地层上，以允许在包括第一聚结层和第二类型应力的区域中产生第一类型的应力 在包括第二聚结层的区域中产生。

公开(公告)号：US20140061663A1

公开(公告)日：2014-03-06

申请号：US13837460

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jun-youn KIM ,  Joo-sung KIM ,  Moon-seung YANG

IPC: H01L29/20 ,  H01L21/02

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/267

Abstract: A semiconductor structure including a first nitride semiconductor layer, a second nitride semiconductor layer, and a third layer between the first nitride semiconductor layer and the second nitride semiconductor layer. The first nitride semiconductor layer has a first gallium composition ratio, the second nitride semiconductor layer has a second gallium composition ratio different from the first metal composition ratio, and the third layer has a third gallium composition ratio greater than at least one of the first gallium composition ratio or the second gallium composition ratio. The structure may also include a fourth layer for reducing tensile stress or increasing compression stress experienced by at least the second nitride semiconductor layer.

Abstract translation: 一种在第一氮化物半导体层和第二氮化物半导体层之间包括第一氮化物半导体层，第二氮化物半导体层和第三层的半导体结构。 第一氮化物半导体层具有第一镓组成比，第二氮化物半导体层具有与第一金属组成比不同的第二镓组成比，并且第三层具有大于第一镓的至少一种的第三镓组成比 组成比或第二镓组成比。 该结构还可以包括用于降低至少第二氮化物半导体层所经历的拉伸应力或增加压缩应力的第四层。