公开(公告)号：US20140057381A1

公开(公告)日：2014-02-27

申请号：US14067185

申请日：2013-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung-su JEONG ,  Young-soo PARK ,  Su-hee CHAE ,  Bok-ki MIN ,  Jun-youn KIM ,  Hyun-gi HONG ,  Young-jo TAK ,  Jae-won LEE

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/0025 ,  H01L27/156 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

Abstract: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

Abstract translation: 示例性实施例涉及包括图案化发光单元的发光器件和制造发光器件的方法。 发光器件包括在半导体层的顶部上的第一电极和在半导体层的底部上的第二电极，其中半导体层是由多个堆叠形成的图案阵列。 多个堆叠之间的空间填充有绝缘层，并且第一电极在绝缘层上。

公开(公告)号：US20140042391A1

公开(公告)日：2014-02-13

申请号：US13839693

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-youn KIM ,  Joo-sung KIM ,  Young-jo TAK

IPC: H01L29/20 ,  H01L29/15

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0332 ,  H01L21/76802 ,  H01L23/562 ,  H01L29/15 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/872 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first coalescent layer, a second coalescent layer, a nitride stacked structure on the second coalescent layer, and a third layer between the first and second coalescent layers. The first coalescent layer includes a plurality of formations that are partially merged, and the third layer is disposed on the formations to allow a first type of stress to be generated in an area which includes the first coalescent layer and a second type of stress to be generated in an area which includes the second coalescent layer.

Abstract translation: 半导体器件包括第一聚结层，第二聚结层，第二聚结层上的氮化物层叠结构以及第一和第二聚结层之间的第三层。 第一聚结层包括部分合并的多个构造，并且第三层设置在地层上，以允许在包括第一聚结层和第二类型应力的区域中产生第一类型的应力 在包括第二聚结层的区域中产生。

公开(公告)号：US20130328054A1

公开(公告)日：2013-12-12

申请号：US13713415

申请日：2012-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-jo TAK ,  Jae-kyun KIM ,  Jun-youn KIM ,  Jae-won LEE ,  Hyo-ji CHOI

IPC: H01L29/267 ,  H01L21/02 ,  H01L29/20

CPC classification number: H01L29/267 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L29/16 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

Abstract: A gallium nitride based semiconductor device includes a silicon-based layer doped simultaneously with boron (B) and germanium (Ge) at a relatively high concentration, a buffer layer on the silicon-based layer, and a nitride stack on the buffer layer. A doping concentration of boron (B) and germanium (Ge) may be higher than 1×1019/cm3.

Abstract translation: 氮化镓基半导体器件包括以相对高的浓度与硼（B）和锗（Ge）同时掺杂的硅基层，硅基层上的缓冲层和缓冲层上的氮化物叠层。 硼（B）和锗（Ge）的掺杂浓度可高于1×1019 / cm3。

公开(公告)号：US20140014990A1

公开(公告)日：2014-01-16

申请号：US13835921

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-youn KIM ,  Jae-kyun KIM ,  Joo-sung KIM ,  Moon-seung YANG ,  Su-hee CHAE ,  Young-jo TAK ,  Hyun-gi HONG

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L25/0753 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/13 ,  H01L2933/0066

Abstract: Lights-emitting device (LED) packages, and methods of manufacturing the same, include at least one light-emitting structure. The at least one light-emitting structure includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer that are sequentially stacked, at least one first metal layer connected to the first compound semiconductor layer, a second metal layer connected to the second compound semiconductor layer, a substrate having a conductive bonding layer on a first surface of the substrate, and a bonding metal layer configured for eutectic bonding between the at least one first metal layer and the conductive bonding layer.

Abstract translation: 发光装置（LED）封装及其制造方法包括至少一个发光结构。 所述至少一个发光结构包括依次堆叠的第一化合物半导体层，有源层和第二化合物半导体层，连接到第一化合物半导体层的至少一个第一金属层，连接到第一化合物半导体层的第二金属层 所述第二化合物半导体层，在所述基板的第一表面上具有导电接合层的基板以及被配置为在所述至少一个第一金属层和所述导电接合层之间共晶接合的接合金属层。

公开(公告)号：US20140353677A1

公开(公告)日：2014-12-04

申请号：US14294823

申请日：2014-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-jo TAK ,  Jae-kyun KIM ,  Joo-sung KIM ,  Jun-youn KIM ,  Young-soo PARK ,  Eun-ha LEE

IPC: H01L21/02 ,  H01S5/323 ,  H01L33/12 ,  H01L33/32 ,  H01L29/205 ,  H01L23/00

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L33/007 ,  H01L33/12 ,  H01L33/325 ,  H01S5/0014 ,  H01S5/021 ,  H01S5/34333

Abstract: Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.

Abstract translation: 提供了一种低缺陷半导体器件及其制造方法。 该方法包括在硅衬底上形成缓冲层，在第一生长条件下在缓冲层上形成界面控制层，并在不同于第一生长条件的第二生长条件下，在界面控制层上形成氮化层。

公开(公告)号：US20140124818A1

公开(公告)日：2014-05-08

申请号：US13856716

申请日：2013-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-sik HWANG ,  Jun-youn KIM ,  Su-hee CHAE

IPC: H01L33/12

CPC classification number: H01L33/0079 ,  H01L33/12

Abstract: A light emitting device (LED) includes a stress control layer having a compressive stress on a substrate, a bonding layer on the stress control layer, a semiconductor layer on the bonding layer and including an active region for emitting light on the bonding layer, a first electrode on a lower surface of the substrate, and a second electrode on the semiconductor layer. The compressive stress of the stress control layer is between about 1 and about 20 GPa.

Abstract translation: 发光器件（LED）包括在基板上具有压应力的应力控制层，应力控制层上的接合层，接合层上的半导体层，并且包括用于在接合层上发光的有源区， 在基板的下表面上的第一电极和在半导体层上的第二电极。 应力控制层的压缩应力在约1和约20GPa之间。

公开(公告)号：US20140113437A1

公开(公告)日：2014-04-24

申请号：US14146233

申请日：2014-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-youn KIM ,  Su-hee CHAE ,  Hyun-gi HONG ,  Young-jo TAK

IPC: H01L21/02

CPC classification number: H01L21/02658 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/0079 ,  H01L33/12 ,  H01S5/005 ,  H01S5/0207 ,  H01S5/32341

Abstract: A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and a plurality of buffer layers formed according to a predetermined pattern and formed spaced apart from each other on the plurality of protrusions.

Abstract translation: 公开了一种基板结构及其制造方法。 基板结构可以包括在其一个表面上形成有多个突起的基板和根据预定图案形成并且在多个突起上彼此间隔开地形成的多个缓冲层。

公开(公告)号：US20130309794A1

公开(公告)日：2013-11-21

申请号：US13950845

申请日：2013-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-won LEE ,  Bok-Ki MIN ,  Jun-youn KIM ,  Young-jo TAK ,  Hyung-su JEONG

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L33/007 ,  H01L33/10 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0016

Abstract: A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be formed on the surfaces of the plurality of grooves or the mesa between each of the plurality of grooves. Therefore, light generated in the active layer may be reflected by the reflective layer, and extracted to an external location.

Abstract translation: 发光器件可以包括衬底，n型覆盖层，有源层和p型覆盖层。 可以在基板上形成具有多个凹槽和每个凹槽之间的台面的凹凸图案，并且可以在多个凹槽或多个凹槽中的每一个之间的台面的表面上形成反射层 的凹槽。 因此，有源层中产生的光可以被反射层反射，并被提取到外部位置。

公开(公告)号：US20180030617A1

公开(公告)日：2018-02-01

申请号：US15641746

申请日：2017-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sam-mook KANG ,  Jun-youn KIM ,  Young-jo TAK ,  Mi-hyun KIM ,  Young-soo PARK

IPC: C30B25/16 ,  C23C16/52 ,  C23C14/54 ,  C23C14/06 ,  C23C16/30 ,  C30B29/40 ,  C30B25/18 ,  C23C14/22

CPC classification number: C30B25/165 ,  C23C14/0617 ,  C23C14/221 ,  C23C14/54 ,  C23C16/01 ,  C23C16/0272 ,  C23C16/303 ,  C23C16/455 ,  C23C16/4585 ,  C23C16/52 ,  C30B25/12 ,  C30B25/14 ,  C30B25/183 ,  C30B29/406 ,  H01J37/00 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/7806

Abstract: An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.

公开(公告)号：US20150093848A1

公开(公告)日：2015-04-02

申请号：US14564928

申请日：2014-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-hee CHAE ,  Young-soo PARK ,  Bok-ki MIN ,  Jun-youn KIM ,  Hyun-gi HONG

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/12

CPC classification number: H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/382 ,  H01L33/405 ,  H01L2933/0016

Abstract: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.

Abstract translation: 示例性实施例涉及发光器件（LED）及其制造方法。 LED包括第一半导体层; 第二半导体层; 形成在所述第一和第二半导体层之间的有源层; 以及在所述第一半导体层上包括多层的发光图案层，所述发光图案包括用于从所述有源层产生的外部发射光的发射图案。